6. Absolute Maximum Ratings
Parameter
Supply Voltage(operating) Supply Current
©2009-2013 Innosen Technology Co., Ltd.
Symbol
VDD IDD
Value
5.5 70
Units
V μA
2/5
Symbol
VDD IDD IOUT VSAT TAW TSL
Test Conditions
Operating Average
Min
2.5
Typ
3 45 1.0
Max
5.5
Units
V μA mA
IOUT=1mA Operating Operating 20
0.4
V μS μS
600
8.
Magnetic Characteristics
24921
3 - 0.44 3.90 0.05 0.05 3.90 3 - 0.39 3.90
Active Area Depth:
3 1
0.84(Nom) 6 1
2.3. 0.1
1 2
2 1
3 4
3 1
6 1
0.5 14
Notes: 1). Controlling dimension: mm; 2). Leads must be free of flash and plating voids; 3). Do not bend leads within 1 mm of lead to package interface; 4). PINOUT: Pin 1 Pin 2 Pin 3 VDD GND Output
©2009-2013 Innosen Technology Co., Ltd. Rev3.0.0.130116
FAX: 022-59812096
5/5
Top View
3
Notes: 1). PINOUT:
249mm
1
1.70 2.10
1.60 2.65 1.70 2.95
Pin 1 VDD Pin 2 Output Pin 3 GND 2). All dimensions are in millimeters; Marking: 249-- Code of Device ( ES249 ); y -- last 1 digit of year ; mm -- Production Lot ;
2. Features
CMOS Hall IC Technology Unipolar Output Solid-State Reliability much better than reed switch Operation down to 2.5V CMOS inverter output (no pull-up resistance) High sensitivity for direct reed switch replacement applications
9.2 TO-92 Package Physical Characteristics
0.76 0.05 1.58 0.1
ES249
2.13 1.87 3 1 45 1 1.00 1.20
4.1 0.1 3.90
1 2
2 1
3 4
Sensor Location
3.18 0.1
3
0.95 0.80 3.00 2 3 1 2 1.50 1.40
0.36 0.46
©2009-2013 Innosen Technology Co., Ltd.
Rev3.0.0.130116
4/5
Datasheet
Micropower High Sensitivity Hall Switch
Operating Parameters: TA = 25℃, VDD=3VDC Parameter
Operating Point Release Point Hysteresis
Symbol
BOP BRP BHYS
Min
Type
150
Max
200
Units
Gs Gs
50 -
90 60 -
Gs
©2009-2013 Innosen Technology Co., Ltd.
ES249
This serves to place the high current-consuming portions of the circuit into a “Sleep” mode. Periodically the device is “Awakened” by this internal logic and the magnetic flux from the Hall element is evaluated against the predefined thresholds. If the flux density is above or below the BOP/BRP thresholds then the output transistor is driven to change states accordingly. While in the “Sleep” cycle the output transistor is latched in its previous state. The design has been optimized for service in applications requiring extended operating lifetime in battery powered systems. The output transistor of the ES249 switches low (turns on) when the south pole magnetic field perpendicular to the Hall sensor exceeds the operate point threshold (B OP). After turn-on, the output voltage is VDS. When the magnetic field is reduced below the release point, BRP, the Output transistor turns off (goes high). The difference in the magnetic operate and release points is the hysteresis (BHYS) of the device. This built-in hysteresis prevents output oscillation near the switching point, and allows clean switching of the output even in the presence of external mechanical vibration and electrical noise. The TSOT-23 device is reversed from the UA package.
7. DC Electrical Characteristics
DC Operating Parameters: TA = 25℃, VDD=3V Parameter
Operating voltage Supply current Output Current Saturation Voltage Awake mode time Sleep mode time
Datasheet
Micropower High Sensitivity Hall Switch 1. Description
The ES249 Hall effect sensor IC is fabricated from mixed signal CMOS technology. It incorporates advanced chopper-stabilization techniques to provide accurate and stable magnetic switch points. The circuit design provides an internally controlled clocking mechanism to cycle power to the Hall element and analog signal processing circuits.
1.27
10. Ordering Information
Part No.
ES249
Package Code
UA (TO-92S) SO (SOT-23)
Contact Information:
Innosen Technology Co., Ltd. TEL: 022-59812098 WEB:
ES249
Magnet proximity sensor for reed switch replacement in low duty cycle applications
4. Functional Block Diagram
5. Internal Timing Circuit
Current Period Iaw Sample & Output Latched Iav Isp Awake Taw: 20cc 0 Sleep Tsl: 600μs Time
Rev3.0.0.130116
Datasheet
Micropower High Sensitivity Hall Switch