Height : 1.3μ m ~ 1.9μ m Bottom : 1.8 μ m ~ 3.8 μ m
Available Wafer Thick
430μ m ~ 900μ m
Uniformity
Within : ≤ 2%, W to W : ≤ 3%
Current Sales
China, Japan, USA
D1.56
Chip size: 14mil
19
11. PSS depth vs Intensity
14mil
Normal wafer
24mil
600(24mil) =130(14mil)
Depth=1.56 ㎛
55
Depth=1.2 ㎛
650(24mil) =132(14mil)
Depth=1.78 ㎛
1. Company Overview
Firstar Photon Co., Ltd Aug 2007 Lim, Heechoul
HQ : 526 Chobu-Ri, Mohyun-Myeon, Yong-In, Korea Factory : 한국광기원 시험생산 센터(전라남도 광주)
Company Name Establishment CEO Address Type of Business Major Products Contact E-mail Homepage
70
Depth=1.4 ㎛
675(24mil) =134(14mil)
Depth=1.84 ㎛
98
PSS depth vs Intensity
Depth=1.7 ㎛ Depth=1.9 ㎛

700(24mil) =137(14mil)
20
12. Epi Growth Equipment(MOCVD : NEXTPAK NEP2007)
16
10. PSS Shape & LED Chip Characteristic
D1.78
Chip size: 24mil
17
10. PSS Shape & LED Chip Characteristic
D1.56
Chip size: 24mil
18
10. PSS Shape & LED Chip Characteristic
26
<Ref.thesis> Effcet of Enhancement Output related to PSS Patten Shape
27
<Ref.thesis>Effcet of Enhancement Output related to PSS Patten Shape
28
<Ref.thesis> Effcet of Enhancement Output related to PSS Patten Shape
Electrode Layer 5.32㎛
1.81㎛ EPI Layer PSS 2.85㎛ 3.78㎛ Sapphire
23
15. View of PSS state by microscope
PSS 100M(magnifications)
PSS 1000M(magnifications)
N-GaN 50M(magnifications)
A, B, C grade
Grade
Round
Edge~2mm : don’t care Edge~2mm : don’t care
Flat zone
Edge~4mm : don’t care Edge~4mm : don’t care
Scratch
No scratch 1 point scratch Length ≤ 2mm Over 1 point scratch Length > 2mm
Comment
A B C Pattern shape
Edge~2mm : don’t care
Edge~4mm : don’t care Default Standard - Depth : 1.7~1.9um - Bottom size : 2.8~3.1um
Different by customer needs
Measurement
6
7. PSS Pattern List
Product Code Patterns [μ m] Etching Depth [μ m] Bottom size[μ m]
SEM Image
D0B C0D B5C B8B B0A A5A
7
4 x 1.2
2.1
3.87
3 x 2 2.5 x 1.5 2.8 x 1.2 2 x 1
Growth condition : u-GaN1010℃,n-GaN1030 ℃ ,u-GaN pressure250,u-GaN,n-GaN Ga=95
24
<Ref.thesis> SEM Images of GaN Layers on PSS Patten
25
<Ref.thesis> Effcet of Enhancement Output related to PSS Patten Shape
4
5. Process of PSS production
Photo
Exposure
Develop
Etching
1. Photo-resist coating UV light
Reticle Thickness
2. Stepping & Exposure
3. Developing exposed patterns
Product B8B (2.8 x 1.2 pattern)
10
8. PSS Pattern Image
Product B0A (2 x 1 pattern)
11
8. PSS Pattern Image
Product A5A (1.5 x 1 pattern)
12
9. Inspection Standard
4. Dry etching by ICPRIE
Plasma
Photo resist Sapphire Substrate
Sapphire Substrate
Sapphire Substrate
5
6. PSS Equipments
Stepper system
ICP-RIE
Track system
Wet bath
Semiconductor Technology Development, and Services PSS and LED Production Equipment
HQ Tel: +82 31 339 2970; Fax: +82 31 339 2972 Factory Tel : +82 62 605 9566
firstar0802@
1
2. Factory
광주
: MOCVD(2”x 6ea)
2
3. Products
PSS(Patterned Sapphire Substrate) for Epi Growth
• Typical
PSS
Size : 2”, 3”, 4”
2.0
3.3
1.9
3.0
1.88
3.26
1.56
2.42
1.5 x 1
1.33
1.84
7
8. PSS Pattern Image
Product D0B (4x1 pattern)
8
8. PSS Pattern Image
Product B5C (2.5 x 1.5 pattern)
9
8. PSS Pattern Image
Front
Back
Right
Left
21
13. Process SEM Image of Epitaxial Growth of GaN with PSS substrate
Buffer
U1 GaN
400s
1200s
2400s
U2 GaN
1000s 2000s
22
14. SEM after Epi Growth with PSS
3
4. PSS production overview
Available Wafer Size
2inch, 3inch, 4 inch
Capacity
5,000 pcs/month
Equipment
Stepper, Track system, ICP-RIE, Wet bath
Pattern Size
D1.90
Chip size: 24mil
14
10. PSS Shape & LED Chip Characteristic
D1.84
Chip size: 24mil
15
10. PSS Shape and LED Chip Characteristics
D1.78
Chip size: 24mil
A grade
Round Edge~2mm
B grade
C grade
Edge~2mm
Edge~2mm
No scratch
1 point scratch ≤ 2mm
Over 1 point scratch > 2mm
Flat zone : Edge~4mm
Edge~4mm
Edge~4mm
13