15
FIG.3: Surge peak on-state current versus number of cycles
ITSM (A) 105
90
t=20ms One cycle
75
60
45
30
15
0
Number of cycles
1
10
100
1000
FIG.5: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp<20ms, and corresponging value of I2t (dI/dt < 50A/μs)
TO-220F TO-263
Value 3.0 5.5 2.1
பைடு நூலகம்
Unit ℃/W
- 2 / 6-
上海万芯电子科技有限公司
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PACKAGE MECHANICAL DATA
- 3 / 6-
上海万芯电子科技有限公司
上海万芯电子科技有限公司
Ｓｈａｎｇｈａｉ ＷａｎＸｉｎ Ｔｅｃｈｎｏｌｏｇｙ ａｎｄ Ｅｌｅｃｔｒｏｎｉｃ Ｃｏ．．Ｌｔｄ
BT138 Series 12A TRIACs
DESCRIPTION:
BT138 series triacs with low holding and latching current are especially recommended for use on middle and small resistance type power load.
IH(Tj) /IH(Tj=25℃) 3.0
2.5
2.0
1.5
IH
1.0
0.5
0.0 -40 -20
Tj (℃) 0 20 40 60 80 100 120 140
FIG.8: Relative variations of latching current versus junction temperature
上海万芯电子科技有限公司
Ｓｈａｎｇｈａｉ ＷａｎＸｉｎ Ｔｅｃｈｎｏｌｏｇｙ ａｎｄ Ｅｌｅｃｔｒｏｎｉｃ Ｃｏ．．Ｌｔｄ
FIG.1 Maximum power dissipation versus RMS on-state current
P(w) 20
15
10
5
0
0
3
IT(RMS) (A)
6
9
12
ITM (A) 100
Tj=Tjmax
10
Tj=25℃
VTM (V)
1
0
1
2
3
4
5
FIG.6: Relative variations of gate trigger current versus junction temperature
IGT(Tj) /IGT(Tj=25℃) 4.0
100 dI/dt
VTM ITM=15A tp=380μs
IDRM IRRM
VD=VDRM VR=VRRM
Tj=25℃ Tj=25℃ Tj=125℃
Value(MAX) Unit
1.65
V
5
μA
1
mA
THERMAL RESISTANCES
Symbol
Parameter
TO-220C
Rth(j-c) junction to case(AC)
ITSM (A), I2 t (A2 s) 1000
FIG.2: RMS on-state current versus case
temperature
IT(RMS) (A) 18
α=180°
15
12
TO-220C TO-263
TO-220F
9
6
3
0
Tc (℃)
0
25
50
75
100
125
FIG.4: On-state characteristics (maximum values)
Symbol Test Condition Quadrant
IGT VD=12V RL=33Ω
VGT
VGD
VD=VDRM Tj=125℃ RL=3.3KΩ
IL
IG=1.2IGT
Ⅰ-Ⅱ-Ⅲ Ⅳ ALL
ALL Ⅰ- Ⅲ Ⅱ- Ⅳ
MAX MAX MIN MAX
Value DEF 5 10 25 10 25 70
0.272
G
2.54
0.1
H
28.0
29.8 1.102
1.173
L1
3.39
0.133
L2 1.14
1.70 0.045
0.067
L3 2.65
2.95 0.104
0.116
Φ
3.6
0.142
H L1
L3
E
Φ Max 3.5mm
A C2
F
V1
D
C3 L2
B
C
G
TO-220F
Dimensions
Ref.
VRSM
IT(RMS)
ITSM I2t dI/dt IGM
Average gate power dissipation
PG(AV)
- 1 / 6-
Value -40-150 -40-125 600/800 600/800 VDRM + 100 VRRM + 100
12
95 45 50 2 0.5
Unit ℃ ℃ V V V V
A
A A2s A/μs A W
上海万芯电子科技有限公司
Ｓｈａｎｇｈａｉ ＷａｎＸｉｎ Ｔｅｃｈｎｏｌｏｇｙ ａｎｄ Ｅｌｅｃｔｒｏｎｉｃ Ｃｏ．．Ｌｔｄ
Peak gate power
PGM
5
W
ELECTRICAL CHARACTERISTICS (Tj=25℃ unless otherwise specified)
10 0.01
ITSM
I 2t
tp(ms)
0.1
1
10 20
3.0 IGT3
2.0
IGT4
IGT1&IGT2 1.0
0.0
Tj (℃)
-40 -20 0 20 40 60 80 100 120 140
- 5 / 6-
FIG.7: Relative variations of holding current versus junction temperature
1.5 0.2 15 30 40 20 40 60
IH dV/dt
IT=100mA VD=2/3VDRM Gate Open Tj=125℃
MAX MIN
10 30 40 10 20 50
Unit
mA V V mA mA V/μs
STATIC CHARACTERISTICS
Symbol
Parameter
Ｓｈａｎｇｈａｉ ＷａｎＸｉｎ Ｔｅｃｈｎｏｌｏｇｙ ａｎｄ Ｅｌｅｃｔｒｏｎｉｃ Ｃｏ．．Ｌｔｄ
H L1
L3 D
F
PACKAGE MECHANICAL DATA
E
Max 3.6mm
Φ
C2
A
C3 L2
B
C
G
TO-220C
Dimensions
Ref.
Millimeters
Inches
Min. Typ. Max. Min. Typ. Max.
IL(Tj) /IL(Tj=25℃) 3.0
2.5
2.0
IL
1.5
1.0
0.5 0.0
-40 -20
Tj (℃) 0 20 40 60 80 100 120 140
- 6 / 6-
MAIN FEATURES
Symbol
Value
Unit
IT(RMS)
12
A
VDRM /VRRM
600/800
V
VTM
1.65
V
Rev.2.0
123 TO-220C
123
TO-220F 2
T2(2)
1 3 TO-263 T1(1)
G(3)
ABSOLUTE MAXIMUM RATINGS
Parameter
0.118
D
8.80
9.30 0.346
0.366
E
9.70
10.3 0.382
0.406
F
6.40
7.00 0.252
0.276
G
2.54
0.1
H
28.0
29.8 1.102
1.173
L1
3.63
0.143
L2 1.14
1.70 0.045
0.067
L3
3.30
0.130
V1
45°
45°
- 4 / 6-
Symbol
Storage junction temperature range
Tstg
Operating junction temperature range Repetitive peak off-state voltage(Tj=25℃) Repetitive peak reverse voltage(Tj=25℃)
Tj VDRM VRRM
Non repetitive surge peak Off-state voltage