-50 -25 0 25 50 75 100 125 150
TJ - Junction Temperature (°C)
VGS-Gate-Source Voltage (V)
10 VDS=10V ID=1A
8
Gate Charge
6
4
2
00
4
8
12
16
20
QG - Gate Charge (nC)
Capacitance (pF)
4
TJ=25°C
TJ=-55°C
0
0.0
0.5
1.0
1.5
2.0
2.5
VGS - Gate-to-Source Voltage (V)
VGS(th)-Threshold Voltage (V) (Normalized)
Threshold Voltage vs. Junction Temperature
td(ON) Turn-on Delay Time
Tr Turn-on Rise Time
td(OFF) Turn-off Delay Time
Tf Turn-off Fall Time
Test Condition
N-Channel VDS=10V , IDS= 8A VGS=4.5V P-Channel VDS=-10V , IDS=-3A VGS=-4.5V
VSD -Source-to-Drain Voltage (V)
Power (W)
Single Pulse Power
60
48
36
24
12
0
0.01
0.1
1
10
100
Time (sec)
Normalized Effective Transient Thermal Impedance
Normalized Thermal Transient Impedence, Junction to Ambient
Handling Code TR : Tape &aPM4500 XXXXX
XXXXX - Date Code
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders.
APM4500
Typical Characteristics (Cont.)
RDS(ON)-On-Resistance (Ω)
On-Resistance vs. Gate-to-Source Voltage
0.10 ID=8A
0.09 0.08 0.07 0.06 0.05 0.04 0.03 0.02 0.01 0.00
• P-Channel
-20V/-4.3A , RDS(ON)=80mΩ(typ.) @ VGS=-4.5V RDS(ON)=105mΩ(typ.) @ VGS=-2.5V
• Super High Dense Cell Design for Extremely Low
RDS(ON)
• Reliable and Rugged
Crss Reverse Transfer Capacitance
APM4500 Min. Typ. Max.
Unit
N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch
0.06
0.05
0.04 0.03 0.02
VGS=2.5V VGS=4.5V
0.01
0.00 0
2
4
6
8
10
ID - Drain Current (A)
Copyright ANPEC Electronics Corp.
4
Rev. A.2 - May., 2003

APM4500
Dual Enhancement Mode MOSFET (N-and P-Channel)
Features
Pin Description
• N-Channel
20V/8A ,
RDS(ON)=22mΩ(typ.) @ VGS=4.5V RDS(ON)=30mΩ(typ.) @ VGS=2.5V
N-Channel 20
P-Channel -20
±12
±12
8
-4.3
35
-17
2.5
2.5
1.0
1.0
150
-55 to 150 62.5
Unit V
A
W °C °C °C/W
Electrical Characteristics (TA = 25°C unless otherwise noted)
2
1
Duty Cycle = 0.5
VDSS VGSS ID* IDM
Drain-Source Voltage Gate-Source Voltage Maximum Drain Current – Continuous Maximum Drain Current – Pulsed
PD
Maximum Power Dissipation
10 13 9 12 3
nC 3 2.5 1 16 32 13 21.5 40 75 36 56 ns 42 78 45 69.5 20 35 37 57.5 675 510 178
pF 270 105 120
Notes b : Guaranteed by design, not subject to production testing
Copyright ANPEC Electronics Corp.
3
Rev. A.2 - May., 2003

APM4500
Typical Characteristics
N-Channel MOSFET
ID-Drain Current (A)
Output Characteristics
±100 nA ±100
N-Ch P-Ch
22 26 30 36 80 90 mΩ 105 115
N-Ch P-Ch
0.8 1.3 V -0.7 -1.3
Copyright ANPEC Electronics Corp.
2
Rev. A.2 - May., 2003

IGSS Gate Leakage Current
Ra DS(ON)
Drain-Source On-state Resistance
VSDa Diode Forward Voltage
VDS=16V , VGS=0V VDS=-16V , VGS=0V VDS=VGS , IDS=250µA VDS=VGS , IDS=-250µA VGS=±12V , VDS=0V VGS=±12V , VDS=0V VGS=4.5V , IDS=8A VGS=2.5V , IDS=5.2A VGS=-4.5V , IDS=-4.3A VGS=-2.5V , IDS=-2A ISD=1.7A , VGS=0V ISD=-1.25A , VGS=0V
1.50 IDS=250µA
1.25
1.00
0.75
0.50
0.25
0.00 -50 -25 0 25 50 75 100 125 150
Tj - Junction Temperature (°C)
RDS(ON)-On-Resistance (Ω)
On-Resistance vs. Drain Current
Symbol
Parameter
Test Condition
Static
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , IDS=250µA
IDSS
Zero Gate Voltage Drain Current
VGS(th) Gate Threshold Voltage
S1
N-Channel MOSFET
D2 D2
P-Channel MOSFET
Ordering and Marking Information
APM4500
Handling Code Temp. Range Package Code
Package Code K : SO-8
Operation Junction Temp. Range C : -55 to 150°C
• SO-8 Package
Applications
• Power Management in Notebook Computer ,
Portable Equipment and Battery Powered Systems.
S1
1
G1
2
S2
3
G2
4
8
D1
7
D1
6
D2
5
D2
SO-8
D1 D1
S2
G2 G1
APM4500
Electrical Characteristics (Cont.) (TA = 25°C unless otherwise noted)
Symbol
Parameter
Dynamicb