CZ process with Induction Heating system
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Temperature in the crystal and in the melt
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FEMAG-CZ/OX
The interface shape and position is a result of the simulation
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Sapphire Crystal Growth Simulation
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Sapphire Simulation Objective
➢ The market of Sapphire is experiencing a very fast growth rate and become very competitive ➢Many companies invest in simulation software in order to reinforce their positions ➢ HEM, Czochralski and Kyropoulos process require optimization and a good understanding ➢ Strong need for efficient numerical tools. ➢ Radiation effects in the participating crystal and melt is a complex problem.
Result using coarse mesh
Result using BLM mesh
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Velocity field
FEMAGSoft © 2012
FEMAG-HEM
FEMAG-HEM Software to simulate Sapphire Growth by Heat Exchange Method
Local temperature field
BLM mesh enables a better prediction of the crystalisation interface
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Result using BLM mesh FEMAGSoft © 2012
RADIATION
CONVECTION CONDUCTION
MESH
GEOMETRY
…
FEMAG3 NEW 2011 •Very accurate : Finite Element and Spectral methods •Very efficient : 3D simulations in less 1 day •Very flexible : Very fast development of new demand
the resulting crystal quality.
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Sapphire Simulation Objective
CZOCHRALSKI
KYROPULOS
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HEM
FEMAG-CZ/OX
FEMAG-CZ/OX Software to simulate Sapphire Growth by CZ and Kyropoulos
Prof. François Dupret 1989 First research on Silicon growth in University of Louvain. 1992 First collaborations with major IC companies.
Development of defect-free silicon wafer production. Today, more than 35 patents are referencing FEMAG Software 2003 FEMAGSoft S.A., spin-off from University of Louvain. 2006 Collaboratrion with major Solar companies. Development of low-cost and low-oxygen content processes. 2009 Large investment for a new software framework 2010 Release of Software application for Sapphire ingot production.
▪ Global ▪ All the furnace components are considered. ▪ All the heat transfer mode are considered (radiation transfer, heat conduction, melt and gas convection) ▪ Induction and ohmic heating
➢ General introduction ➢ Sapphire Growth
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Introduction
For more than 25 years, FEMAGSoft develops simulation software dedicated to the research and development of optimal crystal growth processes. 1984 First research on Germanium growth in University of Louvain.
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Sapphire Simulation Objective
Our goal is to provide accurate simulation tool, able to take all the process features into account and to optimize the growth process in terms of
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晶体生长模拟FEMAG 蓝宝石生长模拟方法
FEMAGSoft S.A., Belgium
A SPIN-OFF company from
Universite catholique de Louvain Belgium
Professor F. Dupret
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Content
Specifications: - Temperature in the sapphire and in all furnace components by solving the
global heat transfer in the furnace (radiation, conduction , convection). - Flow velocity in the sapphire liquid phase. - Crystallization front shape - Advanced radiation heat transfer in the sapphire - Gas convection - Anisotropic thermal stresses in the crystal
Dynamic simulations
▪ A dynamic simulation tool ▪ Complete process simulation ▪ Dynamic effect of interface deformation ▪ Varying processing conditions
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Global simulations
No simplification of the process conditions
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HEM Furnace for Sapphire
Czochralski Furnace for Silicon
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Specifications: - Temperature in the sapphire and in all furnace components by solving the
global heat transfer in the furnace (radiation, conduction , convection). - Flow velocity in the sapphire liquid phase. - Crystallization front shape - Ohmic and Induction Heating - Advanced radiation heat transfer in the sapphire - Gas convection - Anisotropic thermal stresses in the crystal
CZ process with Induction Heating system
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Melt velocity amplitude
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FEMAG-CZ/OX / CZ and KYROPOULOS process
Temperature field in the melt
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Czochralski process
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Directional Solidification System