Infineo n IGBT 模块功耗计算
V7.5c 东方科技
module
selection
for 3-phase
inverter
application
s
ECM-340选定模块输入参数直流电压V dc 960V
输出频率f 050Hz
开关频率f s 600Hz
调制系数m 0.8
功率因数
φ0.9输出电流
I RMS 170A 热参数
最大结温
T j 125°C 最大环境
温度 T a 40°C
每桥臂散
热器热阻R th 0.15K/W
结到壳热
阻 R jc IGBT:0.085DIODE:0.13 K/W 壳到散热器热阻R ch IGBT:0.033DIODE:0.051 K/W
每桥臂热
阻 R arm R jc =0.051 R ch =0.020 K/W 模块热阻
R moudle R jc =0.026 R ch =0.010 K/W 芯片损耗（170A ）IGBT Diode 导通损耗
P cond 112W 26W 开关损耗
P SW 32W 13W 总损耗144W 39W P RCC'EE'=11W Per Arm P 总=183.3W P 总=366.6W P RCC'EE'损耗
通过接线端
子散发出
去，极端条件下也会进
入基板。

温度（170A ）Diode
最大结温
T j 77°C D T j 最小结温
T j 75
°C 1K 壳温 T c 71°C
散热器温
度 T hs 69°C
最大电流
Tj <= 125°C 312A
温度（311.7A ）Diode 最大结温
T j 125
°C D T j 最小结温
T j 122
°C 3K 壳温 T c 114°C 散热器温
度 T hs 110°C 损耗 vs.电流I RMS I peak P IGBT P diode P RCC'EE'Tj_diode
[A][A][W][W][W][°C]213012114642602514149649040181528512058223571061507626461138195108327681702401443910772123001984916892763902936628111339480404854213642460057711465176FF300R17KE3 >>Diode 62mm HB
average losses for sinusoidal output current at 600 Hz
switching frequency
losses and corresponding junction temperature ripple for the diode at Irms =170A case-to-heatsink and heatsink-to-ambient for Ta = 40°C
and a given heatsink
temperature distribution across diode junction-to-case,
0100
2003004005006007008000100200300400500
W A RMS 损耗(IGBT) / W 损耗(diode) / W 每桥臂损耗(IGBT + diode) / W max. losses (IGBT)
@ Tcase=80°C
max. losses (diode)
@ Tcase=80°C
405060
708090100110120130140150021426485106138170212276339424℃
A RMS
T j-c
T c-hs T hs-a Tjmax = 125°C 71727374757677
0204060801001201400.0000.0050.0100.0150.020
℃
W
s
损耗p(t)平均损耗
温度波动
Infineon 计算程序，/iposim 内部资料 结构室整理2022/2/24。