100 7 5
3 2
See specified Test Circuit.
See specified Test Circuit.
Switching Time Test Circuit
PW=20µs D.C.≤1%
INPUT
VR
IB1 RB
IB2
OUTPUT RL=50Ω
50Ω
+
+
100µF
470µF
--5V
25V
10IB1= --10IB2=IC=500mA (For PNP, the polarity is reversed)
元器件交易网
Ordering number : ENN1727D
2SB1123 / 2SD1623
PNP / NPN Epitaxial Planar Silicon Transistors
2SB1123 / 2SD1623
High-Current Switching Applications
0 0
50mA
IC -- VCE
40mA 25mA
2SD1623 Pulse
15mA
8mA
4mA
2mA
IB=0
0.4
0.8
1.2
1.6
2.0
2.4
Collector-to-Emitter Voltage, VCE -- V ITR08892
IC -- VCE
7mA 6mA
2SD1623 Pulse
5mA
Collector-to-Emitter Voltage, VCE -- V ITR08893
Collector Current, IC -- mA
Collector Current, IC -- A
2.4 2.0 1.6 1.2 0.8 0.4
0 0
1200 1000
800 600 400 200
4.5
1.6
1.5
1.0 2.5 4.25max
0.4
0.5
3 1.5 2
1
3.0
0.75
0.4
1 : Base 2 : Collector 3 : Emitter
SANYO : PCP
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse)
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
元器件交易网
2SB1123 / 2SD1623
Continued from preceding page.
Parameter
Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N1501 TS IM / 92098 HA (KT) / 4107 KI / N275 KI / 3045 MW, TS No.1727-1/5
Gain-Bandwidth Product, f T -- MHz
DC Current Gain, hFE
200
0 0
1000 7 5
3 2
0.2
0.4
0.6
0.8
1.0
1.2
Base-to-Emitter Voltage, VBE -- V ITR08896
hFE -- IC
2SD1623 VCE=2V
Collector Current, IC -- mA
Cob -- VCB
ITR08899
2SB1123 f=1MHz
3 2
10
7 5 --1.0
23
5 7 --10
23
5 7 --100
Collector-to-Base Voltage, VCB -- V ITR08901
Output Capacitance, Cob -- pF
DC Current Gain, hFE
2SB1123 / 2SD1623
--1200 --1000
IC -- VBE 1200 2SB1123
VCE= --2V
1000
IC -- VBE
2SD1623 VCE=2V
Collector Current, IC -- mA
--800
800
--600
600
Symbol
VCBO VCEO VEBO
IC ICP
Collector Dissipation
PC
Junction Temperature
Tj
Storage Temperature
Tstg
Electrical Characteristics at Ta=25°C
Conditions Mounted on a ceramic board (250mm2!0.8mm)
--2.4 --2.0 --1.6 --1.2 --0.8 --0.4
0 0
--1200 --1000
--800 --600 --400 --200
0 0
IC -- VCE
--50mA
--20mA
2SB1123 Pulse
--10mA --8mA --6mA
--4mA
--2mA
IB=0
--0.4
--0.8
Ratings
min
typ
150
(22)12
(--0.3)0.15
(--)0.9
(--)60
(--)50Βιβλιοθήκη (--)6(60)60
(450)550
(30)30
max
(--0.7)0.4 (--)1.2
Unit
MHz pF V V V V V ns ns ns
Collector Current, IC -- A
--400
400
--200
0 0
1000 7 5
3 2
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
Base-to-Emitter Voltage, VBE -- V ITR08895
hFE -- IC
2SB1123 VCE= --2V
100 7 5
3 2
10 --10
1000 7 5
4mA
3mA
2mA
1mA
IB=0
2
4
6
8
10
12
Collector-to-Emitter Voltage, VCE -- V ITR08894
No.1727-2/5
Collector Current, IC -- mA
元器件交易网
Collector Current, IC -- mA
Rank
R
S
T
U
hFE 100 to 200 140 to 280 200 to 400 280 to 560 Marking 2SB1123 : BF
2SD1623 : DF
min
100* 40
Ratings
Unit
typ
max
(--)100
nA
(--)100
nA
560*
Continued on next page.
Symbol
Conditions
fT Cob
VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO
ton tstg
tf
VCE=(--)10V, IC=(--)50mA VCB=(--)10V, f=1MHz IC=(--)1A, IB=(--)50mA IC=(--)1A, IB=(--)50mA IC=(--)10µA, IE=0 IC=(--)1mA, RBE=∞ IE=(--)10µA, IC=0 See specified Test Circuit.
--1.2
--1.6
--2.0
--2.4
Collector-to-Emitter Voltage, VCE -- V ITR08891
IC -- VCE