SSC8631GS1Complementary Enhancement Mode Field Effect Transistorz Features z ApplicationsN-ChannelVDS VGS RDSon TYP ID30V±20V 22mR@-10V7A 35mR@-4V5P-ChannelVDS VGS RDSon TYP ID-30V±20V 27mR@-10V-6.5A39mR@-4V5¾Inverter¾CCFL Driverz Pin configurationTop Viewz General DescriptionSSC8631GS1uses advanced trench technology to provideexcellent R DS(ON)and low gate charge.The complementaryMOSFETs may be used to form a level shifted high sideswitch,and for a host of other applications.z PackageInformationz Absolute Maximum Ratings@T A=25°C unless otherwise notedParameter Symbol N-channel P-channel Unit Drain-Source Voltage V DSS30-30V Gate-Source Voltage V GSS±20±20V Continuous Drain Current(Note1)I D7-6A Plused Drain Current(Note2)I DM30-30A Total Power Dissipation(Note1)P D11W Operating and Storage Junction Temperature Range T J,T STG-55to+150-55to+150°CSSC8631GS1 z N-channel Electrical Characteristics@T A=25°C unless otherwise notedParameter Symbol Test Conditions Min Typ Max Unit Drain–Source Breakdown Voltage V(BR)DSS V GS=0V,I D=250uA30----V Gate Threshold Voltage V GS(TH)V DS=V GS,I D=250uA1 1.53V Gate–Body Leakage Current I GSS V GS=±20V,V DS=0V----±100nA Zero Gate Voltage Drain Current I DSS V DS=24V,V GS=0V----1uADrain–Source On–State Resistance R DS(ON)V GS=10V,I D=5A--2228mR V GS=4.5V,I D=5A--3540Forward Transconductance G FS V DS=5V,I D=5A--7.3--S Diode Forward Voltage V SD V GS=0V,I S=1A--0.76 1.7VInput Capacitance C ISSV DS=15V,V GS=0V,f=1.0MHz --407--pFOutput Capacitance C OSS--113--Reverse Transfer Capacitance C RSS--57--Turn–On Delay Time T D(ON)V DS=15V,R L=2.3R,V GS=10V,R GEN=3R ----18nSTurn–Off Delay Tim T D(OFF)----70z P-channel Electrical Characteristics@T A=25°C unless otherwise notedParameter Symbol Test Conditions Min Typ Max Unit Drain–Source Breakdown Voltage V(BR)DSS V GS=0V,I D=-250uA-30----V Gate Threshold Voltage V GS(TH)V DS=V GS,I D=-250uA-1-1.5-3V Gate–Body Leakage Current I GSS V GS=±20V,V DS=0V----±100nA Zero Gate Voltage Drain Current I DSS V DS=-24V,V GS=0V-----1uADrain–Source On–State Resistance R DS(ON)V GS=-10V,I D=-6A--2735mR V GS=-4.5V,I D=-5A--3950Forward Transconductance G FS V DS=-5V,I D=-4A--12--S Diode Forward Voltage V SD V GS=0V,I S=-1A---0.77-1.7VInput Capacitance C ISSV DS=-15V,V GS=0V,f=1.0MHz --950--pFOutput Capacitance C OSS--137--Reverse Transfer Capacitance C RSS--118--Turn–On Delay Time T D(ON)V DS=-15V,R L=2.5R,V GS=-10V,R GEN=3R ----18nSTurn–Off Delay Tim T D(OFF)----70Notes:1.DUT is mounted on a1in2FR-4board with2oz.Copper in a still air environment at25°C，the current rating is based onthe DC（<10s）test conditions2.Repetitive rating,pulse width limited by junction temperature.V DS , Drain-Source Voltage (V)Figure 1. Output CharacteristicsV GS , Gate-to-source Voltage(V)Figure 2. Transfer Characteristics0100200300400500600700C , C a p a c i t a n c e (p F )V DS , Drain-to-Source Voltage (V)Figure 3. Capacitance R D S (O N ),O n R e s i s t a n c e (m R )Tj, Junction Temperature (oC)Figure 4. On Resistance Vs. Temperature-500501001501.01.21.41.61.82.0Tj, Junction Temperature (oC)Figure 5. Threshold Vs. TemperatureV T H , T h r e s h o l d V o l t a g e (V )0.00.20.40.60.8 1.0 1.20.010.1110I S , S o u r c e D r a i n C u r r e n t (A )Figure 6. Diode Forward CharacteristicsV SD , Body Diode Forward Voltage (V)SSC8631GS1zP-channel Typical Performance Characteristics012345678910I D , D r a i n C u r r e n t (A )Figure 1. Output CharacteristicsV DS , Drain-Source Voltage (V)0.00.51.01.52.02.53.03.54.0012345678910I D , D r a i n c u r r e n t(A )V GS , Gate-to-source Voltage(V)Figure 2. Transfer Characteristics0200400600800100012001400C , C a p a c i t a n c e (p F )V DS , Drain-to-Source Voltage (V)Figure 3. Capacitance5101520253035404550Tj, Junction Temperature (oC)Figure 4. On Resistance Vs. TemperatureR D S (O N ),O n R e s i s t a n c e (m R )-50-252550751001251500.91.01.11.21.31.41.51.6Tj, Junction Temperature (oC)Figure 5. Gate Threshold Vs. TemperatureV T H , T h r e s h o l d V o l t a g e (V )0.40.50.60.70.80.9 1.00.1110I S , S o u r c e D r a i n C u r r e n t (A )Figure 6. Diode Forward CharacteristicsV SD , Body Diode Forward Voltage (V)SSC8631GS1 DISCLAIMERSPIRIT-SEMI RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY,FUNCTION OR DESIGN.SPIRIT-SEMI DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;NEITHER DOES IT CONVEY ANY LICIENCE UNDER ITS PATENT RIGHTS,NOR THE RIGHTS OF OTHERS.THE GRAPHS PROVIDED IN THIS DOCUMENT ARE STATISTICAL SUMMARIES BASED ON A LIMITED NUMBER OF SAMPLES AND ARE PROVIDED FOR INFORMATIONAL PURPOSE ONLY.THE PERFORMANCE CHARACTERISTICS LISTED IN THEM ARE NOT TESTED OR GUARANTEED.IN SOME GRAPHS,THE DATA PRESENTED MAY BE OUTSIDE THE SPECIFIED OPERATING RANGE(E.G,. OUTSIDE SPECIFIED POWER SUPPLY RANGE)AND THEREFORE OUTSIDE THE WARRANTED RANGE.。