Sperrverzögerungsladung recovered charge
Abschaltenergie pro Puls reverse recovery energy
VGE = 0V, Tvj = 25°C, IF =
VCE = 0V, VGE =20V, Tvj =25°C
IC = INenn,
VCC =
VGE = ±15V, Tvj = 25°C, RG =
VGE = ±15V, Tvj = 125°C, RG =
IC = INenn,
VCC =
VGE = ±15V, Tvj = 25°C, RG =
VGE = ±15V, Tvj = 125°C, RG =
TC = 80 °C TC = 25 °C
tP = 1 ms, TC = 80°C
Gesamt-Verlustleistung total power dissipation
TC = 25°C
Gate-Emitter-Spitzenspannung gate-emitter peak voltage
IC = INenn,
VCC =
VGE = ±15V, Tvj = 25°C, RG =
VGE = ±15V, Tvj = 125°C, RG =
IC = INenn,
VCC =
VGE = ±15V, Tvj = 25°C, RG =
VGE = ±15V, Tvj = 125°C, RG =
IC = INenn,
min. typ. max.
VF
-
0,95
-
V
V(TO)
-
-
0,8
V
rT
-
-
10,5 mΩ
IR
-
2
-
mA
RAA'+CC'
-
5
-
mΩ
min. typ. max.
VCE sat
-
-
1,7 2,2
V
2
-
V
VGE(TO)
5,0
5,8
6,5
V
Cies
-
1,1
-
nF
ICES
-
-
5
mA
IGES
-
-
400 nA
td,on
Vorläufige Daten Preliminary data
VISOL
2,5
kV
Elektrische Eigenschaften / Electrical properties
Charakteristische Werte / Characteristic values
Diode Gleichrichter/ Diode Rectifier
Tvj = 25°C Tvj = 150°C Tvj = 25°C Tvj = 150°C
Transistor Wechselrichter/ Transistor Inverter
Kollektor-Emitter-Sperrspannung collector-emitter voltage
Kollektor-Dauergleichstrom DC-collector current
Tvj = 150°C,
Modul Leitungswiderstand, Anschlüsse-Chip lead resistance, terminals-chip
TC = 25°C
IF = 15 A VR = 1600 V
Transistor Wechselrichter/ Transistor Inverter
VCES
1200
V
IC,nom.
10
A
IC
18
A
ICRM
20
A
Ptot
80
W
VGES
+/- 20V
V
Diode Brems-Chopper/ Diode Brake-Chopper
Dauergleichstrom DC forward current
Tc = 80 °C
Periodischer Spitzenstrom repetitive peak forw. current
VCC =
VGE = ±15V, Tvj = 125°C, RG =
LS =
IC = INenn,
VCC =
VGE = ±15V, Tvj = 125°C, RG =
LS =
tP ≤ 10µs, VGE ≤ 15V, RG =
Tvj≤125°C,
VCC =
15 A 15 A
0,5 mA
1200 V
600 V 75 Ohm 75 Ohm 600 V 75 Ohm 75 Ohm 600 V 75 Ohm 75 Ohm 600 V 75 Ohm 75 Ohm 600 V 75 Ohm 45 nH 600 V 75 Ohm 45 nH 75 Ohm 720 V
Kollektor-Emitter Sättigungsspannung collector-emitter saturation voltage
VGE = 15V, Tvj = 25°C, IC = VGE = 15V, Tvj = 125°C, IC =
Gate-Schwellenspannung gate threshold voltage

Technische Information / Technical Information
IGBT-Module IGBT-Modules
FP15R12KE3G
Elektrische Eigenschaften / Electrical properties
Höchstzulässige Werte / Maximum rated values
Durchlaßspannung forward voltage
Tvj = 150°C,
Schleusenspannung threshold voltage
Tvj = 150°C
Ersatzwiderstand slope resistance
Tvj = 150°C
Sperrstrom reverse current
Diode Gleichrichter/ Diode Rectifier Periodische Rückw. Spitzensperrspannung repetitive peak reverse voltage
Gleichrichter Ausgang Grenzeffektivstrom maximum RMS current at Rectifier output
VGE = 0V, Tvj = 25°C, VCE =
Gate-Emitter Reststrom gate-emitter leakage current Einschaltverzögerungszeit (ind. Last) turn on delay time (inductive load)
Periodischer Kollektor Spitzenstrom repetitive peak collector current
Tc = 80 °C TC = 25 °C
tP = 1 ms,
Gesamt-Verlustleistung total power dissipation
TC = 25°C
Grenzlastintegral I2t - value
Tc = 80 °C tP = 1 ms VR = 0V, tp = 10ms, Tvj = 125°C
IF
15
A
IFRM
30tor Brems-Chopper/ Transistor Brake-Chopper
Einschaltverlustenergie pro Puls turn-on energy loss per pulse
Abschaltverlustenergie pro Puls turn-off energy loss per pulse
Kurzschlußverhalten SC Data
IGBT-Module IGBT-Modules
FP15R12KE3G
Elektrische Eigenschaften / Electrical properties
Vorläufige Daten Preliminary data
Charakteristische Werte / Characteristic values
IGBT-Module IGBT-Modules
FP15R12KE3G
Modul Isolation/ Module Isolation
Isolations-Prüfspannung insulation test voltage
RMS, f = 50 Hz, t = 1 min. NTC connected to Baseplate
VCE = VGE, Tvj = 25°C, IC =
Eingangskapazität input capacitance
f = 1MHz, Tvj = 25°C VCE = 25 V, VGE = 0 V
Kollektor-Emitter Reststrom collector-emitter cut off current
Kollektor-Emitter-Sperrspannung collector-emitter voltage
Kollektor-Dauergleichstrom DC-collector current