Diode肖特基二极管 (Schottky Diode)Symbol Para m eterV RRM Peak repetitive reverse voltage 反向重复峰值电压V RWM Working peak reverse voltage 反向工作峰值电压V R DC Blocking Voltage 反向直流电压V R(RMS)RMS Reverse Voltage 反向电压有效值I F(AV)Average Rectified Forward Current 正向平均电流Current 反向电流I R ReverseI FSM Non-Repetitive Peak Forward Surge Current 正向浪涌电流Voltage 正向直流电压V F ForwardC j Typical Junction Capactiance 结电容Dissipation 耗散功率P D PowerT j Operating Junction Temperature 工作结温T stg Storage Temperature Range 存储温度R th(j-a)Thermal Resistance from Junction to Ambient 结到环境的热阻Pin二极管 (Pin Diode)Symbol Para m eterV R Continuous reverse voltage 反向直流电压I F Continuous forward current 正向直流电流voltage 正向电压V F Forwardcurrent 反向电流I R Reversecapacitance 二极管电容C d dioder d diode forward resistance 二极管正向电阻P tot total power dissipation 总的功率损耗Temperature 结温T j Junctiontemperature 存储温度T stg storageTVS二极管 (TVS Diode)Symbol Para m eterI PP Maximum reverse peak pulse current 峰值脉冲电流voltage 钳位电压V C ClamplingI R Maximum reverse leakage current 最大反向漏电流voltage 击穿电压V(BR) BreakdownV RWM Working peak reverse voltage 反向工作峰值电压V F Forwardvoltage 正向电压current 正向电流I F Forwardcurrent 测试电流I T Test可控硅(SCR)Symbol Para m eterV DRM Peak repetitive off-state voltage 断态重复峰值电压V RRM Peak repetitive reverse voltage 反向重复峰值电压I T(RMS)RMS On-state current 额定通态电流I TSM Non repetitive surge peak on-state current 通态非重复浪涌电流I GM Forward peak gate current 控制极重复峰值电流V TM peak forward on-state voltage 通态峰值电压I GT Gate trigger current 控制极触发直流电流V GT Gate trigger voltage 控制极触发电压current 维持电流I H HoldingI DRM Peak repetitive off-state current 断态重复峰值电流I RRM Peak repetitive reverse current 反向重复峰值电流P G(AV)Average gate power dissipation 控制极平均功率Tj operating junction temperature range 工作结温Tstg storage temperature range 存储温度稳压管(Three Terminal Voltage Regulator)Symbol Para m eterV I inputvoltage 输入电压Vo outputvoltage 输出电压ΔVo Loadregulation 输出调整率ΔVo Lineregulation 输入调整率Iq quiescentcurrent 偏置电流ΔIq quiescent current change 偏置电流变化量V N Output noise voltage 输出噪声电压RR Ripplerejection 纹波抑制比Vd dropoutvoltage 降落电压Isc short circuit current 短路输出电流Ipk peakcurrent 峰值输出电流T opr operating junction temperature range 结温T stg storage temperature range 存储温度43系列稳压管(Adjustable Shunt Regulator)Symbol Para m eterV KA Cathodevoltage 阴极电压I K Cathode current range(continous) 阴极电流I ref Reference input current range,continous 基准输入电流P D Powerdissipation 耗散功率R th(j-a)Thermal resistance from junction to ambient 结到环境的热阻T opr operating junction temperature range 工作结温Tstg storage temperature range 存储温度V ref Reference input voltage 基准输入电压ΔV ref(dev)Deviation of reference input voltage over fulltemperature range全温度范围内基准输入电压的偏差ΔV ref/ΔV KA Ratio of change in reference input voltage to the changein cathode voltage基准输入电压变化量与阴极电压变化量的比ΔI ref(dev)Deviation of reference input current over fulltemperature range全温度范围内基准输入电流的偏差I min Minimum cathode current for regulation 稳压时最小负极电流I off Off-state cathode current 关断状态阴极电流|Z KA| Dynamicimpedance 动态阻抗普通晶体管 (T ransistor)Symbol Para m etervoltage 发射极开路,集电极-基极电压V CBO Collector-Basevoltage 基极开路,集电极-发射极电压V CEO Collector-emittervoltage 集电极开路,发射极-基极电压V EBO Emitter-basecurrent 集电极电流I C CollectorP C Collector power dissipation 集电极耗散功率temperature 结温T j JunctionT stg storagetemperature 存储温度V(BR)CBO Collector-Base breakdown voltage 发射极开路,集电极-基极反向电压breakdownvoltage 基极开路,集电极-发射极反向电压V(BR)CEO Collector-emitterV(BR)EBO Emitter-base breakdown voltage 集电极开路,发射极-基极反向电压I CBO Collector cut-off current 发射极开路,集电极-基极截止电流current 集电极开路,发射极-基极截止电流cut-offI EBO EmitterI CEO Collector cut-off current 基极开路,集电极-发射极截止电流h FE DC current gain 共发射极正向电流传输比的静态值saturation voltage 集电极-发射极饱和电压V CEsat Collector-emittersaturation voltage 基极-发射极饱和电压V BEsat Base-emittervoltage 基极-发射极电压V BE Base-emitterf T Transitionfrequency 特征频率C obo Collector output capacitance 共基极输出电容C ibo Collector input capacitance 共基极输入电容figure 噪声系数F Noisetime 开通时间t on Turn-ontime 关断时间t off Turn-offtime 上升时间t r Risetime 存储时间t s Storagetime 下降时间t f Falltime 延迟时间t d Delay数字晶体管(Digital Transistor)Symbol Para m etervoltage 直流电压V CC Supplyvoltage 输入电压V IN inputcurrent 输出电流I O outputdissipation 功率损耗P D Powervoltage 输入截止电压V I(off) Input-offvoltage 输入开启电压V I(on) Input-onvoltage 输出电压V O(on) outputcurrent 输入电流I I inputcurrent 输出截止电流I O(off) outputG I DC current gain 直流增益R1 Inputresistance 输入电阻ratio 电阻率R2/R1 Resistancefrequency 传输频率f T Transitiontemperature 结温T j junctionT stg storage temperature range 存储温度voltage 发射极开路,集电极-基极反向击穿电压V CBO Collector-baseV CEO Collector-emittervoltage 基极开路,集电极-发射极反向击穿电压voltage 集电极开路,发射极-基极反向击穿电压V EBO Emitter-baseMOS管(MOSFET)Symbol Para m eterI D Continousdraincurrent 漏极直流电流V GS Gate-sourcevoltage 栅-源电压V DS Drain-sourcevoltage 漏-源电压E AS single pulse avalchane energy 单脉冲雪崩击穿能量R th(j-a)Thermal resistance from junction to ambient 结到环境的热阻R th(j-c)Thermal resistance from junction to case 结到管壳的热阻V(BR)DSS Drain-source breakdown voltage 漏源击穿电压V(GS)th Gate threshold voltage 栅源阈值电压I GSS Gate-body leakage current 漏-源短路的栅极电流I DSS Zero gate voltage drain curent 栅-源短路的漏极电流r DS(on) Drain-sourceon-resistance 漏源通态电阻g fs Forwardtransconductance 跨导V SD Diode forward voltage 漏源间体内反并联二极管正向压降C iss Inputcapacitance 栅-源电容C oss Outputcapacitance 漏-源电容C rss Reverse transfer capacitance 反向传输电容R g Gateresistance 栅极电阻t d(on)Turn-on delay time 开通延迟时间t r Risetime 上升时间t d(off)Turn-off delay time 关断延迟时间t f Falltime 下降时间I DM Pulsed drain current 最大脉冲漏电流P D Powerdissipation 耗散功率T j operating junction temperature range 结温T stg storage temperature range 存储温度。