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2Grapheneonmetalsurfaces
3J.Wintterlina,*,M.-L.Bocquetb
4aLudwig-Maximilians-UniversitätMünchen,Dept.ChemieundBiochemieandCenterforNanoscienceCeNS,Butenandtstr.5-13,81377Munich,Germany5bUniversitédeLyon,LaboratoiredeChimie,EcoleNormaleSupérieuredeLyon,CNRS,F69007Lyon,France
6
8articleinfo
9Articlehistory:10Availableonlinexxxx
11Keywords:12Review13Graphene14Metalsurfaces15Nickel16Ruthenium17Platinum18Iridium1920abstract
21Thearticlereviewsworkongraphenemonolayersadsorbedonmetalsurfaces.Graphenelayersonmetals22havebeenpreparedbysurfacesegregationofcarbonandbydecompositionofhydrocarbons.Thefilms23areoftennotrotationallyalignedtothemetalsurface.However,foranumberofhexagonallyclose-24packedsurfacesperfectlyorderedepitaxialoverlayerscanbeobtained,withdomainslargerthantheter-25racesofthemetalsubstrate.Inmostcasesthewell-orderedoverlayersdisplaymoiréstructureswith26largeperiodicities,resultingfromthelatticemismatchbetweengrapheneandtheunderlyingmetal.27Thesestructuresareconnectedwithabucklingofthegraphenelayerindicatinglocalvariationsofthe28bindingtothemetal.Forthemetal–graphenespacingsvaluesbetweenapproximately2.1and3.8Åwere29found,dependingonthemetal.Reasonsforthesestrongvariationsarenotyetclear,butthereareindi-30cationsthatthesystemsfallintotwoclassesthatdifferqualitativelywithrespecttothemetal/graphene31interaction.Thesevariationsarealsoreflectedbytheelectronicstructure.Therearemetal–graphenesys-32temsinwhichthepbandissignificantlydownshiftedinenergycomparedtothefree-standinggraphene,33andabandgapofordereVhasopenedattheKpointoftheBrillouinzone.Inothersystems,theelectronic34structureoffree-standinggrapheneisalmostintact.Theperfectnessoftheepitaxialmoiréphasesoffers35promisingapplications,e.g.,astemplatesfornanostructures.36Ó2009PublishedbyElsevierB.V.
37
38391.Introduction
40Thepublicationin2004ofamethodtopreparefree-standing
41graphene,single2Dcarbonsheetswiththesamestructureasthe
42individuallayersingraphite,hasinitiatedenormousscientific
43activities[1–4].Grapheneisauniquematerial.Itisstrictly2D
44(apartfromasmall,long-rangebuckling[5]),ithasahighcrystal-
45lographicquality,anditisstableunderambientconditions.Ithasa
46veryspecialelectronicstructure,thepandp*bandstouchinasin-
47glepointattheFermienergy(EF)atthecorneroftheBrillouin
48zone,andclosetothisso-calledDiracpointthebandsdisplayalin-
49eardispersion.Thistopologyofthebandsgivesrisetoexoticelec-
50tronictransportproperties–thechargecarriersbehavelike
51relativisticparticles–whichmanifestthemselvesinunusualphe-
52nomenasuchasananomalousquantumHalleffect[6,7].Thebal-
53listicchargecarriertransportat300Kandathighchargecarrier
54concentrationsmakesgraphenealsointerestingforapplications
55inelectronicdevices[4].
56Intheadsorbedformonmetalsurfacesgraphenehasbeen
57knownforatleast40years.Theformationofgraphenewasfirst
58observedduringpreparationofPtandRusinglecrystalsurfaces
59[8–12].Whenduringtheusualpreparationthesampleswere
60annealedtohightemperatures,carbonimpuritiessegregatedfrom61thebulktothesurface.Itwassoonrealizedthatoneformofthis
62surfacecarbonisgraphene[11].Grapheneonmetalsurfacesisalso
63knownfromindustrialheterogeneouscatalysis,where,forreac-
64tionsinvolvinghydrocarbons,thedepositionofgraphiticcarbon
65onthecatalystsurfaceisamajorreasonfordeactivation[13,14].
66Recentinvestigationshaveshownthatthesegraphiticlayerscan
67consistofafewgraphenelayersonly,orevenofmonolayers
68[15].Notsurprisingly,thecurrentboominresearchonfree-stand-
69inggraphenehasledtorenewedinterestingrapheneadsorbedon
70metalsurfaces.Explorationofthesesystemshasmeanwhilebe-
71comeathirdmainfieldofgrapheneresearch,inadditiontoinves-
72tigationsoffree-standinggrapheneandofepitaxialgrapheneon
73SiC.(ThedecompositionofSiCisthesecondmajormethodfor
74graphenepreparation[16–18],apartfromthemechanicalexfolia-
75tionfromgraphite.)
76Inthiscontribution,wegiveanoverviewofresultsformetal–
77graphenesystems.Theavailablepublishedmaterialongraphene
78onmetalshasstronglygrownsincetwopreviousreviewsfrom
791997[19,20],andcurrentlythefieldisdevelopingsorapidlythat
80wecannothopetoprovidemuchmorethanasnapshot.Animpor-
81tantissueinmanyoftheinvestigationshasbeenthequestionof
82howthegraphenelayerinteractswiththemetal,which,ofcourse,
83isthediscriminatingfactorfromisolatedandSiC-supportedgraph-
84ene:Isthegraphenelayerphysisorbed–asonemayexpectfrom
85theveryweakinteractionbetweenthelayersinbulkgraphite–
86orisitboundmorestrongly?Andhowistheelectronicstructure
0039-6028/$-
seefrontmatterÓ2009PublishedbyElsevierB.V.doi:10.1016/j.susc.2008.08.037*Correspondingauthor.Tel.:+4908921807606;
fax:
+49089218079994.E-mailaddress:
wintterlin@cup.uni-muenchen.de
(J.Wintterlin).SurfaceSciencexxx(2009)xxx–xxx
ContentslistsavailableatScienceDirect
SurfaceScience
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ww.elsevier.com/locate/suscSUSC18426No.ofPages12,Model5G
26January2009DiskUsed
Pleasecitethisarticleinpressas:J.Wintterlin,M.-L.Bocquet,Surf.Sci.(2009),doi:10.1016/j.susc.2008.08.037