70 HIPIMS Pulsed DC DC
60
50
Sum of Ar++Ar+++Ti++Ti+++N++N++=100%
Ratio of N+ to N2+ is significantly higher in a HIPIMS discharge than in (pulsed) DC discharge. More reactive N species.
6
Results - Roughness AFM 30x30µm
A70 Arc -70V bias
2D1H75 HIPIMS -75V bias
2D1H95 HIPIMS -95V bias
Significant improvement in surface roughness
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HVPL
3000 2000
E /G P a
No definite trend for E modulus – possible differences due to changes in Microstructure.
1 Arc
2 Arc
1 Spu
2 Spu
3 Spu
Sample
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Discharge Voltage /V
-1500
2000 1800
1400 1200 1000 800 600 400 200 0
-2000 -50
0
50
100
150
200
Time /µs
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4
Discharge Current /A
1600
HIPIMS Plasma composition in ArN2
Sample : polished M2 HSS Target : 50/50 at% AlTi Dep. Temp. : 450-520oC Film thickness : 2-3µm Full load in chamber, Three fold rotation
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700 µs
1
1
2
2
Time
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17
Hipims+ Bias issues
• Provide an additional constant voltage power supply, which can supply the required peak current at the required constant voltage. (Arc handling) • Simple Solution: use capacitor as additional CV-power supply. • Hauzer Patent: electronic switching for a fast interruption of the arc current, capable to handle the current of the capacitor discharge circuit.
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2
Why High power pulse sputtering? Plasma technology with high % of the material to be deposited is ionized. Gaining control over stress - > Control microstructure/texture To create defect free coatings with good adhesion. To make coatings for tool and tribo applications which outperform arc deposited coatings To reduce thermal load of substrate To increase deposition rate of sputtering process
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Overview Presentation Hipims+ by Hauzer Why High Power sputter technology Hipims vs. Hipims+ Coatings: TiAlN, Cr2N Machine integration in Flexicoat®
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9
Results – Hardness and E modulus
HVPL and E
5000 4000 HVPL EIT GPa 700 600 500 400 300 200 1000 0 100 0
Hardness increases with increasing bias or addition of HIPIMS Cathodes.
2D1H75V HIPIMS -75V
2D1H95 HIPIMS -95V
Increase in ion energy (higher bias) with constant ion flux leads to densification of coating Columns coalesce to reduce number of boundaries Resputtering of film evident at growing surface
V
0
t0 1
t1 2
t2 3
t3 4
t4
t5 time
VLP VHP (1)
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VLP/(t1-t0)
(3)
(VHP-VLP)/(t3-t2)
15
Hipims+ Pulse
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16
Hipims+ Pulsing possibilities
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12
Hipims+ Technology
Integrated MPP™ Technology
Modulated Pulse Power - MPP™ High power pulse magnetron sputtering technique Heart of technology is Multi-step DC pulse Voltage rise time control is key to enabling a long, stable, and high power pulse discharge Pulses widths of > 200 µsec up to 1.5 msec HIPIMS+ by Hauzer provides: Control of the gas to metal ion ratio Increased deposition rate (higher than HIPIMS) Improved target utilization
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3
Concept behind HIPIMS Technology
Capacitor discharge Peak pulse powers from kW to MW Low frequency (duty cycle) Pulse energy and voltage can be defined Pulse shape is determined by system configuration Cabling 0 Pressure Discharge Current Discharge Voltage -500 Sputtering atmosphere -1000 Magnetron design
Deposition source configuration 2 DC + 1HIPIMS 2 DC + 1HIPIMS 1 DC + 2 HIPIMS 2 x 4 CARC 2 x 4 CARC
Bias voltage -75V -95V -75V -40V -70V
Experiment overview
L c /N
60 40 20 0 A40 A70 2D1H75 1D2H75
Sample
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11
Conclusions HIPIMS TiAlN
It is possible to create AlTiN coatings by HIPIMS deposition with material properties similar to those deposited by cathodic arc similar hardness and E modulus. HIPIMS deposited coatings show some promising benefits as compared to arc deposited coatings lower roughness HIPIMS etching produces comparable adhesion values as compared to metal ion etching from an arc source – for both Ti and AlTi targets. HIPIMS technology is industrially feasible.
Smooth, very good adhering hard coatings for tool and tribo applications.