Glass Substrate 1100 1250 mm 2
η:8.75% (i), η:7% (s), a-Si
η:10.38 % (i) , :9.45 % (s), 1cm2, aSuS
☺ 40MHz PECVD ☺ Single Chamber for p,i and n layer ☺ HF PECVD for a-Si (in-line ) ☺ 27MHz PECVD for μc-Si (cluster) ☺ Target: G8.5 (Cluster) ☺ 13.56MHz PECVD PVTC MSL
102
10
1
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P.1
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P.2
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P.3
Reserves of Various Energy Sources
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P.4
•
(
)
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P.5
PV Module
Copyright 2013ITRI
P.28
Clean Bench
Rena( ) BOC Edwards ( ) Manz Auto ( ) NTC( )
PVD, LPCVD
Exitech ( ) InnoLas ( ) Manz Auto ( ) EO Technics
PECVD

P10 :ANASYS : ( CFDRC ) RGS
PLC PC
G3.5
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Cluster type
P.33


1. Showerhead 2. 3.

→ →
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P.34
•
Ref: /
Turnkey On-line end point


point

end

On-line

end point On-line

end point On-line




:MES Manufacturing Execution System)
D.R.
3torr 23 6.6% PVD 80nm 4.32% 150nm
5.26Å/sec 4.63% 25 Ag 4.24% 300nm 4.53%
Copyright 2013ITRI
150
P.31
55cm 70cm

Copyright 2013ITRI
P.32
55cm 70cm

Maker User Maker
P.13
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P.14
•
PV產値約 ECFA
135
2
• localize • ) • • 180μm → ( TCO 8GW 150μm → ) PV
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PV PV
(85%) turnkey
CIGS
(
PV GW 2.5
•
P.15


Copyright 2013ITRI
Glass Substrate 1100 1400 mm 2
η:7 % (s), a-Si solar cell only
η:10 % (i) , 5cm 5cm, a-Si cell
η:9.5% (i), 1cm2, a-Si
Glass Substrate 1950 2250 mm 2
•
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P.6
(
)
(
)
LED
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P.7
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P.8 8
Source：Photon Itnl；IEK(2011/04)
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P.9
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P.10
Cell ( (
a-Si a-SiC
) )
a-SiGe
16~22% 10~17% 8~13% ) 18~30% 10~12% 8~12% 7%
14~15% 12~14% 6~9%
III-V II-VI
GaAs( CdS
, CdTe
CuIn(Ga)Se2
TiO2/Dye
Copyright 2013ITRI
MOTOR SNS NS N SNS NSN SN S N SN 33mm 2mm 2mm
10mm (
(880X1120X6t) ) PT (3 )
(550x700x4t)
O-Ring
Heater
(
)
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P.38
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P.39
11
21 32
P
262.9
MOTOR
264.6 265.6 267.1 267.0 260.1 263.04
SNS NSN SNS N SN SNS NSN
N W 5 0
(550x700x4t)
Heater
o Ave. 263.04 5.26 A /sec time 500 max min 278.8 244.5 non uniformity 6.55% max min 278.8 244.5
η:10.2% (i),
1cm2,
aSuS
P.24
(AF)
: 13.56 MHz
(RF) (MW)
40, 60, 80 MHz 0.915 GHz 2.45 GHz
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P.25
/
Aurel( ) ICOS( ) Sinicco ( ) VIVITEK(
( ) RENA ( ) Schmid ( ) ASTEC( ) STANGL( ) BOC Edwards(
(b)
(a)h.a.i.m elektronik( EETS( ) Belval ( ) (b)Manz Auto ( ) (a+b) Berger( ) NPC( ) Wacom( ) Spire( ) Schmid ( ) )
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P.27
EVA Tedlar
PV Module
Si thin film Textured ZnO:B Glass Substrate
p (n-Type)
Source： ITRI / MSRL
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P.47
～
～
Copyright 2013ITRI
P.48


( texture )
LPCVD NhomakorabeaZnO ITO
Aurel( ICOS( Sinicco ( VIVITEK( ) ) ) )) NPC( ) Meier Vakuumtech ( ) Schmid( ) Turn Key:
Copyright 2013ITRI
P.29
B.
C.
高穏定性
55cm 70cm : 1.5m 80.56% (400800nm) 10Ω/sq 5.08% D.
Boundary layer Boundary layer
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Source： ITRI / MSRL
P.52
80.56% (400-800nm) 1.5m 80.56% (400-800nm)
5.08% 5.08% 10Ω/sq
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31
plasma
22 91
11 12
12
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P.40
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P.41
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P.42


(
2m)
SiH4
NH3
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P.43
(MSWP)
(HFSS
)
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P.11

台灣產値約
Clean Bench
PVD,LPCV D
PECVD
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P.12
NT/kWh

18

PV
17

10 8
ITRI

AIST
7 5

2 2002 2007 2010 2020
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2030

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P.20
clean
Saw damage Etching, Texturing n
Diffusion
PSG Oxide Remove
AR-Coating
Printing/ Drying/ Sintering
Separation F/R side
IV-Testing & Sorting
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P.16
•
In
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P.17 17
CdTe 16.5% μc-Si:H 16% a-Si:H 12.1%
CIGS 19.9%
Copyright 2013ITRI