Fig. 4 Non-Repetitive Peak Forward Surge Current (Pulse Mode)
Fig. 5 Power Derating
Fig. 6 Current Derating
09 / 10
SiC Schottky Diode
S2D065V010E
Package TO-252-2L Inner Circuit Product Summary
更高的 电能转换效率
更高的 工作温度
更高的 工作频率
更小的 体积和体重
SiC Schottky Diode
S2D065V010A
Package TO-220-2L Inner Circuit Product Summary
S2D065V010A�
Maximum Ratings
VR IF QC
650 V 12A 10A
(Tc= 135 ℃ ) (Tc= 145 ℃ )
Parameter
Symbol
Test Conditions
TC = 25℃, TP = 10 ms Half Sine Wave
Value
on-Repetitive Peak Forward Surge Current I FSM
Benefits
u u u u u u Higher System Efficiency Parallel Device Convenience High Temperature Application High Frequency Operation Hard Switching & High Reliability Environmental Protection Power Dissipation PD TJ Tstg RΘJC Repetitive Peak Forward Surge Current I FRM
S2D065V010E
Package Dimensions TO-252-2L
Fig. 1 Forward Characteristics
Fig. 2 Reverse Characteristics
Fig. 3 Capacitance vs. Reverse Voltage
Fig. 4 Power Derating
QC
Continuous Forward Current
Total Capacitance
C
V R=200V, TJ=25 ℃ , f =1 MHz V R=400V, TJ=25 ℃ , f =1 MHz
pF
11 / 12
SiC Schottky Diode
S2D065V010E
Device Performances
Non-Repetitive Peak Forward Surge Current I FSM
TC = 125℃, TP = 10 ms Half Sine Wave TC = 25℃, TP = 10 µ s Pulse TC = 25℃, TP = 10 ms
55
A
TBD
A
Features
u u u u u u Low Conduction and Switching Loss Positive Temperature Coefficient on V F Temperature Independent Switching Behavior Fast Reverse Recovery High Surge Current Capability Pb-free lead plating
Symbol
V RRM V RSM VR IF
Test Conditions
TJ = 25℃ TJ = 25℃ TJ = 25℃ TC= 25℃ TC= 135℃ TC= 141℃
Value
650 650 650 24 11 10
Unit
V V V A A A
Reverse Current
IR
Total Capacitive Charge
S2D065V010A
Device Performances
S2D065V010A�
Package Dimensions TO-220-2L
Fig. 1 Forward Characteristics
Fig. 2 Reverse Characteristics
Fig. 3 Capacitance vs. Reverse Voltage
Fig. 5 Current Derating
13 / 14
SiC Schottky Diode
S2D065V010G
Package TO-263-2L Inner Circuit Product Summary
QC
Continuous Forward Current
IF
TC = 135 ℃ TC = 145 ℃
Total Capacitance
C
V R=200V, TJ=25 ℃ , f =1 MHz V R=400V, TJ=25 ℃ , f =1 MHz
pF
07 / 08
SiC Schottky Diode
Half Sine Wave, D = 0.1 TC = 125℃, TP = 10 ms Half Sine Wave, D = 0.1 TC = 25℃ TC = 125℃
33
A
25 79 26 175 -55 to 175 1.9
A W W ℃ ℃ ℃/W
Operating Junction and Storage Temperature Thermal Resistance Junction to Case
Symbol
V RRM V RSM VR
Test Conditions
TJ = 25 ℃ TJ = 25 ℃ TJ = 25 ℃ TC = 25 ℃
Value
650 650 650 26 12 10
Unit
V V V A A A
Reverse Current
IR
Total Capacitive Charge
V DC VF
Test Conditions
I R = 100 µA, TJ = 25 ℃ I F = 10A, TJ = 25 ℃ I F = 10A, TJ = 175 ℃ V R = 600V, TJ = 25 ℃ V R = 600V, TJ = 175 ℃ I F = 10A, dI/dt=300A/µs, V R=400V, TJ=25 ℃ V R=1V, TJ=25 ℃ , f =1 MHz
Typ.
> 650 1.5 1.9 <1 15 19 398 53 52
Max.
1.8 2.2 50 160
Unit
V V V µA µA nC
Maximum Ratings
Forward Voltage
Parameter
Peak Repetitive Reverse Voltage Peak Reverse Surge Voltage DC Blocking Voltage
Half Sine Wave, D = 0.1 TC = 125℃, TP = 10 ms Half Sine Wave, D = 0.1 TC = 25℃ TC = 125℃
51
A
46 88 29 175 -55 to 175 1.7
A W W ℃ ℃ ℃/W
Operating Junction and Storage Temperature Thermal Resistance Junction to Case
VC VF
Test Conditions
I R = 100 µA, TJ = 25 ℃ I F = 10A, TJ = 25 ℃ I F = 10A, TJ = 175 ℃ V R = 600V, TJ = 25 ℃ V R = 600V, TJ = 175 ℃ I F = 10A, dI/dt=300A/µs, V R=400V, TJ=25 ℃ V R=1V, TJ=25 ℃ , f =1 MHz
Applications
u u u SMPS PFC Solar/ Wind Renewable Energy u u u Power Inverters Motor Drives UPS
Electrical Characteristics
Parameter
DC Blocking Voltage
Symbol
Applications
u u u SMPS PFC Solar/ Wind Renewable Energy u u u Power Inverters Motor Drives UPS
Electrical Characteristics
Parameter
DC Blocking Voltage
Symbol
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