The bottom gasket
Label on the Reel 3000×15 PCS 3000×1 PCS
The top gasket Stamp “EMPTY” on the empty box Seal the box with the tape
Seal the box with the tape
Dimensions In Inches Min. Max. 0.035 0.043 0.000 0.004 0.035 0.039 0.008 0.016 0.003 0.006 0.079 0.087 0.045 0.053 0.085 0.096 0.026 TYP. 0.047 0.055 0.021 REF. 0.010 0.018 0° 8°
1. BASE 2. EMITTER 3. COLLECTOR
FEATURES Excellent hFE linearity Complements the 2SC4081 MAXIMUM RATINGS (Ta=25 ℃ unless otherwise noted)
Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value -60 -50 -6 -150 200 150 -55-150 Unit V V V mA mW ℃ ℃
10
1 -0.1
-1
-10
-20
-1
-10
-30
REVERSE BIAS VOLTAGE
V
(V)
COLLECTOR CURRENT
IC
(mA)
250
PC
——
Ta
COLLECTOR POWER DISSIPATION PC (mW)
200
150
100
50
0 0 25 50 75 100 125 150
(mA)
COLLECTOR CURRENT
IC
(mA)
Cob / Cib
50
——
VCB / VEB
(MHz) f=1MHz IE=0 / IC=0 Ta=25℃
1000
fT
——
IC
(pF)
10
CAPACITANCE
Cib
TRANSITION FREQUENCY
C
fT
100
Cob
VCE=-12V Ta=25℃
CLASSIFICATION OF hFE Rank Range Marking Q 120-270 FQ R 180-390 FR S 270-560 FS
A,May,2011
Typical Characteristics
-7
2SA1576A
hFE —— IC
Ta=100℃
Static Characteristic
-20uA -18uA -16uA -14uA COMMON EMITTER Ta=25℃ hFE DC CURRENT GAIN1000(mA)
-6
IC
-5
COLLECTOR CURRENT
Ta=25℃
100
-4
-12uA -10uA
-3
-8uA
-2
-6uA -4uA
-1
IB=-2uA
-0 -0 -2 -4 -6 -8 -10 -12 10 -1 -10
QA Label
Label on the Inner Box Inner Box: 210mm×208mm×２０３mm
Label on the Outer Box Outer Box: 440mm×440mm×230mm
COMMON EMITTER VCE= -6V
-100 -150
COLLECTOR-EMITTER VOLTAGE
VCE
(V)
COLLECTOR CURRENT
IC
(mA)
-300
VCEsat ——
IC
β=10
VBEsat ——
-1000
IC
β=10
COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV)
BASE-EMITTER SATURATION VOLTAGE VBEsat (mV)
-800
-200
Ta=25℃
-600
Ta=100℃
-100
Ta=100℃
Ta=25℃
-400
-0 -1 -10 -100 -150
-200 -0.1
-1
-10
-100 -150
COLLECTOR CURRENT
IC
AMBIENT TEMPERATURE
Ta
(℃ )
A,May,2011
【 南京南山半导体有限公司 — 长电三极管选型资料】

Symbol A A1 A2 b c D E E1 e e1 L L1 θ
Dimensions In Millimeters Min. Max. 0.900 1.100 0.000 0.100 0.900 1.000 0.200 0.400 0.080 0.150 2.000 2.200 1.150 1.350 2.150 2.450 0.650 TYP. 1.200 1.400 0.525 REF. 0.260 0.460 0° 8°
ELECTRICAL CHARACTERISTICS (Ta=25 ℃ unless otherwise specified)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) fT Cob Test conditions IC=-50μA,IE=0 IC=-1mA,IB=0 IE=-50μA,IC=0 VCB=-60V,IE=0 VEB=-6V,IC=0 VCE=-6V,IC=-1mA IC=-50mA,IB=-5mA VCE=-12V,IC=-2mA,f=30MHz VCB=-12V,IE=0,f=1MHz 140 4 5 120 Min -60 -50 -6 -0.1 -0.1 560 -0.5 V MHz pF Typ Max Unit V V V μA μA
【 南京南山半导体有限公司 — 长电三极管选型资料】

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-323 Plastic-Encapsulate Transistors
SOT-323
2SA1576A
TRANSISTOR (PNP)