MOSFET Basic Operation
VGS VTh
inversion layer
VDS > 0
S G +
ID 0
40 40
30 30
N
N+
20 20
P
ID [A]
10 10
0
0 0
10
10 VDS [V]
20
20
30
30
D
+
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Development and Characterization Activities
Datasheet Reliability ..
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Main Electrical Parameters
BVdss VGS(th) Igss Idss VDSon RDSon Vsd DVSD UIS UID Bltage Gate Source leakage Current Drain Source leakage Current Drain Source On Voltage Drain Source On Resistence Reverse Diode Voltage Delta Vsd Unclamped Inductive Switching Unclamped Inductive Discharge
Note: This parameter is a function of the resistivity and thickness of the N- Epi layer. The value is directly proportional to Junction Temperature as shown after.
D
Id
Ids
Id2=1mA
BV2>BV1
G
Id1=250mA Vds
1 2
S
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Threshold Voltage [Vgs(th)]
Gate Threshold Voltage: Measurement conditions: VGS(th) [V] Vgd=0[V], Id=250[mA] / Id=1[mA]

MOSFET Basic Operation
1000
RON AREA [mW cm2 ]
100
10
1
0.1 10
BVDSS [ V ]
100
1000
10000

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MOSFET’s Capacitances
D
Cgd Cds G Cgs S
Ciss = CGD + CGS Coss = CDS + CGD Crss = CGD Input Capacitance Output Capacitance Miller Capacitance
SMPS: AC to DC, PFC, Adapters Power Management (including those for electronic games)
Lighting: CFL, HF Ballast, PFC
High frequency DC to DC Converter for computer
MOSFET Division
Technical Training
7th April 2005
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AGENDA
MOSFET Technical Training

MOSFET Basic Information


Main Electrical Parameters
Battery Chargers
Automotive
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AGENDA
MOSFET Technical Training

MOSFET Basic Information


Main Electrical Parameters
Production (Assy & Testing) Flow Chart
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Drain-Source Breakdown Voltage [BVdss]
Drain-Source Breakdown Voltage: Measurement conditions: BVDSS [V] Vgs=0 [V], Id=250[mA] / Id=1[mA]
Vertically oriented four layer structure (n+ p n- n+) High input impedance- voltage controlled device- easy to drive Unipolar device- majority carrier device- fast switching speed Wide SOA
S
G
D
P+
NN+
G
S
D
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MOS Parassitic Elements: C, Rp
S G D
P+
NN+
G
C Rp
S
D
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MOS Parassitic Elements: JFET
D S G
S
G
D
G
P+
NN+ D
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S

MOS Parassitic Elements: Body Diode
S
G D G P+ N-
P+
NN+
S D
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MOS Parassitic Elements: BJT
MOSFET Basic Operation
VGS > VTh
VDS > 0
S G +
ID > 0
40 40
On state resistance RON
30 30
Increasing VG 20 20
ID [A]
10 10
0
0 0
10
10 VDS [V]
20
20
30
30
D
+
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P/N Nomenclature for MOSFET Devices

ST
P 70 N F 03 L
Special Features
Package TYPE
C = TSSOP8 T = SOT23-6L N = SOT-223 L = PowerFLAT SJ = PowerSO-8 SR= PowerSO-8 Reverse S = SO-8 D…T4 = DPAK (Tape & Reel) B…T4 = D2PAK (Tape & Reel) V = PowerSO-10 Q = TO-92 D…-1 = IPAK B…-1 = I2PAK P = TO-220 P…FP = TO-220FP F = TO-220FP for new products W = TO-247 Y = Max247 E = ISOTOP with the exception of: • 55V and 75V • TSSOP8, SOT23-6L, SO-8
Indicative Current Range
E = EHD1 (STripFET 1st generation) F = EHD2 (STripFET 2nd generation) H = EHD3 (STripFET 3rd generation) FS = EHD2 +Schottky Diode S = PowerMESH Medium Volt B = PowerMESH I C = PowerMESH II C…Z = PowerMESH III Channel Polarity K…Z = SuperMESH M = MDmesh N = N-Channel M…N = MDmesh II P = P-Channel DN or DP = Dual N-Ch or Dual P-Ch C = Complementray Pair
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High Voltage MOSFET


Power MESH II – “NC” Series Competitive standard MOSFETs Cost effective High volume production Power MESH III – “NC-Z” Series Very high voltage market ZENER Diode: added value at no costs SuperMesh - New “NK-Z” Series High volume markets (cost competitiveness) Even better Rdson* Qg and very good ruggedness MDmesh - “NM” Series High-End applications Evolving as “future” high voltage leading technology