IC= -100μA, IE=0 IC = -0.1mA, IB=0 IE=-100μA, IC=0 VCB=-50 V, IE=0 VEB= -5V, IC=0 VCE=-5V, IC= -1mA IC=-100mA, IB= -10mA IC=-100mA, IB=-10mA VCE=-5V, IC= -10mA
μA μA
Transition frequency freque
fT
f=30MHz
150
MHz
CLASSIFICATION OF hFE CLASSIFIC Rank Range
L 200-450
H 450-1000
Typical Characteristics
S9015
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD CHANGJI ELE FUYAT CO.，LTD 86本资料由东莞长电代理：FUYAT CO. LTD LTD提供86-769-85388861 86-769-85388861
SOT-23 Plastic-Encapsulate Transistors SOT Plastic-Encap
1. BASE 2. EMITTER 3. COLLECTOR
Value -50 -45 -5 -0.1 0.2 150 -55-150
Units Unit V V V A W ℃ ℃
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) CHARA RACTERISTICS amb=25℃ her
S9015
SOT-23 SOT TRANSISTOR (PNP)
Hale Waihona Puke FEATURES FEA z Complementary to S9014 Complement S901 MARKING: M6 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) =25 other
Parameter Collector-base breakdown voltage breakdo Collector-emitter breakdown voltage brea kdo olt Emitter-base breakdown voltage Emitter-bas breakdo Collector cut-off current Emitter cut-off current DC current gain curr Collector-emitter saturation voltage Collector satur Base-emitter saturation voltage Bas -emitte satu ratio Symbol bol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) VBE(sat) Test est conditions cond itio MIN -50 -45 -5 -0.1 -0.1 200 1000 -0.3 -1 V V TYP MAX UNIT V V V
Symbol VCBO VCEO VEBO IC PC Tj Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Parameter Para mete