[材料科学] 半导体材料英文缩略语材料科学2008-03-24 16:18:46 阅读37 评论0 字号：大中小订阅援引：MEMC Electronic Materials, Inc.A. -- AngstromA-defects -- Dislocation loops in Silicon formed by agglomeration of interstitialsAA -- Atomic absorptionAE -- Acid EtchAFM -- Atomic Force MicroscopyALCVD -- Atomic Layer Chemical Vapor DepositionAMC -- Barrel or batch type Epi reactor (Applied Materials)APCVD -- Atmospheric-Pressure Chemical Vapor Deposition Furnace ASIC -- Application Specific Integrated CircuitASM -- a single-chamber Epi reactor (ASM America)ASTM -- American Standard Test MethodASTM -- American Society for Testing and MaterialsBBESOI -- Bonded and Etch Back SOIBGSOI -- Bonded and Grind Back SOIBJT -- Bipolar Junction TransistorBMD -- Bulk Micro-Defects or Bulk Microdefect Density (used almost exclusivelyas a measure of the oxygen precipitate density)BOE -- Buffered Oxide EtchBOX -- Buried Oxide LayerBP -- Backside PolishBV -- Breakdown VoltageBvox -- Breakdown Voltage-oxideC°C -- Centigrade°C/min -- Centigrade per minuteCD -- Critical DimensionCE -- Caustic Etchcm -- Centimeter (0.01 meter)CMOS -- Complementary Metal Oxide SemiconductorCMP -- Chemical Mechanical PolishingCO -- Carbon MonoxideCO2 -- Carbon DioxideCOO -- Cost of OwnershipCOP’s -- Crystal Originated ParticlesCoQC -- Certificate Of Quality ConformanceCP -- Crystal PullerCV -- Capacity or capacitance voltageCVD -- Chemical Vapor DepositionCZ -- Czochralski method of pulling single crystalDD-defects -- Very small voids in Silicon formed by agglomeration of vacanciesDIBL -- Drain Induced Barrier LoweringDIC -- Differential Interference ContrastDL -- Diffusion LengthDMOS -- Double-diffused MOSDOE -- Design of ExperimentsDOF -- Depth of FocusDRAM -- Dynamic Random Access MemoryDSOD – Direct Surface Oxide DefectDSP -- Double Sided PolishDZ -- Denuded Zone (depth measured from the surface that is free of oxygenprecipitates and which is denuded of interstitial oxygen (byout-diffusion))EeDRAM -- Embedded Dynamic Random Access MemoryEG -- Enhanced GetteringEEPROM -- Electrically-erasable and Programmable Read-only MemoryEPROM -- Erasable and Programmable Read-only MemoryEOT -- Equivalent Oxide ThicknessEPI -- EpitaxyESF -- Epi Stacking FaultFFBE -- Floating Body EffectFET -- Field Effect TransistorFD-SOI -- Fully Depleted Silicon-on-InsulatorFPD -- Flow Pattern Defect (ref. Crystal)FPD -- Focal Plane Deviation (ref. Mechanical flatness)FRAM -- Ferroelectric Random Access MemoryFTIR -- Fourier Transform Infra-Red SpectroscopyFZ -- Float Zone method of Crystal PullingGGBIR -- Global flatness, back-referenced GeOI -- Germanium-on-InsulatorGFA -- Gas Fusion AnalysisGOI -- Gate Oxide IntegrityGTIR -- Global Total Indicated Reading GUI -- Graphical User InterfaceHH2 -- Hydrogen gasH2O2 -- Hydrogen PeroxideHCl -- Hydrogen ChlorideHF -- Hydrofluoric AcidHMOS -- High-performance MOSHZ -- Hot ZoneIIC -- Integrated CircuitsIDM -- Integrated Device ManufacturerIG -- Internal GetteringIGBT -- Insulated Gate Bipolar Transistor IQC -- Incoming Quality ControlISO -- International Standards Organization ITOX -- Internal OxidationJFET -- Junction Field Effect TransistorKkg -- KilogramkN -- Kilo NewtonKOH -- Potassium HydroxidekP -- Kilo PascalKSIE -- Thousand Square Inch EquivalentLLAD -- Large Area DefectLg -- Transistor Gate LengthLLS -- Localized Light ScatterersLLPD’s -- Large Light Point DefectsLPCVD -- Low Pressure Chemical Vapor DepositionLPD’s -- Light Point DefectsLPD-E -- Light Point Defect, class E (a KLA-Tencor SP1 defect class) LPD-N -- Light Point Defect, class N (a KLA-Tencor SP1 defect class) LPD-S -- Light Point Defect, class S (a KLA-Tencor SP1 defect class) LPE -- Liquid Phase EpitaxyLSE -- Latex Sphere Equivalent particle sizeLSI -- Large-scale IntegrationLSTD -- Laser Scattering Tomographic DetectionLTO -- Low Temperature OxideM9K -- MEMC proprietary polishing machineMBE -- Molecular Beam EpitaxyMDZ -- Magic Denuded Zone (gettering)MEMS -- Micro-ElectroMechanical SystemMIM -- Metal-Insulator-MetalMLD -- Modified Low Dosemm -- 1/1000 of a meter and 0.03937 inchmm/min -- millimeters per minuteMNOS -- Metal Nitride Oxide SemiconductorMOCVD -- MetalOrganic Chemical Vapor Deposition MODFET -- Modulation-Doped Field Effect TransistorMOS -- Metal Oxide SemiconductorMOSFET -- Metal Oxide Semiconductor Field Effect Transistor MRAM -- Magnetoresistive Random Access MemoryMSI -- Medium-scale IntegrationMSIE -- Million Square Inch EquivalentNN -- Silicon doped to create excess negative charge carriers (electrons)N+ -- Heavily doped, N-type siliconNT -- NanotopographyN2 -- Nitrogen gasnm -- nanometersNMOS -- N-channel Metal Oxide SemiconductorNPT -- Non-Punch ThroughO2 -- OxygenOi -- Interstitial OxygenOISF -- Oxidation-Induced Stacking FaultOPP -- Optical Precipitate ProfilerOUM -- Ovonics Unified MemoryPP -- Silicon doped to create excess positive charge carriers (holes)P- -- Lightly doped P-type silicon waferP+ -- Heavily doped P-type silicon waferP/P+ -- Lightly doped P-type epi layer on a heavily doped P-type substrateP/P- -- Lightly doped P-type epi layer on a lightly doped P-type substrateP-band -- Anomalous oxygen precipitation region in vicinity of the vacancy/interstitial boundaryPD-SOI -- Partially Depleted Silicon-on-InsulatorPECVD -- Plasma Enhanced Chemical Vapor Deposition Furnace PFRAM -- Polymeric Ferroelectric Random Access MemoryPFZ -- Precipitate Free Zone (depth measured from the surface that is free ofoxygen precipitates but not necessarily depleted in interstitial oxygen) PMOS -- P-channel Metal Oxide SemiconductorPPB -- Parts Per BillionPPC -- Post Polish CleanPPE -- Personal Protective EquipmentPPM -- Parts Per MillionPPMA -- Parts Per Million AtomicPPMD -- Parts Per Million DefectivePPT -- Parts Per TrillionPROM -- Programmable Read-only MemoryPT -- Punch ThroughP/V -- Peak to Valley measurementPZT -- Lead Zirconate TitanateQRRAM -- Random Access MemoryRF -- Radio FrequencyRFCMOS -- Radio-Frequency Complementary Metal Oxide SemiconductorROM -- Read-only MemoryRSD -- Raised Source/DrainRTA -- Rapid Thermal AnnealRTP -- Rapid Thermal ProcessSSAC -- Submicron Application CrystalSBIR -- Site flatness, back-referencedSBSD -- Soft Backside DamageSC1 -- 1st cleaning bath in the standard “RCA clean” sequence, consisting ofNH4OH / H202/ H20 solution designed to remove particles from Si surfaceSC2 –2nd cleaning bath in the standard “RCA clean” sequence, consisting ofHCl / H202/ H20 solution designed to remove metals from Si surfaceSCE -- Short Channel EffectsSEM -- Scanning Electron MicroscopeSFQR -- Site flatness, best-fit, front-referencedSFSR -- Site flatness, best-fit, front-referenced, scanning siteSGOI – Strained Si on SiGe on InsulatorSi -- SiliconSIE -- Square Inch EquivalentSIMOX -- Separation by Implantation of OxygenSIMS -- Secondary Ion Mass SpectroscopySiO -- Silicon MonoxideSiO2 -- Silicon DioxideSIP -- Single In-line PackageSIRM -- Scanning Infra-red MicroscopeSoC -- System-on-a-ChipSOI -- Silicon-on-InsulatorSOS -- Silicon-on-SapphireSPT -- Soft Punch ThroughSPV -- Surface PhotovoltageSRAM -- Static Random Access MemorySRP -- Spreading Resistance Probe or Spreading Resistance Profile SSI -- Small-scale IntegrationsSi -- Strained SiliconSSIS -- Surface Scanning Inspection SystemSSOI -- Strained Silicon directly on InsulatorSSP -- Single Side PolishSTD -- StandardSTD CZ -- Standard Czochralski-grown CrystalSTI -- Shallow Trench IsolationSTIR -- Site TIR (Total Indicated Reading)TT -- TemperatureTCS -- TrichlorosilaneTEM -- Transmission Electron MicroscopeTIR -- Total Indicated ReadingTOX -- Gate Oxide ThicknessTsoi -- Thickness of SOI top Si layerTSOP -- Thin Small Outline PackageTTV -- Total Thickness VariationUULSI -- Ultra Large-scale IntegrationVv/G -- v: growth rate (crystal pulling rate), G: vertical temperature gradient atmelt/solid interfaceVI -- Vacancy InterstitialVLSI -- Very Large-scale IntegrationVPE -- Vapor Phase EpitaxyWWRFTIR -- Whole Rod Fourier Transform Infra-Red Spectroscopy XXTL -- CrystalZZD -- Zero Dislocation。