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ELECTRICAL CHARACTERISTICS
Ta=25℃ unless otherwise specified
Maximum Zener Impedance (Note 3) Maximum Reverse Current IZK mA 480 400 150 80 80 80 100 150 150 150 170 200 200 225 225 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 IR μA 2 1 3 2 1 0.7 0.5 0.2 0.1 0.1 0.1 0.1 0.1 0.1 0.1 VR V 2.0 2.0 4.0 4.0 5.0 5.0 6.0 7.0 8.0 8.0 8.0 10.5 11.2 12.6 14.0 Typical Temperature Coefficent @IZTC mV/°C Min -2.7 -2.0 0.4 1.2 2.5 3.2 3.8 4.5 5.4 6.0 7.0 9.2 10.4 12.4 14.4 Max 1.2 2.5 3.7 4.5 5.3 6.2 7.0 8.0 9.0 10.0 11.0 13.0 14.0 16.0 18.0 mA 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 Test Current IZTC
PD =350mW IZ, ZENER CURRENT (mA)
Pulsed
θVZ, TEMPERATURE COEFFICIENT (mV/℃)
Ta =25℃
15
10
VZ @ IZT
10
5.1
9.1
11
6.26.85.6源自7.5 8.212
13
10
15
16
18
20
5
1
0.5
0 4 6 8 10 12 14 16 18 20 22 4 6 8 10 12 14 16 18 20 22
Dimensions In Inches Max Min 0.041 0.049 0.000 0.004 0.041 0.045 0.018 0.026 0.003 0.006 0.059 0.067 0.102 0.110 0.140 0.152 0.020 REF 0.010 0.018 0° 8°
(℃ )

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SOD-123 Package Outline Dimensions
Symbol A A1 A2 b c D E E1 L L1 θ
Dimensions In Millimeters Min Max 1.050 1.250 0.000 0.100 1.050 1.150 0.450 0.650 0.080 0.150 1.500 1.700 2.600 2.800 3.550 3.850 0.500 REF 0.250 0.450 0° 8°
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-123 Plastic-Encapsulate Diodes
BZT52B5V1-BZT52B20
FEATURE
z
z
ZENER DIODE
SOD-123
Planar Die Construction 350mW Power Dissipation on Ceramic PCB General Purpose, Medium Current Ideally Suited for Automated Assembly Processes Available in Lead Free Version
SOD-123 Suggested Pad Layout

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SOD-123 Tape and Reel

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Type Number
Type Code
Zener Voltage Range (Note 2)
VZ@IZT Nom(V) BZT52B5V1 BZT52B5V6 BZT52B6V2 BZT52B6V8 BZT52B7V5 BZT52B8V2 BZT52B9V1 BZT52B10 BZT52B11 BZT52B12 BZT52B13 BZT52B15 BZT52B16 BZT52B18 BZT52B20 2W8 2W9 2WA 2WB 2WC 2WD 2WE 2WF 2WG 2WH 2WI 2WJ 2WK 2WL 2WM 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 Min(V) 5.00 5.49 6.08 6.66 7.35 8.04 8.92 9.80 10.78 11.76 12.74 14.70 15.68 17.64 19.60 Max(V) 5.20 5.71 6.32 6.94 7.65 8.36 9.28 10.20 11.22 12.24 13.26 15.30 16.32 18.36 20.40
22
IZ(AC)=0.1IZ(DC)
350
300
250
200
150
10
IZ=5mA
100
IZ=1mA
1 4 6 8 10 12 14 16 18 20
50
0 0 25 50 75 100 125 150
VZ, NOMINAL ZENER VOLTAGE (V)
AMBIENT TEMPERATURE
Ta

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Typical Characteristics
Zener Characteristics(VZ 5.1V to 20 V)
100 20
Temperature Coefficients
TYPICAL Ta VALUES FOR BZT52BXXX SERIES
IZT mA 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5
ZZT@IZT Ω 60 40 10 15 15 15 15 20 20 25 30 30 40 45 55
ZZK@IZK
Notes: 1. Device mounted on ceramic PCB:7.6mm x 9.4mm x 0.87mm with pad areas 25mm2 2. Short duration test pulse used to minimize self-heating effect 3. f = 1kHz
VZ, ZENER VOLTAGE (V)
VZ, NOMINAL ZENER VOLTAGE (V)
0.1
Typical Leakage Current
Pulsed
Typical Capacitance
1000
Ta=25℃ f=1MHz
IR, LEAKAGE CURRENT (uA)
C, CAPACITANCE (pF)
0.01
100
0V BIAS 1V BIAS
Ta=100℃
1E-3
10
BIAS AT 50% OF VZ NOM
Ta=25℃
1E-4 4 6 8 10 12 14 16 18 20 22
1 4 6 8 10 12 14 16 18 20 22
VZ, NOMINAL ZENER VOLTAGE (V)
z
z
z
Maximum Ratings(Ta=25 ℃ unless otherwise specified)
Characteristic Forward Voltage (Note 2) Power Dissipation(Note 1) Thermal Resistance from Junction to Ambient Junction Temperature Storage Temperature Range @ IF = 10mA Symbol VF Pd RθJA Tj Tstg Value 0.9 350 357 150 -55 ~ +150 Unit V mW ℃/W ℃ ℃
VZ, NOMINAL ZENER VOLTAGE (V)
Effect of Zener Voltage on Zener Impedance
1000 400
Power Derating Curve
Ta=25℃ f=1kHz
100
ZZT Ω) , DYNAMIC IMPEDANCE(
(mW) PD POWER DISSIPATION