Atom or ion 原子或离子
Vaporization of the target material in the arc root (= cathode spot) 在电弧电源（阴极点) 上靶材材料蒸发
Melt flows to the side, droplets almost all
emitted at angles of < 45°溶液向侧面 流动，形成液滴， 向两边呈45。C角
Target靶材 (e.g. Ti)
Anode阳极 / Chamber wall设备壁
-+
Typ. 200A / 30V
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2. Arc Ion Plating (AIP) - Electric arc on a coating target 电弧镀 － 涂层靶材上的电弧
(“Cathode root”, “Spot”) 靶材表面的微观区域放电蒸发（ “阴极电源”，“斑点”
+
+ -+ +++
-
-
பைடு நூலகம்
+ +
+ ++
+
-
+
--
Arc
2. The arc moves about, eroding the target in the process 在电弧的运动过程中，侵蚀靶材
3. The ionized target constituents are accelerated by a bias voltage on the substrate 离子化的靶材成分通过偏压加速 在基体上的运动
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1. Ion Plating - Plasma beam vaporization 离子镀 － 等离子束蒸发
Argon氩
Argon氩
Work-
piece 工件
-
-+ + -
-
Electron-beam source 电子束源
• Disadvantages 劣势 – Droplets from target material are deposited at the same time 同时有靶材材 料的液滴沉积
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2. Arc Ion Plating (AIP) - Droplet creation 电弧镀 － 液滴形成
+-
Substrate bias 基础偏压
+-
+-
+++ -
--
+++
Coating material 涂层材料
(e.g. Ti)
Principle 原理
1. Electron beam heats the material to be
vaporized. The beam is guided by magnets (similar to TV tubes) 电子束打到被蒸发材料上。电子束是被 磁体引导的（与电视电子管相似）
2. Arc Ion Plating (AIP) – Principle 电弧镀 － 原理
Substrate bias基础偏压
-+
Principle原理
1. An arc discharge vaporizes
Substrate 基体 Ti coating 钛涂层
Chamber wall 设备壁
microscopic areas of the target.
巴尔查斯技术)
2. Arc Ion Plating电弧镀 (AIP)
Electric arc电弧
50 % > 90 %
3.
Magnetron Sputtering 磁控溅射(MSIP)
Mechanical机械的
5 - 10%
Very smooth coatings, especially suitable for
1
Arc 电弧
2
Melt 熔液
Target = cathode 靶材＝阴极
Difficult to avoid in arc ion Plating 电弧镀
很难避免
Vapor bubble bursts
3
Releasing vapor particles
4
蒸发气泡破裂，蒸发离子释放
(atoms, ions原子，离子)
Droplets flight direction 液滴，形成方向 Droplets 液滴
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3. Magnetron Sputtering (MSIP) – Principle 磁控溅射 － 原理
Substrate bias基础偏压
Introduction of PVD coating technology PVD 涂层工艺介绍
The coating formation consists of three main phases 涂层形成的三个主要阶段
Energy 能源
1.
Vaporization蒸发
Working gas inflow 工作气体流入
4. Non-conducting materials are sputtered using RF (13.5MHz) or MF (20-200kHz). 绝缘的材料通过RF (13.5MHz) 或 MF (20-200kHz)被溅射。
3. Magnetron Sputtering (MSIP) - Influence of the magnetic field 磁控溅射 － 磁性区的影响
2. Vaporization and transport are facilitated by the vacuum 蒸发和离子运动都在真空环境中进行
3. Vapor condenses on the substrate 基体表面蒸发凝结
Typical values典型数值
Electron source
Reactive gas 反 应气体 N2
Work pieces 工件 450 - 500°C (negative voltage
负电压)
Vacuum pump 真空泵
Crucible坩埚 Coating material 涂层材料,
(positive voltage 正
e.g. Ti 例如，钛
电压)
Technique 技术
Coating material
vaporization 涂层材 料，蒸发
Ionization efficiency 离子化率
Key properties 主要特征
Ion Plating
1.
离子电镀 (Balzers technique
Plasma等离子 / Electron beam电子束
Principle原理:
1. Titanium is thermally vaporized and ionized by an electron beam (200A)钛被热 蒸发，并被电子束离子化 （ 200A)
2. The substrates are held at a negative voltage to attract the ions 基体被固定在负电 压上以吸引离子
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1. Ion Plating - Electron beam vaporization, principle 离子镀 － 电子束蒸发，原理
Chamber wall 设备壁
Substrate 基体 Ti coating 钛涂层
• Advantages优势 – High vaporization rates (rapid coating) 高蒸发率（快速涂层） – High ionization 高离子化率 – Relatively insensitive to soiling 对污渍反应相对迟钝 – Stable processes 工艺稳定
Three main PVD coating techniques have been established in the market 市场上的三种主要的PVD涂层技术
The coating techniques are mainly characterized by the type of vaporization 涂层技术分类主要依据蒸发方式不同而分
-+
Atoms原子
3.
Condensation 凝结
Bias偏压
Molecules 分子
-+
++
Cold
-
Radicals 原子团
plasma 冷等离子体 Reactive gas
Inflow 反应气体流入
-
B基aT体soe材mo料laterial
(substrate)
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plastics processing 很光滑，特别适合塑料处
理工艺
Rough coating, high hardness, high
adhesion 粗糙，高硬度，高结