PW2307
Fig.9 Normalized Maximum Transient Thermal Impedance
Fig.10 Switching Time Waveform
Fig.11 Gate Charge Waveform
PW2307_1.1
无锡平芯微
4
Wuxi PWChip Semi Technology CO., LTD
Fig.4 Gate-Charge Characteristics
1.8 1.4 1.0 0.6
0
50
100
150
TJ , Junction Temperature (℃ ) Fig.6 Normalized RDSON vs. TJ
PW2307_1.1
无锡平芯微
3
Wuxi PWChip Semi Technology CO., LTD
0.104
0.116
0.037(BSC)
0.071
0.079
0.012
0.024
0°
8°
PW2307_1.1
无锡平芯微
5
1.500
1.700
2.650
2.950
0.950(BSC)
1.800
2.000
0.300
0.600
0°
8°
Dimensions In Inches
Min.
Max.
0.041
0.049
0.000
0.004
0.041
0.045
0.012
0.020
0.004
0.008
0.111
0.119
0.059
0.067
Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ RθJA RθJAC
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ -4.5V1 Continuous Drain Current, VGS @ -4.5V1 Pulsed Drain Current2 Total Power Dissipation3 Storage Temperature Range Operating Junction Temperature Range Thermal Resistance Junction-Ambient 1 Thermal Resistance Junction-Case 1 (t ≤10s)
PW2307
40 ID=-4 A
30
20
10
1
2
3
4
5
-VGS (V)
0.2 0.F2ig.2 On-Resistance vs. Gate-Source
-
0
50
100
150
-50
TJ ,Junction Temperature ( ℃ ) Fig.5 Normalized VGS(th) vs. TJ
PACKAGE DESCRIPTION
PW2307
Symbol
A A1 A2 b c D E1 E e e1 L θ
Dimensions In Millimeters
Min.
Max.
1.050
1.250
0.000
0.100
1.050
1.150
0.300
0.500
0.100
0.200
2.820
3.020
Rating -20 ±12 -7.1 -4.8 -23.8
1 -55 to 150 -55 to 150
125 80
Units V V A A A W ℃ ℃ ℃/W ℃/W
PW2307_1.1
无锡平芯微
1Hale Waihona Puke 无锡平芯微Wuxi PWChip Semi Technology CO., LTD
Typical Characteristics
Wuxi PWChip Semi Technology CO., LTD
PW2307
代理 深圳夸克微科技
P-Channel Enhancement Mode MOSFET
GENERAL DESCRIPTION
The PW2307 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application.
FEATURES
VDS = -20V ID =-7A RDS(ON) < 20mΩ @ VGS=-4.5V Available in a 3-Pin SOT23-3 Package
SOT-23-3L (TOP VIEW)
D
S
G
D
G
S
Absolute Maximum Ratings (TA=25℃ unless otherwise noted)