High acceleration voltage (100kV) electron-beam lithography on ultra-thin silicon nitride substrate provide the excellent tool in determining the intrinsic resolution of the novel chemically amplified resists. Novel EUV resist shows the inherent resolution in patterning 30 nm half pitch line/sapce array with low CD variation and LER.
Patterns on nitride membrane
20 um
3.5nm gap
Film thickness: 75nm Shot pitch: 10nm Current: 2nA; Dose: 120 uC/cm2
30 nm half pitch pattern on novel EUV resist
8/16/06 4
Chemically Amplified Resist for Nanoscale Patterns
Researcher: Cheng-Tsung Lee, Cliff Henderson
Georgia Tech Chemical and Biological Engineering
1.0 0.5
M/MS
20 um
0.0 -0.5
3.5nm gap
Top lead
-1.0 -4 -3 -2 -1 0 1 2 3 4
H (kOe)
Ta(2.5)/Cr(5)/CoPt(5)/CoFe(0.7)/Cu(2.5)/CoFe(1)/NiFe(3)/Ta(5)
5
Bottom lead
4
field increase field decrease Rinit = 6.74158
JEOL JBX-9300FS Electron Beam Lithography System
Georgia Tech Microelectronics Research Center
Enabling Nanotechnology
8/16/06 1
Nanoimprint Embossing Stamps
Biomedical Engineering, Georgia Tech
pattern
protein
EBL + metal lift-off
adhesive protein
500 nm
protein resistant group Au PR Si
250 nm 5 mm
E-beam Lithography is used to produce patterned arrays presenting adhesive protein islands within nonfouling background to analyze cell adhesion.
8/16/06
9
Nanometer Gaps
Researcher: Raghunath Murali, Farhana Zaman
Georgia Tech Microelectronics Research Center
20 um
3.5nm gap
13.2 nm gap
• • •
Si substrate, Resist : 47 nm thick PMMA E-beam lithography with 2 nA current, 100 kV acc. voltage Metal liftoff process with 5 nm Cr adhesion layer and 10 nm Au 10
8/16/06 8
Optical Diffractive Element
Researcher: Anonymous External Customer, Devin Brown
Georgia Tech
70nm diameter holes in 80nm Aluminum on quartz substrate using lift-off technique.
8/16/06 7
SOI Photonic Crystals
Researcher: John Blair*, Stephen Ralph**
*Georgia Tech Material Science, **Electrical Engineering
Resonant cavity photonic crystal pattern that resonate at 1.55um wavelength, infra-red.
An array of these nanoscale resonators form a high-speed parallel-processing spectrum analyzer for signals in the 100's to 1000's of MHz. A two-step hybrid lithographic approach allowed the large features of the device, including anchors, RF waveguides, and electrodes to be patterned using traditional optical lithography after the micron, submicron, and nanoscale features were patterned using Georgia Tech's JEOL EBL system. The device was formed in a thin silicon film sputtered on top of a thin silicon dioxide film that served as a release layer during a standard HF oxide etch. Patterning was accomplished through first exposing a PMMA electron beam resist and subsequently transferring that pattern to a thin chrome layer used as a mask for transferring the pattern to the device silicon.
develop
resist strip
resist strip
11nm
8/16/06
80nm line 70nm space
30nm diameter
150nm line
80nm line 2
Nanopatterned Protein Arrays
Graduate Student: Sean Coyer, PI: Andres Garcia
NIL
20 um
spin coat
Silicon substrate
3.5nm gap
e-
PMMA resist oxide
e-
e-
e-
e-
7nm
silicon etch imprint
Silicon substrate
10 MINUTES!! / REUSABLE
exposure
10 HOURS!!
Researcher: Andrew Ballinger*, Devin Brown**
*University of North Texas, **Georgia Tech Microelectronics Research Center
EBL
HSQ resist
Plasma Etch
resist trim stamp
Байду номын сангаас
8/16/06
Nanoresonator
Researcher: John Perng, Farrokh Ayazi
Georgia Tech Electrical Engineering
37nm-wide electrode gap capacitive block resonator
• High frequency MEMS resonator are used in many different applications, such as RF oscillator, on-chip frequency reference, biosensor, etc. • Capacitive-based resonator requires small electrode gap to increase signal to noise ratio and to lower motional impedance • The goal of this project is to characterize the limit of nano trench etching in Si (10nm-wide, max depth?) and produce working device with sub-100nm gap 8/16/06 11
5

8/16/06
CPP-GMR spin valves
Researcher: Cristian Papusoi, Su Gupta
University of Alabama at Tuscaloosa