VOLTAGE V
BASE-EMITTER SATURATION
COLLECTOR CURRENT I (mA) C
-800
-400 -1
-500 -100
-10
-1 -0
50
10
1 -0.1
T
=25ć
a
-100
CEsat
T
=100
a
ć
VOLTAGE V
-10
-100
COLLECTOR CURRENT I (mA) C
CE
-300
-600
-900
BASE-EMMITER VOLTAGE V (mV) BE
-1200
C /C —— V /V
ob ib
CB EB
C ib
C ob
-1
REVERSE VOLTAGE V (V)
f=1MHz
I =0/I =0
E
C
T =25 ć a
-10
-20
COLLECTOR POWER DISSIPATION P (mW)
-0.1 ȝA -0.1 ȝA -0.1 ȝA
400
-0.6 V -1.2 V
150
MHz
J 300-400
C,Mar,2013
COLLECTOR CURRENT I (mA) C
-90 -80 -70 -60 -50 -40 -30 -20 -10 -0
-0
-1200
I ——
C
V CE
-400uA -360uA -320uA
10 -1
-500
S8550
h —— FE
I
C
T =100ć a T =25ć a
COMMON EMITTER V =-1V
CE
-10
-100
-500
COLLECTOR CURRENT I (mA) C
V
——
CEsat
I
C
(V)
COLLECTOR-EMITTER SATURATION
(mV)
BEsat
DC current gain
Collector-emitter saturation voltage Base-emitter saturation voltage
Transition frequency
CLASSIFICATION OF hFE(1) Rank Range
L 120-200
Symbol
MARKING : 2TY
MAXIMUM RATINGS (Ta=25Я unless otherwise noted)
Symbol VCBO VCEO VEBO IC PC Tj Tstg
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature
Value
Unit
-40
V
-25
V
-5
V
-0.5
A
0.3
W
150
Я
-55-150
Я
ELECTRICAL CHARACTERISTICS (Ta=25Я unless otherwise specified)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current
I —— V
C
BE
ȕ=10
-500
-10 -1
400
100
T
=100
a
ć
T
=25ć
a
-10
-100
COLLECTOR CURRENT I (mA) C
f T
——
I
C
ȕ=10
-500
TRANSITION FREQUENCY f (MHz) T
ć
=25ć
=100
T a
T a
COMMON EMITTER V =-1V
SOT-23 Plastic-Encapsulate Transistors
SOT-23
S8550 TRANSISTOR (PNP)
FEATURES z Complimentary to S8050 z Collector current: IC=0.5A
1. BASE 2. EMITTER 3. COLLECTOR
COMMON EMITTER T =25ć
a
-280uA
-240uA
-200uA
-160uA
-120uA
-80uA
I =-40uA
B
-2
-4
-6
-8
-10
-12
COLLECTOR-EMITTER VOLTAGE V (V) CE
V —— BEsat
I
C
DC CURRENT GAIN h FE
500 100
C
10 -1
400
COMMON EMITTER V =-6V
CE
Ta=25ć
-10
-100
COLLECTOR CURRENT I (mA) C
P —— T
C
a
300
200
100
0
0
25
50
75
100
125
150
AMBIENT TEMPERATURE T (ć) a
C,Mar,2013
CAPACITANCE C (pF)
Test conditions
V(BR)CBO
IC = -100ȝA, IE=0
V(BR)CEO
IC =-1mA, IB=0
V(BR)EBO
IE= -100ȝA, IC=0
ICBO
VCB= -40V, IE=0
ICEO
VCE= -20V, IB=0
IEBO
VEB= -3V, IC=0
hFE(1)
VCE= -1V, IC= -50mA
hFE(2)
VCE= -1V, IC= -500mA
VCE(sat)
IC=-500mA, IB= -50mA
VBE(sat)
fT
IC=-500mA, IB= -50mA
VCE= -6V, IC= -20mA
f=30MHz
H 200-350
Min -40 -25 -5
120 Hale Waihona Puke 0Max Unit V V V