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陶瓷表面金属化Cu薄膜应力调控
作者：周灵平, 陈道瑞, 彭坤, 朱家俊,汪明朴
来源：《湖南大学学报·自然科学版》2010年第11期
摘要：利用直流磁控溅射方法在AlN陶瓷表面沉积了单层Cu薄膜，采用X射线衍射方
法研究了沉积温度对薄膜应力的影响，并用有限元方法模拟不同温度下沉积的Cu薄膜中的热应力及变形分布情况.沉积的薄膜应力表现为张应力，并随沉积温度的升高先增大后减小，沉积温度为200 ℃左右时，薄膜应力达到最大值；在AlN表面引入过渡界面可明显地减小薄膜
应力，并根据微观结构和物理性质的变化等对薄膜应力的变化进行了解释.
关键词：金属化；薄膜；应力；AlN；沉积温度
中图分类号：TB741 文献标识码：A
Stress Control of Metalized Copper Thin Filmon AlN Ceramic Surface
ZHOU Ling ping1,2,CHEN Dao rui1,PENG Kun1,ZHU Jia jun1,WANG Ming pu 2
(1.College of Materials Science and Engineering, Hunan Univ, Changsha, Hunan 410082, China;
2.College of Materials Science and Engineering, Central South Univ, Changsha, Hunan 410083,China)
Abstract: A layer of copper thin films was deposited on AlN ceramic substrate in the DC magnetron sputtering method, the influences of deposited temperature on the stress of Cu thin films metallization on AlN substrate were studied in the X ray diffraction (XRD) method, and the effects of deposition temperature on the stress and deformation were also analyzed in the finite element analysis method. The residual stress in Cu film was tensile stresses, which increased first and then decreased with the increase of deposition temperature, and the stress reached the maximal value when the deposition temperature was 200 ℃. The stress of Cu thin films metallization on AlN substrate could be reduced by implanting the transition interface on AlN substrates. The change of stresses was explained according to its microstructure and physical properties.
Key words: metallization; thinfilm; stress; AlN; deposited temperature。