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CMOSFET
oxide
n+
gate
n+
oxide
p+
gate
p+
oxide
P型 si sub
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P阱工艺
N阱工艺
双阱工艺
VS
S
VOUT
VIN
VDD
VS
S
VOUT
VIN
VDD
VS
S
VOUT
VIN
VDD
P+ N+ P-
N+
P+
P+ N+
P+ N+
N+
P+ N-
P+ N+
field oxide oxide source gate drain oxide gate oxide
silicon substrate
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在硅衬底上制作MOS晶体管
silicon substrate
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field oxide
oxide
silicon substrate
A’
四层三结结构的双极晶体管
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C
E
B
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相关知识点
隐埋层的作用、电隔离的概念、寄生晶体管
MOS集成电路的工艺
P阱CMOS工艺 N阱CMOS工艺 双阱CMOS工艺 BiCMOS集成电路的工艺
源极(S) 栅极(G)
N沟MOS晶体管的基本结构
漏极(D) 源极
栅极（金属）
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gate
source
drain
silicon substrate
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contact holes
gate source drain silicon substrate
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contact holes
gate source drain silicon substrate
oxide
oxide
2018/1ide
gate gate drain source silicon substrate
oxide
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自对准工艺
1. 在有源区上覆盖一层薄氧化层
2. 淀积多晶硅，用多晶硅栅极版图 刻蚀多晶硅
3. 以多晶硅栅极图形为掩膜板，刻 蚀氧化膜 4. 离子注入
thin oxide layer
gate oxide
oxide
silicon substrate
oxide
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gate oxide polysilicon oxide silicon substrate oxide
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polysilicon gate
ultra-thin gate oxide
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2．P阱光刻：
涂胶
光源
腌膜对准
曝光
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显影
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刻蚀（等离子体刻蚀）
去胶
3．P阱掺杂：
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完整的简单MOS晶体管结构
polysilicon gate top nitride metal connection to source
metal connection to gate doped silicon metal connection to drain
field oxide oxide gate drain gate oxide oxide source silicon substrate
P+ N+ P-
N+ I-Si
P+
P+ N+ N-
N-Si
P-Si
N+-Si
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掩膜1： P阱光刻 P-well P-well
P-well
N-Si-衬底
N+ P+
N-Si
P+
N+
N+ P+
P
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具体步骤如下： 1．生长二氧化硅（湿法氧化）：
SiO2
Si-衬底
Si(固体)+ 2H2O SiO2（固体）+2H2
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腐蚀
photoresist
oxide silicon substrate silicon substrate
oxide
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去胶
field oxide
oxide silicon substrate silicon substrate
oxide
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1. 双极集成电路的基本工艺 2. 双极集成电路中元件结构
双极集成电路的基本工艺
E
B
C
S
P+
n+
p
n+-BL
n+
P+ n-epi
P-Si
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双极集成电路中元件结构
A
E B
C
S
P+ n-epi
n+
p
n+-BL
n+
P+
tepi-ox xmc xjc TBL-up
Tepi Tepi
P-Si P-Si
oxide
gate gate silicon substrate
oxide
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ion beam
Scanning direction of ion beam implanted ions in active region of transistors Implanted ions in photoresist to be removed during resist strip. gate gate source drain silicon substrate photoresist
silicon substrate
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感光区域
非感光区域
photoresist oxide silicon substrate
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显影
photoresist photoresist
Shadow on photoresist
oxide silicon substrate
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photoresist oxide silicon substrate
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Ultraviolet Light Chrome plated glass mask
Shadow on photoresist
Exposed area of photoresist photoresist oxide
绝缘层（SiO2）
漏极
n+
n+
P型硅基板
半 导 体 基 板
MOS晶体管的动作
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MOS晶体管实质上是一种使 电流时而流过，时而切断的开关
MOS晶体管的立体结构
polysilicon gate
top nitride metal connection to source metal connection to gate doped silicon metal connection to drain