Design in ( EMI, Controllability )
Hard
3
10/23/2017
Public
Fast/Easy Drive/FRFET Comparison
FAST Version
• • • • • • • High efficiency Hard Switching Topologies Reduced Qg and Eoss Hard Switching Topologies Boost PFC,Full Bridge Phase Bidirectional Buck- Boost Semi Bridgeless PFC
Easy Drive Version
• Easy to drive with low gate oscillations. Low EMI and Voltage spikes • Controlled lower Coss. • Hard/Soft Switching Topologies • Boost PFC, Semi Bridgeless • PFC, Phase Shift DC-DC • • • • • • •
Auto SuperFET III (2017) – Easy Drive • 41% lower Rsp than SF2 • Direct replace to SF2 •72mohm in D2pak • 67mΩ in TO-220/F, 25mΩ in TO-247 Auto SuperFET III (2018) – FRFET 28mΩ in TO-247 80mΩ in D2pak
41 23
150 110 100 70 50 99 104 67
0 D2PAK Power88 TO-220 TO-247
Blue: SuperFET III Red: SuperFET II
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Features, Benefits and Applications of SFIII 650V
NVH025N65S3 (Samples Available) NVHL028N65S3F (Samples Q4,2017) NVHL040N65S3F (Samples Q4,2017) NVH072N65S3 (Samples Available)
October ,2017 April ,2018
FRFET Version
Fast Body Diode Small Qrr and Trr Robust diode ruggedness Better reliability Soft switching resonant topologies like LLC, LCC, Dual Active ridge DC-DC
SJ MOSFET 650V Technology Evolution
SJ MOSFET Generation
SuperFET II (2011) SuperFET II Fast (2011) • Direct replace to SupreMOS® • For high efficiency SuperFET II (2012) – Easy Drive SuperFET I (2004) • First Gen. SJ MOSFET • Best-in-class body diode dv/dt •190mΩ in TO-220, 70mΩ in TO-247 • Direct replace to SF1 • Easy to design by a internal Rg •104mΩ in TO-220, 41mΩ in TO-247 Auto SuperFET II (2012) – FRFET • Smaller Qrr and robust body diode • For soft switching topologies SupreMOS (2009) • 50% lower Qg than SF1 • World 1st Trench Type • 90mΩ in TO-220, 36mΩ in TO-247
2004
2009
High
2011
2012
2015
2017
2018
New
• SuperFET series : Multi Epi Type • SupreMOS : Trench Type
SF3 FRFET
Performance (Efficiency)
SF3 Easy
New
SF2 FRFET
Low Easy
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APM ( Automotive Power Module - MOSFET)
EMC
Bond wires Signal leads
Al Wire
Power dies
DBC
Lead Frame
Power leads
DBC substrate
12
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基于超结MOSFET、宽禁带(WBG)及模块的 HEV/EV车载充电器(OBC)及DC-DC方案
Charlie Wang October 2017
Public Information
Technology Driven Capability
Silicon : 12V – 1700V - Best FOM, Packaging Options
August ,2018
150mΩ
NVB150N65S3F (Samples Q1,2018)
10/23/2017
NVBL150N65S3F (Samples Q2,2018)
Public
8
New Package for Fast Switching Applications
Package Outline TOLL Standard Package
Pout [W] 10M
SiC
Central PV*
Superjunction: 650V – 900V - Optimized HV solution SiC: 900V – 1200V - High power density performance
pile
1M
100k
OBC**
GaN: 650V - High frequency performance
200
• Higher power density • Ideal for High Power OBC systems
• Less paralleling MOSFETs Less space requirements Less critical for layout interferences of paralleling devices
10/23/2017
Public
TO-Leadless Package
Automotive released portfolio from 40V to 150 Automotive Development for 650V HV MOSFET’s Very high current capability up to 300A - Smaller footprint than D2PAK - 9.8x11.7 mm vs 10.2x15.2 mm 30% less board space & half in height - High Creepage and Clearance 2.4mm than D2pak 1.5mm - Good thermal efficiency - Very low package resistance 40% lower RPackage supports very low power dissipation - low Thermal Resistance (0.35 to 0.5 C/W) - Low package inductance - ~ 2 nH package inductance compared to ~ 6-8 nH of D2PAK improved EMI, simplifies board-design - Large source pin - Low resistance contact to board , further dissipation and reliability advantage (less electro-migration at high temperature / high current) - Highest reliability - Passed 6000 Thermal Cycles ( 6 x AEC-Q101 requirement)
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TOLL Package with Kelvin Sense
Source Wire of 5mil
Existing package with no Kelvin Sense
Reference Die Information for HV SF2 attached
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Features • Lower RDS(ON) / Same Packages • Lowest FOM • RDS(ON) max. X Qg typ. • Optimized Turn-ON • Robust body diode • 650V Benefits • High Power Density • Less paralleling MOSFET • High System Efficiency • High System Reliability • Improved Safety Margin Applications • OBC and HV DC-DC • Automotive HEV-EV