ʧ石墨烯ʨŶ ŷХ ΰ附一、充分利用石墨烯及量子点，新一代器件纷纷发布(㄀23义)附二、 2010年诺贝尔物理学奖授予石墨烯发明者，广泛应用于半导体及透明电极(㄀28义)附三、石墨烯诺贝尔奖获得者访问日本，“双层石墨烯其载流子迁移率也可超过100万”(㄀29义)附四、碳电子学时代是否会因石墨烯而到来(㄀30义)附五、如何发挥石墨烯的潜力？东京大学解析载流子迁移率的劣化原理(㄀33义)附六、在石墨烯开发上也领先一步的三星(㄀35义)一、 进入实用化竞争阶段，应用例不断出现2010 ⱘ䇎䋱 ⠽⧚ ⬅ ⾏⷇ ⛃ⱘⷨおҎ 㦋 DŽ⷇ ⛃ 䍙䍞 ⷇ ⱘ⡍⅞ 䋼DŽ ⫼⷇ ⛃ⱘⷨ Ӯг ⧗㣗 DŽ⷇ ⛃ Ў ⦄催䗳 ԧㅵǃ催♉ Ӵ ǃ▔ ǃ㾺 䴶 ǃ㪘⬉∴ 催 䰇㛑⬉∴ㄝ ⾡ ϔҷ ӊⱘḌ DŽ˄✻⠛˖˄a˅LBNLˈ˄b˅ 䗮ˈ˄c˅ѻ㓐ⷨˈ˄dˈe˅ ⡍ ˅“⼲ҭ 䗴ⱘ ”DŽ ӕϮⱘϔ Ҏ ℸ ⷇ ⺇ “⷇ ⛃”DŽ䖭 Ў⷇ ⛃ 䴶 䍙䍞⦄ ⱘ⡍ ˄ 1˅DŽ⷇ ⛃ⱘ ⦄ˈ Ң 䗴 ⫼Ѣ⬉ ӊⱘ 㛑 ㄝ ⊯乚 䴽 DŽ1˖“⼲ ”⷇ ⛃ⱘ⡍⚍⷇ ⛃ ⱘ“ 䋼”˄a˅ˈҹ Ҫ ϡ ⱘ“⣀⡍ 䋼”˄b˅DŽ㛑 䕑≑䔺ⱘ⷇ ⛃ⱘ 䴲 㭘ˈ ϔϾ⺇ ˈ㑺Ў0.34nmDŽԚ Ϣ䞥 ⷇Ⳍ ˈ䴲 ⹀DŽ⨲ ⱛ ⾥ 䰶˄Royal Swedish Academy of Sciences˅ 㸼2010 ⠽⧚ 䖭ḋ↨ ˈ“ ⫼ ⷇ ⛃ ԰ⱘ ҹ 䕑ϔ 4kgⱘ ”DŽ䖬 Ԅㅫ ⼎ˈ 䞡 ⷇ ⛃㭘⠛ˈՓ Ϣ亳 剰㝰Ⳍ ⱘ䆱ˈ 䕑2 䞡ⱘ≑䔺DŽ⷇ ⛃⫼԰⬉ ӊ Ӯ DŽ ⷇ ⛃Ёⱘ⬉ Ϣぎえ˄Hole˅䕑⌕ 䖕⿏⥛ ⏽ϟ 䖒 ⸙˄Si˅ⱘ100 20ϛcm2/VsDŽ䖭ϔ 䖰䖰䍙䖛ҹ 㹿䅸Ў䕑⌕ 䖕⿏⥛ Ў7.7ϛcm2/Vsⱘ䫥 䪳˄InSb˅DŽ㗠⷇ ⛃ ⏽ϟⱘ⬉䰏 䪰˄Cu˅ⱘ2/3DŽҎӀ䖬 ⦄ˈ⷇ ⛃ 㗤 1ғ̚2ғA/cm2ⱘ⬉⌕ ˈ䖭 䪰㗤 䞣ⱘ100 DŽ䕑⌕ 䖕⿏䗳 ˈ 䖒 ⱘ1/300DŽӴ⛁⥛Ϣ䞥 ⷇Ⳍ ˈ Ϟ 㭘⠛ ⢊ˈ ҹ⷇ ⛃԰Ў ҷⱘ ⛁ DŽ⦄䍙催䗳FET ▔䆌 ⷨお ҹ 乍こ䗣⡍ ⱘ ⷇ ⛃Ў 䈵ˈⷨ ϔҷ ӊⱘ ⫼ ˄ 2˅DŽЏ㽕 䈵Пϔ ⫼⷇ ⛃ⱘ催䕑⌕ 䖕⿏⥛ 催䖕⿏䗳 ԰ⱘTHz乥⥛ⱘ ԧㅵDŽ⧚䆎ϞԄ䅵 ԰乥⥛ 䖒 10THzDŽ2˖ ⫼乚 Ң⷇ ⛃ⱘ⫼䗨 Ў⡍⅞ ⫼䗨ˈ⬉ ӊ⫼䗨 䗴ԧ⫼䗨DŽ䚼 ⫼䗨ϢCNT䞡 DŽ㕢 IBMϢ䶽 ϝ ッ ⷨお ˄SAIT˅ 2010 12 В㸠ⱘ ԧ 䗴 Ⳍ 䰙Ӯ䆂“2010 IEEE International ElectronDevices Meeting˄IEDM 2010˅”Ϟ њ䗮䘧 Փ⫼⷇ ⛃ⱘ催䗳 ԰ RF⬉䏃⫼FET ˄⬉ ԧㅵ˅DŽIBMⱘ⷇ ⛃FETⱘ ℶ乥⥛催䖒240GHzDŽ ˈ㕢 ⋯ ⷊ ˄UCLA˅ Ѣ2010 9 ℶ乥⥛䖒 300GHzⱘ⷇ ⛃FETDŽ㽕䍙䍞 ℶ乥⥛䖒 600GHzҹϞⱘ ⠽ ԧHEMT˄催⬉ 䖕⿏⥛ ԧㅵ˅ˈϸ ⱘ⷇ ⛃FET ⱘ 㛑䖬 ⊩ ⒵䎇㽕∖DŽϡ䖛ˈIBMⱘ⷇ ⛃FETⱘ ℶ乥⥛ 催 ˈ2008 12 26GHzˈ2009 6 䖒 50GHzˈ2010 2 催㟇100GHzˈℸ⃵ 䖒 њ240GHzDŽ ϡЙⱘ ˈ⷇ ⛃FETⱘ 㛑 㛑Ӯ䖒 ⫮㟇䍙䖛HEMTⱘ ㄝ∈ DŽ⷇ ⛃䖬㛑⫼ 䗴▔ ӊDŽ ϰ ⬉⇨䗮 ⷨお 䖏⋄ϔⱘⷨお 㒘ˈⳂ ℷҹ ⫼⷇ ⛃ 䍙催䕧 ⥛ⱘ䍙ⷁ㛝 ▔ ӊЎⳂ 䖯Ⳍ ⷨおDŽ 䆹 ҟ㒡ˈ ⊼⚍ ˈ⷇ ⛃䞛⫼⬉ Ϣℷ ⿄ⱘ㛑 䗴ˈ㗠Ϩ ⦄䕗 䕑⌕ ⱘ 䋼DŽӬ 䖯 㒚ϡ䖛ˈⳂ ⫼ ⱘ㒱 䚼 ⷇ ⛃FETЎ 催♉ ⇨ԧӴ ӊㄝRF⬉䏃⫼FETDŽ䘏䕥⬉䏃⫼FET 䴶ϪDŽ䖭 Ў ⷇ ⛃≵ 䱭˄Band Gap˅DŽ≵ 䱭ⱘ䆱ˈ ⊩ ⦄䘏䕥⬉䏃 乏ⱘ ԧㅵ“ ˄Switch Off˅” 㛑DŽԚ 䖥㾷 䖭ϔ䯂乬ⱘ㒓㋶ ⍂ ∈䴶DŽ⠽䋼 ⷨお 䰙㒇㉇㒧 ⷨお Џӏⷨお 䍞ϔҕˈЎњ ⷇ ⛃FET⫼԰䘏䕥⬉䏃ˈⳂ ℷ ⷨお 䱭ⱘ ӊDŽ 䍞㸼⼎ˈ“ ⸙г㛑䖯ϔℹ 㒚 ˈ䙷М䗮䘧 㒜Ӯ ⦄ Ͼ ⱘ DŽ ㅵ䖬ϡ⏙Ἦ ҔМ ˈԚ 㭘⠛——⷇ ⛃ⱘⷨお Ӯ Ў䞡㽕ⱘ 㗗ձ ”DŽ㾺 䴶 䆩 ϡ 䴶Ϫ䰸њ催䗳催♉ ӊП ˈ䗣 ⬉㝰г 䖥 ⫼ ⱘⱘ ⫼՟DŽ䆒 ԰ЎⳂ 䘡Փ⫼ⱘITOⱘ ҷ ˈ⫼Ѣ㾺 䴶 ǃ ⎆ 䴶 ǃ 䰇㛑⬉∴ EL✻ ㄝDŽ䆩 г Ѡ䖲ϝ 䴶ϪDŽ䗣 ⬉㝰䖭ϔ⫼䗨 ⱘ Ѣˈ⷇ ⛃ 䕗催ⱘ䕑⌕ 䖕⿏⥛Ϩ 䕗㭘DŽϔ㠀 䇈ˈ催䗣 Ϣ催 ⬉ ѦЎⳌ ⱘ 䋼DŽҢ䖭ϔ⚍ ⳟˈITOℷ 䗣 Ϣ ⬉ ⱘℸ⍜ 䭓˄Trade-off˅ ㋏ⱘ䖍㓬㒓Ϟ˄ 3˅DŽ䖭г 䍙䍞ITOⱘ ҷ 䖳䖳≵ ⦄ⱘ DŽ3˖ 㛑䗣䖛 㒓г㛑䗮䖛⬉⌕⧚ ⱘ⷇ ⛃Ϣ⦄ 䗣 ⬉ ⬉ 䖯㸠њ↨䕗DŽ⷇ ⛃ 䴶 Ϟ ⱘ䕑⌕ 䖕⿏⥛ˈ⊩㒓 ϞҙЎ ˈ ℸ 䗣 DŽ⷇ ⛃ ⧚䆎Ϟ 䙓 䖭⾡ℸ⍜ 䭓ⱘ ㋏ Ў⧚ ⱘ䗣 ⬉㝰DŽ ˈ⬅Ѣ䕑⌕ 䖕⿏⥛䴲 催ˈ Փ䕑⌕ 䕗Ԣˈ ⬉ гϡ ϟ䰡DŽ㗠䕑⌕ 䕗Ԣⱘ䆱ˈӮ↨䕗 こ䖛 ⊶䭓㣗 ⱘ DŽⳌ Ѣ Ͼ ⱘ䍙㭘 ḋ Ѣ 催䗣 DŽϡҙ 㾕 ˈ⷇ ⛃䖬 䗣䖛 䚼 㑶 㒓ˈ䖭ϔ 䋼Ⳃ ЎҎ ⶹDŽℸˈ Ѣ䖬 ⫼㑶 㒓 ⬉ⱘ 䰇㛑⬉∴㗠㿔ˈ⷇ ⛃ Ў ҷⱘ䗣 ⬉㝰DŽϢϡ䗖Ѣ ⱘITOⳌ↨ˈ䖬 䕗催ⱘӬ DŽϡ䖛ˈ䗣 ⬉㝰Ⳃ 䖬 䯂乬DŽ⬅Ѣ ԰ 䴶⿃⷇ ⛃ Ӯ⏋ 䋼 㔎䱋ˈ ℸ 䆩 ⱘ ⬉ 䗣 䛑 䖒 ITOⱘ∈ ˄ 4˅DŽ ℸˈ⷇ ⛃ҡ ⫼ ԰㾺 䴶 DŽ4˖ Ͼ䗣 ⬉㝰䆩 ՟˄a˅Ўѻ㓐ⷨҹ⷇ ⛃Ў䗣 ⬉㝰 ԰ⱘ㾺 䴶 DŽ˄b˅ЎՓ⫼CNTⱘ՟ DŽ˄c˅㸼⼎䆩 ՟ⱘ 㛑 ⫼䗨DŽ˄a˅⬅ѻ㓐ⷨ կDŽ二、 或将引发布线革命Ӯ 㒓䴽⷇ ⛃䖬 Ҫ↨䕗 䈵 㔎Уⱘ 乍⣀⡍ 䋼DŽҹ ⷇ ⛃Ў՟ˈ ⬉ ㄝ䕑⌕ ⱘ 䋼䞣*Ў䳊ˈ㗠Ϩ ⏽ϟ ⼎ 䞣 䳡 *DŽ䖬Ӯ ⫳⬉䰏 ϡӮ䱣䎱⾏ ⱘ“ Ӵ䕧”*⦄䈵DŽ* 䋼䞣˖ 䖲 䖤 䞣Ϣ㛑䞣ⱘ ⿟ 2䰊 ⱘ㋏ DŽ 䋼䞣Ў䳊 ˈ䕑⌕ Ӯ “ ”ϔḋ 䗳䖤 DŽ Ѣ 催 ⬉ ⱘ 䗳 DŽ㗠Ⳍ Ѣ⺕ ⱘ“ ˄Cyclotron)䞡䞣” ϡӮЎ䳊DŽ*䞣 䳡 ˖ ⬉ Ѡ㓈 ⱘ ˄Ѡ㓈⬉ ㋏㒳˅ ⺕ ˈ⬉ 䔼䘧 㛑䞣∈ ⱘ ϡⳌ ˄䞣 ˅ⱘ⦄䈵DŽϔ㠀 㛑 Ԣ⏽ ⦃ ϟ㾖⌟ 䖭⾡⦄䈵DŽ 㹿⫼԰ ԧ 䋼䕗催ⱘ䆕 DŽ* Ӵ䕧˖ ⿄ 䘧Ӵ䕧˄ballistic transport˅DŽӮ Ёⱘ䕑⌕ 㞾⬅㸠⿟䭓 Ѣ ⱘ ˈ㗠Ϩ䕑⌕ ѢⳌ ⢊ ⫳DŽӮ 䑿ⱘ⬉䰏ˈ Ӯ ⫼ ⬉ ⱘ⬉ 㛑 䗴㗠ѻ⫳⬉䰏˄䞣 ⬉䰏˅DŽϢ䍙⬉ Ўϡ ⱘ ˈϡӮ ⫳䰏 䚼⺕ ⱘ⦄䈵˄䖜 㒇 ˅DŽӴ䕧⡍ 㛑 ⫼ ˈ⷇ ⛃ 䍙䍞 䗮䖛 ⬉⌕ⱘ 㒃⡍ 㗠 Ў䴽 ⱘ 㒓 ˈ IBMǃ㕢 㣅⡍ 䗮 ⱘ ԧ ⷨお Ⳃ 䛑 䖯䖭 䴶ⱘⷨおDŽ䖭 Ў⬉䰏 ϔ㠀Ӯ䱣ⴔ 㒓䭓 ↨՟ ˈ㗠 Ӵ䕧 㒓 㒓䍞䭓ˈ ԡ䭓 ⱘ⬉䰏 䍞ԢDŽ䖭 Ѣ㾷 LSI ԧ 㒓Ё ⱘϔ 䇒乬——Ӵ䕧 䖳䯂乬DŽ ˈ Ӵ䕧⡍ 䖬 䋼䴲 ˈ ℸ Ѣ ⦄㛑 ⱘ䍙催♉ Ӵ DŽ䗮 ԧㄝгӮ ⫳ Ӵ䕧⦄䈵DŽԚ㒱 ҹ Kⱘ Ԣ⏽ Ў 㽕 ӊˈ㗠Ϩ ⫳䖭ϔ⦄䈵ⱘ䭓 䴲 ⷁˈҙЎ nm̚ ⱒnmDŽ㗠⷇ ⛃ ⏽ϟ ⦄䭓䖒 mm̚ cmⱘ Ӵ䕧⊼1˅DŽ⊼1˅Ⳃ ⹂䅸⷇ ⛃ Ԣ⏽⦃ ϟ ⦄ mmⱘ Ӵ䕧DŽ ⏽ϟ 㛑Ӵ䕧200nmҹϞDŽ䖯㸠⷇ ⛃⧚䆎ⷨおⱘ⠽䋼 ⷨお 䰙㒇㉇㒧 ⷨお ⱘ⣀ゟⷨお 㢹 ⊩ ˈ⷇ ⛃ ⫳ⱘ Ў“ 㦅 こ䱻˄Klein Tunneling˅”*ⱘ䗮䘧 Փ䖭⾡ ↨ Ҫ ⫳ Ӵ䕧⦄䈵DŽ ㅵѻ⫳ 㦅 こ䱻 ˈ ⬉ ㄝ ЁӮ 㛑䞣Ϟⱘ䱰⹡ˈԚ䕑⌕ ✊ϡӮ 㹄 ⱘ ϟ䍞䖛㛑䞣䱰⹡˄ 5˅⊼2˅DŽ* 㦅 こ䱻˄Klein Tunneling˅˖䙉 Dirac ⿟ 䖤 ⱘ⬉ ⾡ ӊϟ䍞䖛㛑䱰ⱘ⦄䈵DŽ1929 ⬅ · 㦅 ˄Oskar Klein˅ ⦄DŽ ⿄Ў 㦅 Ճ䈀˄Klein Paradox˅DŽ⊼2˅П ҹӮ ⫳䖭⾡⦄䈵ˈ Ў⷇ ⛃ⱘ⊶ Ϣ㛑䞣ⱘ㡆 ㋏Ў 䋼䞣 ㄝѢ䳊ˈ㗠ϨӋ⬉ ϢӴ䕧 Ⳍ ⱘ“Dirac⚍” “䋱 Ⳍԡ”㞾⬅ ЎȺⱘ DŽ5˖㛑 ⦄“Ṻ ⱘ Ӵ䕧”⷇ ⛃Ӯ ⫳ Փ гϡӮ ˈ䕑⌕ 䗮䖛ⱘ“ 㦅 こ䱻”⦄䈵˄a˅DŽ䖭 Ўn Ϣp 䕑⌕ ⿏ Ў“䋱 Ⳍԡ”ⱘ㞾⬅ ˄b˅DŽ Ϟ ⫳䞣 ⦄䈵ⱘ 䋼ˈ⷇ ⛃ ⏽ϟ ⦄ Ӵ䕧˄c˅DŽ䖥ҎӀ䖬 ⦄њ⷇ ⛃ⱘ ϔ⾡⣀⡍ 䋼DŽ䙷 ϡ ⺕ ˈ 䳔Փ⷇ ⛃ ˈ 㛑 њ ⺕ ϔḋՓ⷇ ⛃ⱘ⬉⡍ ⫳ DŽ ℸ⷇ ⛃䖬 ⫼԰催♉ Ӵ ӊDŽ催㪘⬉∴ⱘ䕧 ⥛⷇ ⛃䖬 㱑 ⧚ 㹿䅸Ў ⱘ ⫼՟DŽ↨ ⫼԰䫖⾏ ⬉⬉∴ⱘ⬉ DŽ㕢 Vorbeck Materials ǃ㕢 㛑⑤䚼ϟ ⱘⷨお ——㽓 ⋟ 偠 ˄PNNL˅ҹ 㕢 乓 IlhanAksay ⱘⷨお 㒘2010 7 ˈ䗮䖛 䫖⾏ ⬉⬉∴ⱘ⬉ Ё⏏ 䞣⷇ ⛃ˈϡҙ ⱘ㛑䞣 ˈ䖬 催䕧 ⥛ ⊼3˅DŽ“ 䩳 ℸ 䳔㽕 ⱘ ⬉DŽԄ䅵䖬㛑⫼Ѣ⬉ ≑䔺 ⬉”˄Vorbeck Materials˅DŽ⊼3˅ ℸ 㸼⼎ ⭥ⱘⷨおҎ DŽ䖭 Ўҹ CNTгⳌ㒻 ⦄њⳌ ⱘ ˈϡ䖛 㹿 ЎTiㄝ 䋼ⱘ ˈⳂ 䅸CNTϡ ⱘ DŽԣ ⬉ 䖬 䆩 ⷇ ⛃⫼԰䫖⾏ ⬉⬉∴ⱘ䋳 ˄ 6˅DŽ⷇ ⛃ 䗮䖛⚻㒧 Ѣ䆹 Џ ѻ ——㣃䜮ⱘ 㛖 ԰㗠 ⱘDŽ ԣ ҟ㒡ˈ㱑✊Ⳃ 㛑䞣 䖬↨ϡϞ⷇ ˈԚ Ԣ⏽ϟⱘ ⬉⡍ ⬉㗤 䴶 ⼎ њ䍙䍞⷇ ⱘ 㡆⡍ DŽ6˖ 催㪘⬉∴ⱘ⡍ԣ ⬉ ℷ ⫼⷇ ⛃ ⱘ䫖⾏ ⬉⬉∴ⱘ䋳 䗴˄a˅ҹ 䆹⬉∴ⱘ⡍ ˄b˅DŽ3̚4 ⷇ ⛃П䯈 ぎ䱭˄Cavity˅ˈ ℸ Ԣ⏽⦃ ϟ䕧 ⥛ 䕗催ˈ ⬉ 㛑гϡ ⱘ⡍⚍DŽ㗠Ϩ⷇ ⛃䖬 Փ 䰇㛑⬉∴ⱘ 㛑㦋 亲䎗 催DŽ ⿄ˈ ԧ 䰇㛑⬉∴ⱘ ԧ Ё⏋ ⇻ ⷇ ⛃ ˈ pn 㸼䴶⿃ ㄝ ˈ䕀 ⥛ 催 њ ⱘ3 DŽ三、 制造工艺决定成败䗴 㡎 䋹Ϟ 䗄ˈ⷇ ⛃ 䇌 ⫼乚 Ё Ў ϔҷ ӊˈԚ䖭ѯ ӊ㽕䖒 䰙 ⫼∈ ˈ䖬䳔㽕㾷 ϔ 䯂乬DŽ䙷 ԩ 㽕∖ⱘ ԡ㕂 ԰ ϡ 㔎䱋 䋼ⱘ催 䋼⷇ ⛃ˈ 㗙䗮䖛 ˄Doping˅⊩ ⦄ 䕑⌕ ⱘ⷇ ⛃DŽ⫼Ѣ䗣 ⬉㝰⫼䗨 㛑 ⦄ 䴶⿃ 䞣ѻ ˈ㗠⫼Ѣ ԧㅵ⫼䗨 㛑 催 ㊒ ˈ䖭ѯ䯂乬䛑 䞡㽕DŽℸ ⱘ⺇㒇㉇ㅵ˄CNT˅ ϔϾ ⱘ 䆁DŽ CNTг Ϣ⷇ ⛃ 䗮ⱘ 㡆⡍ ˈ 催ⱘ䕑⌕ 䖕⿏⥛ǃ Ӵ䕧⡍ ϸ ㄝDŽП ҹ 㛑 ⫼ ˈ ѢCNTⱘϔ㓈 ⢊ 㟈 䲒 ⧚ˈ㗠Ϩ ⊩⹂ゟҹ䞣ѻЎ ⱘ 䗴 㡎DŽ 䆎⡍ ԩ 㡆ˈ㢹 ⊩⹂ゟ 䗴 㡎 ϡ㛑 ⫼ DŽ⾡ 䗴 㡎 Ӭ㔎⚍Ң䴲 ㅔ ⱘԢ 䗴 ⊩ 䴶⿃䞣ѻ 㡎ˈ ⾡⷇ ⛃ 䗴 㡎 Ḝ㹿 ˄ 7˅DŽԚ ⾡ Ḝ Ӭ㔎⚍ˈ≵ ϔ⾡ ϛ㛑ⱘDŽ7˖ ⾡ 䗴 ⊩ 䳔㽕㾷 ⱘ䇒乬ⱘ⷇ ⛃ ԰ ⊩DŽ˄a˅ Ẅ ⾏⊩佪⃵䆕 ⷇ ⛃ 〇 DŽ˄b˅㸼⼎ ԰ 30㣅 ⱘ⷇ ⛃㭘⠛DŽ˄c˅ ⊩ 䳔 ⛁SiC DŽԚ ⾏⷇ ⛃↨䕗 䲒DŽ˄d˅ϡ㛑㦋 催 䋼⷇ ⛃ˈԚ䗖⫼Ѣ䞛⫼⍖ 㡎 ԰ ӊDŽ˄d˅ⱘ⇻ ⷇ ⛃✻⠛⬅ ⥝ Ϟ䞢ⷨお կDŽԧ㗠㿔ˈ Ў2010 䇎䋱 ⠽⧚ 㦋 ⧚⬅ⱘ“ Ẅ ⾏⊩”ˈ ϔ⾡ ⷇ Ϟ㉬䌈 ϟ㉬ 㛊 ⷇ ⛃ⱘ ⊩ˈ㔎⚍ 䲒 㦋 ⱘ⷇ ⛃⠛ⱘ DŽ㗠Ϩ 㛑 㦋 mm㾕 ⱘ⷇ ⛃⠛DŽ Ӭ⚍ ˈ ҹ㦋 䞛⫼ Ҫ ⊩ ⊩ ⦄ⱘ 催 䋼⷇ ⛃⠛DŽ䖬 Ҏ ˈ“ℷ Ў Ẅ ⾏⊩ⱘ ⦄ Փ⷇ ⛃ⱘ ⾏ⷨお ⷁ 䯈 њ䖯 ”˄ 䗮ϢѻϮ 㓐 ⷨお 㒇㉇⬉ ӊⷨおЁ ԰ⷨおԧ㓓㡆㒇㉇⬉ Ё ッⷨお 䅵 㒘䭓Ԥ㮸 䚢˅DŽˈ 䗴 䴶⿃⷇ ⛃㝰г Ў 㛑DŽ䞛⫼ⱘ ⊩ ⇨Ⳍ≝⿃˄CVD˅⊩DŽ䖭 ⳳぎ Ё ⬆⛋ㄝ⺇㋴⑤ ⛁㟇1000ć Փ 㾷ˈ✊ Ni Cuㄝ䞥 ㅨϞ ⷇ ⛃㝰ⱘ DŽ2010 6 䶽 佚 ˄Sungkyunkwan University˅Ϣϝ ⬉ ㄝ ˈ њ 30㣅 ⷇ ⛃㝰ⱘ 䗴 㡎ҹ 䞛⫼䖭⾡⷇ ⛃㝰ⱘ㾺 䴶 ˈ䖭ϔ⍜ 䅽⷇ ⛃ⷨおҎ Ҏ DŽϡ䖛ˈ 1000ć催⏽ϟ䞛⫼ⱘ 㡎 㛑ҹ ⧚ⱘ 䖯ˈ䖭 䆹 䗴 㡎ⱘ⫊乜DŽ㗠Ϩ䖭⾡ 㡎䖬 䕀 ⱘ䖛⿟Ё ⏋ 㔎䱋 䋼ⱘ䯂乬DŽὐẃϞ䫎䆒 ⇃ϔḋSiC ⱘ⛁ 㾷⊩ ˈ SiC ⛁㟇1300ć 䰸 㸼䴶ⱘSiˈ ԭⱘC㞾 䞡 㒘 ⷇ ⛃⠛ⱘ 㡎DŽIBM 2010 1 ⱘ Ẅ ⾏⊩ Ў䖭⾡ ⊩ ԰њ⷇ ⛃FETDŽ Ӭ⚍ “ϡӮ SiC Ϟ ⱘ㢹 ⱘ ˈ ҢϞ䴶䫎䆒 ⇃ϔḋ ⷇ ⛃⠛”˄NTT⠽ ⾥ ⸔ⷨお ˅DŽ㗠 ⱘ䇒乬 ˈ䳔㽕䴲 催ⱘ ⧚⏽ ˈ⷇ ⛃⠛ⱘ ϡ 䖒 Njm㾕 ҹϞˈ㗠Ϩ 䲒䕀 㟇 Ҫ ˈ 㛑Փ⫼ 䌉ⱘSiC DŽ㄀4⾡ ԰ 㡎 ϝ㧅⇨ԧ 2000 ⱘ⇻ ⷇ ⛃⊩DŽ䖭⾡ ⊩佪 Փ⷇ ㉝⇻ ˈ✊ ⒊⎆ ⒊ ˈ Ϟ⍖Ϟ㭘㭘ⱘϔ Փ 䖬 DŽⳂ ˈ䖭⾡ ⊩⫼Ѣ ԰ 䴶⿃䗣 ⬉㝰ҹ 䞛⫼⍖ 㡎 ԰ⱘTFTDŽ ㅵ䆹 㡎ⱘ⏽ 䕗Ԣ㗠Ϩ ⊩ㅔ ˈԚ⬅Ѣ䞛⫼ Ͼ nm㾕 ⠛ⱘ 䗴ˈ㗠Ϩϡ㛑 䖬 ˈ ℸ ⱘ䇒乬 䲒⹂ ⱘ ⬉ 䗣 DŽϡ 䖯 㡎⷇ ⛃ⱘ ⾡ 䗴 ⊩䛑 䳔㽕㾷 ⱘ䇒乬ˈ㗠 ⾡ 䖯 г ПЁ˄ 8˅DŽѻ㓐ⷨ CVD ⊩ⱘ ⧚⏽ ⬅1000ć 䰡㟇300̚400ćⱘ DŽⳂ 䆩 A4㒌 ⱘ㾺 䴶 ˄ 4˄a˅˅DŽ ѻ㓐ⷨҟ㒡ˈ䖭⾡ ՓCVD⊩ 䑿г㛑䞛⫼ ˈ ⷇ ⛃㭘⠛ⱘ 䴶 ϔѯ 䯂乬DŽ8˖ϡ 䖯 䗴 㡎⬅ҹ ⱘ 䗴 㡎 䖯㗠 ⱘ4⾡ 㡎DŽ˄a˅ CVD⊩ҹ ⱘ䯂乬——催䖒1000ćⱘ 㡎⏽ 䰡㟇400ćҹϟˈ˄b˅ 㡎⏽ 䰡㟇650ćDŽ˄c˅䗮䖛 ⸙ ϞⳈ SiC㭘㝰ˈ㾷 њSiC⛁ 㾷⊩ ⱘ⷇ ⛃䕀 䲒ⱘ䯂乬DŽ˄d˅ ≵ ⇻ 䖬 ㄝ⷇ ⛃ 䋼 ㋴ⱘ ϟˈ ⍖ 㡎⫼⷇ ⛃ ⎆ⱘ ⊩DŽ˄b˅✻⠛⬅ 䗮 կˈ˄d˅ⱘ ✻⬅Incubation Alliance կDŽ䗮 ѻ㓐ⷨ䖬 њ ϞⳈ ⷇ ⛃ˈϡ䳔㽕䕀 䖛⿟ⱘCVD⊩DŽ䖬䗮䖛Փ⫼䪕˄Fe˅԰Ў ˈ 㡎⏽ 䰡Ԣ њ650ć⊼4˅DŽ⊼4˅ 䗴䖛⿟Ё䰸 䪕ˈ⷇ ⛃Ӯ ⑤ ⓣ ḹṕϔḋ䖲 ⱘ⢊ DŽ Ӭ⚍ ˈ 䙓 Ϣ䰡Ԣ⷇ ⛃⡍ ⱘSiO2 㾺DŽSiC⛁ 㾷⊩г 䗤ℹ 䕀 䖛⿟DŽ ϰ ⳳ ⱘⷨお 㒘 њ佪 ⸙ Ϟ SiC 㭘㝰ˈ✊ 䞛⫼SiC⛁ 㾷⊩ Si Ϟ ⷇ ⛃㝰ⱘ DŽ 䆹 ҟ㒡ˈⳂ 䞛⫼䖭⾡ ԰ њϸ CMOS䗚 ㄝDŽ⇻ ⷇ ⛃ 乚⇻ ⷇ ⛃⊩ ⱘⳂ ⫼䗨Пϔ——ITOⱘ ҷ 䴶䱋 њ㢺 DŽ ⬉ ⊩ 催DŽ ⬉ 㙵 䰇㛑⬉∴䗣 ⬉㝰ⱘ ԰ ⊩⬅⇻ ⷇ ⛃⊩ њCVD⊩DŽ 䖥ˈϡ㒣䖛⇻ 䖬 ㄝ 㡎Ⳉ ԰⷇ ⛃㉝ ⱘ г 㒣 ˄ 8˄d˅˅DŽ䖥ˈҎӀ ⦄њ ⫼⇻ ⷇ ⛃⊩⍖ 㡎ⱘ ⾡ ⫼乚 DŽ ЁПϔ 㭘㝰 䰇㛑⬉∴DŽ ㅵ⬅⷇ ⛃㉝ ⱘ㝰ⱘ⬉䰏 䕗 ˈԚ 䗄г ⫼㑶 㒓ⱘӬ⚍DŽ ㅵ䕀 ⥛ϔⳈ 㛑 催ˈԚ“ ԧ ⷇ ⛃㝰П䯈䆒㕂⬉ 䕧䗕 ⱘ䆱ˈг䆌㛑 ⼎ ϢITOⳌ ⱘ 㛑”˄ ⥝ ⷨお⫳䰶⧚ ⷨおϧϮ Ϟ䞢 ˅DŽϔ⾡⫼䗨 ԰Ў ԧㅵ ӊⱘ⬉ Փ⫼DŽ“ ӊ䕗 ˈ㗠Ϩ䞛⫼⬉ ˈ ϡ䳔㽕䗮䖛 ⬉⌕ˈ Փ⬉䰏 䕗 г✻ḋ㛑Փ⫼”˄Ϟ䞢˅DŽ ҟ㒡ˈϢ ԧ 㾺 ⱘ 㾺⬉䰏 㛑Ӯ↨䞛⫼㪌䬔 ⱘAu 䖬㽕ԢDŽ㋶ г ⊼⇻ ⷇ ⛃DŽ䆹 2010 9 В㸠ⱘ㄀71 ⫼⠽⧚ Ӯ ⓨ䆆ӮϞˈҟ㒡њ 䗮䘧 Ё䞛⫼䖬 ⱘ⇻ ⷇ ⛃ ԰ⱘTFT ԰ 㛑ㄝDŽ ㋶ ҟ㒡ˈ䕑⌕ 䖕⿏⥛ 䖒 0.2̚0.6cm2/Vsˈ䖭ϔ Ϣ ԧⳌ DŽ四、 石墨烯的应用前景：引言⺇ 㾦 㔥⢊䬂 ⱘ “⷇ ⛃” 㡆ⱘ⬉⡍ ǃ⛁⡍ ҹ Ẅ⡍ DŽ ԧ 䇈ˈ ⏽ϟг催䖒20ϛcm2/VsҹϞⱘ䕑⌕ 䖕⿏⥛ˈҹ 䖰䖰䍙䖛䪰ⱘ ⬉⌕ ⱘ㗤 DŽЎℸˈ⷇ ⛃ ⫼Ѣ催䗳 ԧㅵǃ㾺 䴶 ǃ 䰇㛑⬉∴⫼䗣 ⬉㝰ˈҹ ԢѢ䪰ԚϢ䪰Ⳍ↨ 䗮䖛 ⬉⌕ⱘ⬉㒓ㄝDŽ ˈ Ⳃ ҹ ԰ⱘ⠛⢊ Ёˈ⷇ ⛃ⱘ 㭘ǃ↨㸼䴶⿃г䕗 DŽ㗠Ϩˈ䖬 䍙䖛䞥 ⷇ⱘ ǃ ῵ ⛁⥛DŽ ≵ 㔎䱋ⱘ䆱ˈ ⷇ ⛃ˈгϡӮ䗮䖛 Ѣ⇺˄He˅ ⱘ⠽䋼DŽ䖭ѯ 䋼 ҹՓ⷇ ⛃԰Ў⬉∴ⱘ⬉ ǃ ⛁㝰ǃMEMSӴ ˈ ⧚ ⱘ䰏 㝰˄Barrier Film˅DŽϢ Ҫ Ⳍ↨ˈ⷇ ⛃䖬 䆌 Ў⡍⅞ⱘ 䋼DŽ՟ ˈ ⏽ϟг ⦄䞣 䳡 ˗ ⦄ Ў“Klein Tunneling”ⱘǃ䗣 ⥛Ў100ˁⱘ䗮䘧 ˗⬉䰏 Ў 㗠Ϣ䎱⾏ ⱘ“ 䘧䕧䖤”˄Ballistic Transport˅ⱘ 䎱⾏䕗䭓˗ ✻⬅⷇ ⛃Ϟⱘ㞾⬅⬉ 䗄Ё ⱘ ⿟ ˄䶺 ⿟ˈWeyl Equation˅ˈ⷇ ⛃ ҹ 䋼䞣Ў䳊ⱘ㉦ ϔḋ䖤 ˗㗠Ϩˈ⷇ ⛃ 㹿⿄Ў“䌱㞾 ˄Pseudospin˅” “䌱⺕ ”ⱘǃ ⬉ 㞾 ⺕ ⱘ⡍ ˗⷇ ⛃䖬 䋳 ⥛ˈㄝㄝDŽ䖭ѯ⡍ ҹՓ⷇ ⛃⫼Ѣ䍙催㊒ ⱘ⇨ԧӴ Ӵ ㄝDŽ ㋏ ҟ㒡 䰙 ⫼Ё ⫼⷇ ⛃ⱘ ⾡ 㡆 䋼 ⡍⅞ 䋼ⱘ ッ DŽ五、 应用前景（一）：“触摸面板”最快于2012年面世䆹✻⠛ ⼎њ⷇ ⛃ⱘ ⥛DŽ Ёˈ 䖍䚼 ⱘSiO2 ≵ 䌈⷇ ⛃ˈЁ䯈䚼 ⱘSiO2 Ϟ䌈 ⷇ ⛃ˈ 䖍䚼 ⱘSiO2 Ϟ䌈 ϸ ⷇ ⛃DŽ ҟ㒡 ⷇ ⛃ⱘ ⥛Ў2.3ˁDŽ✻⠛˖㣅 ⡍ ˄University of Manchester˅Ⳍ Ѣϔ ⷇ ⱘ ——⷇ ⛃ⱘⷨお ⧗㣗 ℷ⛁☿ DŽҙ2010 㸼ⱘⳌ ⷨお䆎䍙䖛њ3000㆛DŽ ЁЁ ⾥ 䰶 ゟ (the National University of SingaporeˈNUS) 䆎 䞣 䴶䖰䖰乚 Ѣ Ҫⷨお DŽ㗠⧚ Ϟ ϔ Ӭ ⱘ ⷨお Ѣ㢺 ПЁDŽ⫼ 䴶 乚 ⧗ⱘ 䶽 DŽ Ё䶽 ϝ ⬉ 㒣 㸼њ 乍 ⫼⷇ ⛃ⱘ㾺 䴶 催䗳 ԧㅵㄝⷨお DŽϝ Ⳃ ѻ ⱘゲѝ 䴶г Ѣ乚 ԡDŽ ⷇ ⛃㦋 2010 䇎䋱 ⠽⧚ ⱘⷨおҎ ϕ·䇎≗㙪⋯ ˄Konstantin Novoselov˅ ⚜·⍋ ˄Andre Geim˅ 䇎䋱 㦋 ⓨ䆆“Nobel Lecture”ㄝϞ㸼⼎ϝ 㒣 ⫼⷇ ⛃ⱘѻ 㕸 㪱 DŽ 㪱 Ёⱘ㄀ϔϾⷨ Ⳃ ⷇ ⛃⫼ 䗣 ⬉㝰ⱘ㾺 䴶 DŽ ϝ 䖬䅵 Ѣ2012 䜡 䆹⷇ ⛃ 㾺 䴶 ⱘ 㒜ッDŽϝ Ѣ2010 6 Ϣ䶽 佚 ˄Sungkyunkwan University˅ ԰ њ30㣅 ˄ 㾦㒓㑺76cm˅ⱘ⷇ ⛃⠛DŽ䖭ϔ⍜ Ҹ ⧗䳛 DŽ䖭 Ў ⦄ cm 㾦㒓 ⱘ⷇ ⛃⠛ϔⳈ ҎӀⱘṺ DŽℸ ⱘ ⷇ ⛃⠛ ҙ㛑䖒 㾦㒓Ў mm̚1cm˄䶽 ⦄њ cm 㾦㒓 ˅DŽⳌ Ѣ10 䞠 ⱘ亳 剰㝰䖭Ͼ ⷇ ⛃⠛ⱘ ԰ ⊩ ⾡ НϞ㉏ԐѢ䇎≗㙪⋯ 䞛⫼ⱘՓ⫼㉬ⴔ㛊 ⱘ“ Ẅ ⾏⊩”DŽ Ẅ ⾏⊩ ㉬ⴔ㛊 ˄ Փ⫼њScotch㛊 ˈ Փ⫼ⱘ ⱘ ϰ㛊 ˅䌈 ⷇ Ϟˈ✊ 䗮䖛 ϟ㛊 ⷇ ⛃䕀 㛊 ϞDŽ 佚 ㄝ ⱘ ⊩ 䞛⫼ ⱘ ҹCVD⊩ Ѣ䪰˄Cu˅ㅨϞⱘ⷇⛃⠛䕀 㛖⠛ϞDŽ䆌 ⷨおҎ Ҏ 䖭ϔ ⊩ ⭥ DŽ䖭 Ў“ 䆒⷇ ⛃ Ў10Njmⱘ亳 ⫼ 剰㝰ˈ䞛⫼䖭Ͼ ⊩ Ⳍ Ѣ㽕 10km㾕 ⱘ 䰽㝰 ㉬䌈ϟ ”˄ ⷨおҎ ˅DŽϡ䖛ˈ Ӏϡ㽕∖ ԧㅵϔḋⱘ䋼䞣ⱘ䆱ˈ 㾺 䴶 ⫼䗨Ё䕏 ⱘ㼊ⲅ ⸈ 㛑 ϡӮ䗴 DŽ 䆌 ҹ䇈ℷ Ў㾺 䴶 䳔㽕⒵䎇ⱘ ӊ䕗Ԣˈ Փ 㾺 䴶 Ў佪Ͼ Ⳃ DŽ✊ˈ ⷇ ⛃⫼Ѣ㾺 䴶 ⫼䗨 䴶䖬 Ͼ䇒乬DŽϔ ⬉ ⱘ⹂ ˄Doping˅ⱘ〇 DŽ 㛑 ≵ 㔎䱋ⱘ ⷇ ⛃⠛ˈ䙷М 䗣䖛⥛ 䖒 97ˁҹϞˈ Т 䗣 ⢊ ˈ 䖬 ⦄催 㾺 䴶 DŽ✊㗠⬅Ѣ㒃 ⷇ ⛃ⱘ䕑⌕ 䖕⿏⥛䕗催ˈԚ 䕑⌕ 䴲 ˈ ℸ⬅ϸ㗙Ь⿃ ⱘ ⬉⥛ 䕗催DŽЎњ㾷 䖭ϔ䯂乬ˈ䳔㽕 կ⬉ ⋲ⱘ 䋼ˈг 䇈䳔㽕䖯㸠 DŽ佚 ϝ ㄝ ⱘ ⷇ ⛃⠛⬅Ѣ ⱘ ⠽˄Dopant˅䱣ⴔ 䯈ⱘ⌕䗱Ӯ䗤⏤⍜ ㄝˈ ℸ ⬉⥛ⱘϡ〇 Ў䇒乬DŽ䖭ϔ䇒乬 Ҟ ⱘⷨお Ёќҹ㾷 DŽѻ㓐ⷨㄝ 䗴 ⊩ 䴶 䍋Ⳉ䗑⫼Ѣ㾺 䴶 ⱘ⷇ ⛃ 䴶ˈ ѻϮ 㓐 ⷨお гℷ 䆩 A4 ⱘ⷇ ⛃⠛ 㾺 䴶 DŽ Ӭ⚍ ѢϢ 佚 ⱘ ⊩Ⳍ↨㛑 䕗Ԣ⏽ ϟ ⷇ ⛃⠛ˈ㛑 䞛⫼ 䖯㸠 CVD ⱘ 䚼 DŽ䇕 ⥛ ⦄㾺 䴶 ⱘ ѻ˛䖭ϔ䯂乬 Ӯ ⱘ1̚2 㾷ㄨDŽ六、 应用前景（二）：2013年将实现以500GHz频率工作的高速石墨烯晶体管和光学元件䗮䘧 䞛⫼⷇ ⛃ⱘ催䗳 ԧㅵ 䴶 ⿃ ⱘӕϮПϔ 㕢 IBM DŽ䆹 Ѣ2008 њ㄀ϔϾ⷇ ⛃ ԧㅵˈ 2010 12 ⱘ 䰙 Ӯ“IEDM 2010”Ϟ њ 䭓240nmǃ ℶ乥⥛Ў230GHzⱘ⷇ ⛃FETㄝˈ Ⳍ ⷨ ⌏ ЁϔⳈԡѢ乚 ԡDŽϡ䖛ˈ 䖥 ϡ ゲѝ ℷ 䍋Ⳉ䗑IBMDŽ↨ 䶽 ϝ ッ ⷨお ˄Samsung Advanced Institute of TechnologyˈSAIT˅DŽSAIT IEDM 2010Ϟ њ ℶ乥⥛Ў202GHz˄ 䭓Ў180nm˅ˈⳈ䘐IBM ⱘ⷇ ⛃FETDŽ ˈ ѻϮ 㓐 ⷨお ǃ 䗮ⷨお ǃNTT⠽ ⾥ ⸔ⷨお 㕢 ⊶䷇ ˄Boing˅Ϣ㕢 䗮⫼ ⱘ ⷨお 㕢 ӥ ⷨお ˄HRL Laboratories, LLC˅ㄝӫ ⷨお ӕϮг䛑㒋㒋 њ ゲѝⱘ㸠 DŽ2 䯈 㛑 催10䰙ϞˈⳂ ⱘ⷇ ⛃ ԧㅵ ϡ 㞾IBM ǃгϡ 㞾ϝ ˈ㗠 㕢 ⋯ ⷊ ˄University of California, Los Angelesˈㅔ⿄UCLA˅ ԰ⱘ ԧㅵDŽUCLA ѢIEDM 2010П ⱘ2010 9 ljNatureNJϞ 㸼њ ℶ乥⥛Ў300GHz˄ 䭓Ў144nm˅ⱘ⷇ ⛃FETDŽ300GHzⱘ ℶ乥⥛ ҹϢ䞛⫼GaAs InPㄝ ⠽ ԧⱘ ԧㅵⳌ DŽϡ䖛ˈUCLAⱘ⷇ ⛃FET 䞛⫼ⱘ ӊ 䗴 ⬹ ⣀⡍ˈ՟ ⬉ 䞛⫼ҹAl2O3⍖㽚ⱘCo2Si㒇㉇㒓DŽ䆎 Ͼ 䖯㸠 ˈ Ҏ⊼Ⳃⱘ 䗳 䛑䴲 DŽ↨ ˈIBM 䭓150nmǃ ℶ乥⥛Ў26GHz ⱘ⷇ ⛃FET 2008 12 ⱘIEDMϞ ⱘDŽҢ䙷 䍋䖬ϡ ϸ 䯈ˈ ℶ乥⥛ 催њ10 DŽ 㒻㓁䖭ḋ ϟ ˈ 2011 Ё 䞛⫼ ⠽ ԧⱘ ԧㅵⱘ ℶ乥⥛ 㛑Ӯ䍙䖛600GHzˈ 2011 12 ˈ ℶ乥⥛ 㛑Ӯ 催 1THzDŽҹTHz乥⥛ ԰ⱘ ԧㅵ䖲 ⬉Ўԩ㒋㒋㟈 Ѣ ⫼⷇ ⛃ⱘ催䗳 ԧㅵ ˛ Пϔ Ѣ ҹTHz乥⥛ ԰ⱘ ԧㅵˈ 㛑 Փ䖘Ҟ 䴶 ϡ ⱘ⬉ ǃг ⬉ ⱘ ⦄ 㓱䖲 DŽ䖥ˈNECㄝ њ䗮䖛 Ў 䌿 ⊶ⱘ⊶䭓Ў0.1mm ⱘ⬉⺕⊶ ԰ Ӵ ㄝⱘ DŽ㱑✊ 䖭⾡ ϟ⬉⺕⊶乥⥛Ў3THzˈԚⳂ 䖬 㛑 ҹ䆹乥⥛ ԰ⱘ ԧㅵˈ ℸ ⫼Ѣ“ 䴶”ˈ ⹂ 䇈 㑶 㒓 䴶DŽϡ䖛ˈ⬅Ѣ԰Ў ӊՓ⫼ⱘ䕤 ⛁⌟䞣䅵(Bolometer)ⱘ 䯈䭓䖒10Njsˈℸϡ㛑 ⫼Ѣ“ 䌿 ⊶䗮 ”⫼䗨DŽ㽕 ⫼ 䌿 ⊶ ⱘ┰ 䞣ˈ 䳔㽕㛑 ⬉ ⬉䏃ϔḋ THz乥⥛ϟ ԰ⱘ ӊǃ ⬉䏃 ⧚⬉䏃DŽ Пˈ 㛑 ⦄䖭Ͼ ӊˈ䍙䖛↿㉇⊶䗮 ⱘ G̚ ⱒGbit/⾦ⱘ䍙催䗳䗮 Ў 㛑DŽ⿃ 䖯㸠䖭ϔ 䴶 ⱘⷨお Пϔ 㕢 䰆䚼催㑻ⷨお䅵 ˄DARPA˅DŽDARPA Ў“Carbon Electronics for RF Applications˄CERA˅”ⱘ乍ⳂЁˈ њ 2013 ⦄ҹ500GHz乥⥛ ԰ⱘ⷇ ⛃FETⱘ ⫼ ⱘⳂ DŽ㽕Փ ԰乥⥛䖒 500GHzˈϔ㠀 ϟ ℶ乥⥛䳔㽕䖒 3 ǃг 1.5THzˈϡ䖛Ң䖘Ҟ⷇ ⛃FET ⦄ ⱘ催䗳 ⳟˈ ⦄ 㛑 䴲 DŽ⫼Ѣ ӊ䴲 ˛䰸催䗳 ԧㅵ ˈ⷇ ⛃԰Ў 䴶ⱘ г ⱘ ⫼ DŽ ԧ 䇈ˈ ⌏ 䞛⫼⷇ ⛃ˈ ㋿ 㒓ǃ 㾕 ǃ㑶 㒓 䌿 ⊶ 䴲 ⱘ⊶䭓ⱘ▔ 㤵 䍞 䍞 㛑DŽ㱑✊ℸ Џ㽕 䅼ⱘ ԰Ў 䴶 ⱘ ⫼ˈϡ䖛г ⷨおҎ 㿔“㱑✊ ⷇ ⛃ ԧㅵ⫼䗨 䴶䖬 ϔѯ䇒乬ˈԚ԰Ў ӊ 䇈 Тϡ ҔМ䇒乬”˄ ϰ ⬉⇨䗮 ⷨお 䖏⋄ϔ ˅DŽ䖭ϔ乚 Ⳃ г 䴲 ⱘⷨお ⿃ 䖯 DŽ Ё ϰ ǃ㣅 ḹ ⋟⧚ (Nanyang Technological University)ㄝⳂ ⷨ 䴶 Ѣ乚 ԡDŽ䰸 ԧㅵП ˈ ӊㄝг㛑⫼⷇ ⛃ ԰ˈ 䑿 䳔 Փ⫼催Ӌ ⠽ ԧˈ 䖬 䰡Ԣ Ͼ ӊⱘ DŽ七、 应用前景（三）：“太阳能电池”——石墨烯成为大幅提高转换效率的王牌材料⷇ ⛃㹿 ќ ⱘ ⫼ ՟Пϔ 䕀 ⥛䴲 催ⱘ ϔҷ 䰇㛑⬉∴DŽ Ҟ ⱘ ⫼乚 ˈ佪 䗣 ⬉㝰乚 ˈ ⃵ Ё䯈⬉ ㄝ乚 DŽϡҙҙ ҷ ITOѢ⷇ ⛃ 䗣 ⬉㝰ˈ㾺 䴶 䰉㧹ⱘ ↨䕗催ˈϡ䖛 䰇㛑⬉∴ ⱘ 㛑 催DŽ䖭 Ў⷇ ⛃ϡҙ ҷ ITO 䴶ⱘ 㛑 䕗催ˈ㗠Ϩ ⷇ ⛃䗣 ⬉㝰 㛑 ⦄ Ѣ 䰇㛑⬉∴ 䇈䴲 䞡㽕ⱘ⡍ DŽ䖭Ͼ⡍ Ѣ Ё䖰㑶 㒓 ⱘ 㑶 㒓ⱘ催䗣 DŽ ㅵ㑶 㒓 њⳌ ϔ䚼 ⱘ 䰇䕤 㛑䞣ˈԚ⦄ ⱘ 䚼 䰇㛑⬉∴䛑 ⊩ 㑶 㒓԰Ў㛑䞣⑤ ⫼DŽ䖭 Ў䰸њ ⱘ ⬉䕀 䑿ϡ ⦄П ˈ䖘Ҟ ⫼Ѣ䗣 ⬉ ⱘITO FTO 㑶 㒓ⱘ䗣 ⥛ 䰙Ϟг↨䕗ԢDŽ㽕 Ѣ㑶 㒓⹂ 䗣 䎇 њⱘ䆱ˈ ⱘ ϡ 䲒DŽϡ䖛ˈ䖭⾡ ⧚ϞӮ䴶Ј ⬉⥛ 䰡Ԣⱘ䯂乬DŽ⧚⬅ ϟ˖ ϔ㠀 ϟ㽕⹂ 㣗 ⊶䭓乚 ⱘ䗣 ˈ䕑⌕ ⱘ 䍞Ԣ䍞 DŽϡ䖛ˈ⬅Ѣ ⬉⥛Ϣ䕑⌕ 䖕⿏⥛ 䕑⌕ ⱘЬ⿃ ↨՟ˈ ℸ 䕑⌕ 䖕⿏⥛ϡ 催ˈ䙷М䕗 ⱘ䕑⌕ г ⴔ ⬉⥛䕗 DŽ ⼎՟ ⦏⩗䖭⾡㒱㓬ԧDŽ 䆎 䗣 ˈ 㽕⬉⌕ϡ㛑䗮䖛ˈ ≵ ӏԩ НDŽ⷇ ⛃ Т ϔϔ⾡㛑 䙓 䖭⾡䯂乬ⱘ DŽ Ѣ⷇ ⛃ 䴲 催ⱘ䕑⌕ 䖕⿏⥛DŽ ℸˈ Փ䕑⌕ 䴲 ˈг㛑⹂ ϔ ⱘ ⬉⥛DŽ䖭⾡ 䴲 㔩㾕ⱘDŽ䍙催 䰇㛑⬉∴ⱘ ⦄䖥䖥 ѯⷨお ℷ ⿃ 䖯㸠 ⬉䕀 ⱘ ˈϔѯ㑶 㒓催 䕀 гⳌ㒻䴶Ϫ˄ 䯙 キ 䘧˅DŽ䖭ḋϔ ˈ ҹ ⫼ 㑶 㒓䗣 г䕗催ⱘ䗣 ⬉㝰ˈ䙷М ⦄䖰䖰䍙䖛⦄ 䰇㛑⬉∴ⱘ䕀 ⥛DŽⳂ ˈ 䖭ѯ ⌏ Ё Ѣ乚 ԡⱘ Пϔ ⬉ 㙵 Ӯ⼒DŽ䆹 Ⳃ ℷ 㛑⑤ѻϮ 㓐 ˄NEDO˅ⱘ“䴽 䰇㛑 ⬉ ⷨお ”乍ⳂЁˈ⿃ 䞛⫼⷇ ⛃ⱘ 䰇㛑⬉∴⫼䗣 ⬉㝰DŽϡ䖛ˈ ⬉ џ Ϟ 㒣 њ䖘ҞϔⳈ ⷨ ⱘՓ⫼⇻ ⷇ ⛃ ԰⷇ ⛃⠛ⱘ 㡎˄ 䯙 キ 䘧˅DŽ ԰Ў ҷ ⊩ њϝ ㄝг䞛⫼ⱘ⛁CVD⊩DŽ䗮䖛ϔ㋏ 㞾Џ 䖯 ⱘ2 ⷇ ⛃⠛ⱘ“ ⬉⥛ 催䖒ITOⱘ ˈ Ϩ㛑 ⹂ 90ˁⱘ 䗣 ⥛ㄝˈ 㒣䖒 㛑 ⒵䎇 㛑 ⱘ∈ ”˄ ⬉ ˅DŽ㾷 ⱘ䇒乬 䞣ѻ 䯂乬DŽ“ Ӏ 㛑䰡ԢCVD⊩ⱘ 㡎⏽ DŽ 䳔㽕⹂ゟ䆹 ⊩Ё Փ⫼ⱘ䪰ⱘ ⫼ 㡎DŽ ˈ䖬䳔㽕⹂䅸Ϣ 䰇㛑⬉∴ ԧ ⱘⳌ ㄝ”˄ ⬉ ˅DŽ԰Ў⬉ ぎえϸ㗙ⱘӴ䕧⷇ ⛃ 䰇㛑⬉∴⫼䗨 䴶㹿 ќ ⱘϡҙҙ Ϣ 䰇 ⱘ䗣 ⬉ DŽ ԧ П䯈ⱘЁ䯈⬉ 䴶ⱘ ⫼Ⳃ гℷ 䅼ПЁDŽ⷇ ⛃ 㛑 ⱘ乚 㭘㝰 䰇㛑⬉∴乚 DŽ佪⃵ ⾏ ⷇ ⛃ⱘ㣅 ⡍ ⷨおҎ ϕ·䇎≗㙪⋯ ˄Konstantin Novoselov˅ lj 㒣⬉ NJ 䞛䆓 㸼⼎“ 㭘㝰 䰇㛑⬉∴ 䖥⷇ ⛃ ⫼ ⱘ ⫼Пϔ”DŽ䰇㛑⬉∴ЁՓ⫼⷇ ⛃԰ЎЁ䯈⬉ ⱘӬ⚍ 䗣 ϨϢ ԧ ⱘⳌ 䕗催DŽ⡍ Ё䯈⬉ 㽕∖ 䖭ϸϾ 䋼DŽ ԧ 䇈ˈ“Ϣ˄䖘Ҟ 䘡⫼ Ё䯈⬉ ⱘ˅TiO2/PDOTⳌ↨ˈ⷇ ⛃⬉ Ϣ ԧ ⱘⳌ ”˄ ⥝ Ϟ䞢 ˅DŽ䖭ϔ 䴶ˈ⷇ ⛃Ё⬉ ぎえⱘ䕑⌕ 䖕⿏⥛Ⳍㄝ䖭ϔ 䋼г԰ њϔ 䋵⤂DŽҹ ˈЁ䯈⬉ ϔ㠀䞡 Փ⫼n p ϸ⾡ DŽ⬅Ѣ⷇ ⛃ n p ˈ ℸҙ䳔1 ⷇ ⛃ 㛑 ҷ ⱘ DŽ八、 应用前景（四）：“新一代蓄电池和氢吸附材料”——梦想已久的大容量大功率即将实现？Ѣ⷇ ⛃ˈ⦄ ℷ ⴔ䗮䖛Ϣ Ҫ ⱘ⏋ Փ⫼ˈՓ ⾡ ӊˈ⡍ 㛑⑤Ⳍ ӊⱘ 㛑 ⦄亲䎗 催DŽ ԧⱘ ⊩ ˈ ⷇ ⛃⏋ 䫖⾏ ⬉⬉∴ⱘ⬉ 㗙 㭘㝰 䰇㛑⬉∴ⱘ ԧ Ёˈҹ 催 㛑DŽⳂ 䖭ѯⷨお ⍋ Ўⲯ㸠DŽ ˈ⷇ ⛃䖬 ⇶ 䰘 ⱘⷨお 䈵DŽ䗮䖛⏋ ⷇ ⛃ 催 㛑䖭ϔ ⊩ⱘ⧚䆎ḍ ˈ ϡ ⹂DŽ ˈ䆌 ⷨおҎ ⳟ ⷇ ⛃↨㸼䴶⿃䴲 䖭ϔ⚍DŽ ԧ 䇈ˈ⷇ ⛃↨㸼䴶⿃Ў2600̚2700m2/gˈ↣1g ⷇ ⛃ Ⳍ Ѣ 㑺50m㾕 ⱘ㭘⠛DŽ䗮 Ѣ⬉∴ㄝ ⫳ⱘ㸼䴶⿃ ԧ䯈 䴶⿃䍞 ˈ ⫼ ⥛ 䍞催ⱘѻ 㗠㿔ˈ≵ ⧚⬅ϡ ⫼⷇ ⛃䖭ϔ⡍⚍DŽp n ԧ 㾺䴶⿃ⱘ 㛑ⱘ 㭘㝰 䰇㛑⬉∴乚 ˈ2010 㒣 乍 ⿄䗮䖛 ԧ Ё⏋ Փ⫼⷇ ⛃Ң㗠 催њ䕀 ⥛ⱘⷨお ՟DŽ䗳 ⬉乚 ˛䫖⾏ ⬉⬉∴乚 ˈ ⱘԣ ⬉ ǃ㕢 ⱘ ゟⷨお PNNL˄Pacific Northwest National Laboratory˅ㄝˈг㒋㒋 䖯㸠䚼 䚼⬉ Ё ⫼⷇ ⛃ⱘⷨおDŽ⡍ ⬅Ѣ䫖⾏ ⬉⬉∴ⱘ䋳 䆌 ϟ䞛⫼њ⷇ ˈ ℸ↨䕗 Ў⷇ ⛃ˈ䖭г ⷇ ⛃ ⊼ⱘ⧚⬅ПϔDŽ䖘ҞЎℶⱘ䆩 ՟Ёˈ Ͼ ϡ 䫖⾏ ⬉⬉∴ⱘ 㛑䞣 ⱘ ϟ 催њ䕧 DŽ 乘⌟⿄“ ⱘ䫖⾏ ⬉⬉∴ 䩳 ⒵⬉”˄ PNNL կ⷇ ⛃ⱘ㕢 ≗䋱 ˄Vorbeck Materials˅˅DŽGrapheneˈGraFaneˈGraphane…䰸њ䞛⫼㒃⷇ ⛃ ˈ 䱭 ⬉⥛ㄝ Ҫ⡍ 㛑㗠 ԰ⱘ⷇ ⛃“҆ ”г 䖙䗳 DŽ䆌 ⠽䋼 㒣 њ ⿄DŽ ԧ Փ⷇ ⛃⇻ ⫳ ⱘ“⇻ ⷇ ⛃”ǃ ⷇ ⛃˄Graphene˅Ё⏏ ⇶ՓП ⺇ ⇶ϔḋⱘ“Graphane”DŽ⏏ њ⇳ⱘ“⇳ ⷇ ⛃˄Fluoro Graphene˅” “GraFane”Ⳃ 㒣㹿㕢 䙺 ˄Dupont˅ њ⇳ ⺇ 㛖“Teflon˄⡍ 啭˅”ⱘ2㓈㭘⠛DŽ⷇ ⛃ⱘ ⫼㣗 П ҹ䇈 ⊩Ԅ䞣ⱘDŽ附一、充分利用石墨烯及量子点，新一代器件纷纷发布䯾 ㄝ䆩 ⱘ䞥 ⷇SBD2010 9 14̚17 Ѣ䭓 В㸠ⱘ“2010 ⾟ ㄀71 ⫼⠽⧚ Ӯ ⓨ䆆Ӯ”Ϟˈϡ Ѣҹ Si⬉䏃 Ԍⱘ ⬉䏃 ӊ㒋㒋 ⊼1˅DŽ ԧ ķ⌏ ㄝ ⫼⷇ ⛃˄Graphene˅* ⺇㒇㉇ㅵ˄CNT˅ˈҹ⫼Ѣ䍙催䗳 ԰ 䴶⿃⫼䗨ЎⳂ ⱘ ԧㅵǃĸԢ 㗫Ϩ㛑 催⏽ ԰ⱘ䞥 ⷇Ѡ ㅵǃĹЎ ⦄“ LSI”㗠䕧 䕧 ⱘ“ 䘏䕥䮼”ㄝ⬉䏃 ӊDŽ⊼1˅ℸ ˈϢ 䰇㛑⬉∴Ⳍ ⱘ 䍙䖛150乍ˈ ⦄ њ 䍟 DŽ“ ⠽ 䰇㛑⬉∴” Ӯг佪⃵ 䆒DŽ*⷇ ⛃˙Ⳍ Ѣ⷇ Ёⱘϔ ⱘ⺇ DŽ2004 ⡍ ⷨおҎ ⦄ˈ䗮䖛 䪙ヨ㢃Փ⫼ⱘ⷇ Ϟ㉬䌈⦏⩗㒌 ϟˈ ⷇ ⛃DŽ 䖥 䖬 ⫼⇨Ⳍ⫳䭓⊩ㄝ䖯㸠 䗴ⱘ∈ DŽԧ⺇ Ϟ 䖯Ϣ⷇ ⛃ CNTⳌ ⱘⷨお ⓨ䆆 䍙䖛њ㑺130乍DŽ⡍⚍ Ё 䰙䆩 ԧㅵⱘџ՟ ⦄ ˄㸼1˅DŽ 㚠 ѢϔⳈ㹿 䅸Ў 䱭Ϩ 䞥 ⡍ ⱘ⷇ ⛃ 䞡 ϸ Ӯѻ⫳ 䱭ˈҢ㗠 ԧ⊼2˅DŽ ˈ CNT˄SWCNT˅ⱘ䆱ˈ ⾏ ԧ SWCNT 䞥 SWCNTⱘ Ϟ њ䖯 ⊼3˅DŽ⊼2˅ ⧚䆎Ң2006 䍋ЎҎ ⶹˈ2009 6 ⦄ 䰙䆩 џ՟ ˈ ⷇ ⛃ゟ 䍋њ ⊼DŽ⊼3˅⬅ѻϮ 㓐 ⷨお Ѣ2009 3 DŽℸ⃵䆩 ⱘ䞛⫼⷇ ⛃ CNTⱘ ԧㅵˈ 䗴 㡎 䆒 ⱘ⫼䗨䴲 ⊯ˈ䖭г ⡍⚍ПϔDŽ↨ ˈ 』⬄ ネ ㄝⱘⷨお 㒘ҹ ⫼ 䖯㸠 䗴ЎⳂ ˈ䗮䖛⫼ ⊩Ⓢ㨑 CNTˈ䆩 њTFTDŽ㗠Ϩ䖬 㒱㓬 ЁՓ⫼њ⾏ ⎆ԧDŽ 䖭ѯ ↉ˈ ⫼Ϣ⬉ ⬉ Ⳍ ⱘ ⧚ˈՓ ԧㅵⱘ䴭⬉ 䞣 њ DŽ ˈ䕑⌕ ⌧ г 催ˈI-V˄⬉⌕-⬉ ˅⡍ Ё 䘡 ⱘ⡍ ⒲ ⦄䈵 ⍜ ˈ Ϩ偅 TFT ⱘ⑤ Ϣⓣ 䯈⬉ V SDг䰡 њ 䳔-1Vⱘ∈ DŽV SD ҙЎ ⱘ1/50ҹϟDŽ㋶ 㸼њҹ ㅔ 䗴⷇ ⛃ ԧㅵЎⳂ ⱘ DŽ䆹 ⫼䗮䖛㘮䲚⇻ ⷇ ⛃ ⠛ ⱘ“ϔ⾡ 㒧 㝰”˄㋶ ˅ˈ䆩 њ ԧㅵDŽℸ ˈ ⺇ 䖭ϔ⚍ϞϢ⷇ ⛃ㄝⳌ ⱘ䞥 ⷇ ԧⱘⷨお г DŽ↨ ˈ 䯾 ϢѻϮ 㓐 ⷨお 䆩 њ催䗳 ԰ⱘ䞥 ⷇㙪⡍ Ѡ ㅵ˄SBD˅ˈ Ẕ⌟њ ⡍ ˈ䆕 ⏽ ձ 䴲 DŽ ˈ ԩ 䗴 г 䞥 ⷇ ԧⱘ䞡㽕䇒乬DŽ 䖭ϔ 䴶ˈѻ㓐ⷨ㸼⼎“䆩 њ1㣅 ⱘ ⢊ ”ˈAGD г ⿄“䗮䖛 ⫳䭓䖬 ⦄2㣅 ”DŽԚ ϔ 䇒乬DŽϔⳈ 䞥 ⷇ 㒧 ⱘEDP ˖“⬅Ѣ㒧 ⫳䭓䕗Ў㓧 ˈ ℸ2㣅 Փҹ〇 ∈ 䖯㸠䞣ѻˈ1 г䳔㽕㢅䌍 ϛ DŽ”⫼ ԰ⱘ䘏䕥⬉䏃ϔ 䴶ˈ䖬 ⷨお 㒘 њϡ䳔㽕Siǃ⫮㟇䖲⬉гϡՓ⫼ⱘ⬉䏃 ӊDŽϰҀ ⋹ ϔⱘⷨお ǃ 䫟 䗮 ⷨお ˄NICT˅䆩 њ 㽕䕧 ˈ Ӯ 䘏䕥Ϣ 䘏䕥䴲䖤ㅫ 䕧 ⱘ 䘏䕥䮼 ӊDŽ ˈϰ㡱 㕢㛑䖒г Ϣњⷨ ˈԚℸ⃵ 䖯㸠 DŽⳂ 䴴 ԰ⱘLSIDŽ 䞡㽕ⱘϔ⚍ Փ⫼“䖥 ”DŽ 䗮ⱘ ⧚Ϟ ⊩Փ⫼ ↨⊶䭓 ⱘ ⊶䏃 ӊDŽ 䰙Ϟˈҹ䗮 ⫼ⱘ⊶䭓1.5Njmⱘ㑶 㒓 䇈ˈ 㒚 ⱘϟ䰤 Ў2̚3NjmDŽ䖭 ⬉䏃 ⷨ 䲚 ǃ 㒚 Ϟ䲒ҹ 䖯ⱘ DŽϡ䖛ˈϰҀ ㄝ㸼⼎˖“Փ⫼䖥 ⱘ䆱ˈ䖬 ⦄ϡձ Ѣ⊶䭓ⱘǃ Ϣ nmⱘ⬉䏃 ⱘ ⬉䏃 ӊ”˄ 1˅DŽ ℸˈ䰸њ䘏䕥䖤ㅫ ӊП ˈℸ⃵䖬 њ 䗮 Ϣ䖥 䖲 䍋 ⱘ 㒚䗣䬰ˈҹ Փ䖥 䗮䖛ⱘ 㒚 ⊶䏃ㄝDŽ㗫 ⫼⬉ ԰ ⱘϛ Пϔℸ⃵ϰҀ ㄝ ⱘ䘏䕥Ϣ 䘏䕥䴲䖤ㅫ ӊ䞛⫼GaAs ˈ ЁⱘϞϟ 䜡㕂њ1Ͼ⬅InAs ⱘ⿄Ў“䞣 ⚍”ⱘ ԧ ㉦ ˄ 2˅DŽ 䗴 㡎䞛⫼ 㒓 ⊩˄MBE˅DŽℸ⃵ Ў20Njm×20Njmⱘ Ϟ 㑺400Ͼ䖭ḋⱘ ӊ њ䰉 ⢊DŽ䘏䕥䮼ⱘ ԰ ⧚ ⫼ Ϟϟ ⱘ䞣 ⚍П䯈ѻ⫳㛑䞣Ѹ ⱘ⦄䈵˄ 3˅DŽ䆹㛑䞣Ѹ ⱘҟ䋼 䖥 DŽ1˖⫼䖥 ⦄ 㒚 䘏䕥⬉䏃䗮䖛Փ⫼䖥 ˈ さ⸈ҹ ⬉䏃 㒚 Ϟ ⱘ䱰⹡ˈҢ㗠 ⦄ 䖰䖰 Ѣ⊶䭓ⱘ ӊ ⊶䏃DŽℸ⃵⬅ϰҀ 䫟䋳䋷䘏䕥䖤ㅫ ӊⱘ ˈ⬅ϰ㡱䋳䋷䖥 ⊶䏃ⱘ ˈ⬅ 㕢㛑䖒䋳䋷 䗣䬰ⱘ DŽ2˖䆩 ⏽ϟ ԰ⱘ䞣 ⚍䘏䕥䮼䰉ℸ⃵䆩 ⱘ 䘏䕥䮼䰉 䞛⫼↣Ͼ ӊ㒉 ϸϾ⬅InAs ⱘ䞣 ⚍ⱘ 䗴DŽ ӊⱘ ⥛㑺Ў70ˁDŽ 㛑ⱘ ӊҹ 1/2ⱘὖ⥛ 䘏䕥Ϣ䮼 䘏䕥䴲䮼ˈ䖯㸠 ԰DŽ ḍ NEDOⱘ䌘 DŽ✻⠛⬅NEDO կDŽ3˖䆕 䖯㸠䘏䕥䴲 ԰䕧 ԰Ў ⸔ⱘ ˈ㗠ϡ䕧 䕧 ⱘ ⱘ⢊ ϟˈϟ ⱘ䞣 ⚍Ӯ ⸔ ѻ⫳ ˈ ϔ 㛑䞣ⱘ䖥 ˈ ҹ⬅ℸ ⱘ⊶䭓䖯㸠 ˄a˅DŽ ℸ䕧 ⊶䭓Ϣ ⸔ ϡ ⱘ䕧 ⱘ ⱘ䆱ˈϸϾ䞣 ⚍ⱘ䖥 Ӯѻ⫳ ˈՓ㛑䞣Ңϟ Ϟ⿏ ˈҢ㗠ϡ䕧 ⱘ䕧 ˄b˅DŽ ḍ NEDOⱘ䌘 DŽ✻⠛⬅NEDO կDŽ⫼䖭⾡䗮䖛 ԰ⱘ䘏䕥䮼ⱘ Пϔ 㗫䴲 DŽ⬅Ѣ䖥 ⧚Ϟϡ 䕀 Ў⛁㛑ˈ ℸ 㗫䴲 DŽ“1Ͼ ӊⱘ㛑㗫Ў24NjeVDŽ䖭ϔ ⫼⬉ ԰ⱘ ԧㅵㄝⱘϛ Пϔ ”˄ 䫟ㄝ˅DŽϰҀ ㄝⷨお 㒘 㛑⑤ ѻϮ 㓐 ˄NEDO˅ⱘ ϟҢ2006 䆹 ӊ ⱘDŽϡ䖛ˈ 䞣 ⚍ⱘ㒧 䋼䞣䕗Ԣˈ ℸ 䆕 㛑 䖯㸠䘏䕥䴲䮼ⱘ ԰DŽ Ϩ 㛑 100K ҹϟ Ԣ⏽⦃ ϟ ԰ˈ䕧 ⱘ 䕗 Ϩϡ〇 DŽ㗠ℸ⃵䗮䖛Ӭ 䆒䅵ҹ 催㒧 䋼䞣ㄝ ↉ˈ佪⃵ ⦄њ ⏽˄300K˅ϟ䖲 䘏䕥Ϣ ԰ ⱘ〇 ԰DŽ䘏䕥Ϣ䮼Ϣ䘏䕥䴲䮼 ӊ ⫼䞣 ⚍ⱘ䜡㕂 䞣Ϟ Ⳍ DŽϸ㗙 ԰Ϟⱘϡ “⬅䞣 ⚍ⱘ 㒘 ”˄ 䫟˅DŽԚ⦄ 䖬 ⊩⹂ 䘏䕥Ϣ䮼 䘏䕥䴲䮼DŽ“ϔϾ ӊ 35ˁⱘὖ⥛ 䘏䕥Ϣ䮼ˈ 35ˁⱘὖ⥛ 䘏䕥䴲䮼DŽ㗠 ԭⱘ30ˁ Ўϸ㗙䛑ϡ ⱘϡ㡃 ӊ”˄ϰҀ ˅DŽϡ䖛ˈ“Ⳃ 㛑 ⍜䰸ϡ㡃 ӊⱘ ㄪϞ њⳝⳂ”˄ 䫟˅DŽℸ⃵ⱘ ӊ䖯㸠 䕧 䞛⫼ ӊϞ䜡㕂ⱘ䞥˄Au˅ ㉦ ✻ 㒓ⱘ ⊩DŽ 䅵 ⦄㒣⬅䖥 ⊶䏃Ⳉ 䕧 䕧 ⱘ䆒䅵DŽ“Ⳃ ℷ Ў ⦄䖭ϔⳂ 㗠〇ℹ 䖯 䗣䬰 䖥 ⊶䏃ⱘ ”˄ϰҀ ˅DŽ“ 10 ⱘ2020 ⦄ LSIDŽ⦄ 䍄 ⸔ⷨお䰊↉”˄ 䫟˅DŽ 㛑 䅵 乎 䖯ˈ ⦄⬅ 䗴ⱘ ⬉䏃DŽ附二、 2010年诺贝尔物理学奖授予石墨烯发明者，广泛应用于半导体及透明电极⨲ ⱛ ⾥ 䰶2010 10 5 њ2010 䇎䋱 ⠽⧚ ⱘ䆘䗝㒧 DŽ㦋 ⱘ կ㘠Ѣ㣅 ⡍ ㄝ Ͼⷨお ⱘ 㔫 ㈡ ⚜·⍋ ˄Andre Geim˅ ϕ·䇎≗㙪⋯ ˄Konstantin Novoselov˅DŽϸҎ 2004 ⦄њ䗮䖛ㅔ ⱘ ⊩ ⷇ ⛃ˈП 䆹⠽䋼ⱘ 䋼԰ 䋵⤂DŽ⷇ ⛃ ϔ⾡⺇䋼 ˈⳌ Ѣ⬅ ⺇㭘⠛ ⱘ⷇ Ёⱘϔ DŽ䇎≗㙪⋯ ⍋ 2004 ⦄䗮䖛ㅔ ⱘ“ Ẅ ⾏⊩˄Mechanical Exfoliation˅” ⷇ ⛃DŽℸ ⊩ “Scotch㛊 ”㉬䌈 ⷇ Ϟˈ䗮䖛 ϟ㛊 ⷇ ⛃DŽ ⠽⧚⡍ 䖯㸠њ䆺㒚ⷨおDŽ⷇ 䖬 ⫼ 䪙ヨ㢃ㄝˈ ⫳⌏Ё䱣 㾕ⱘ DŽԚ⷇ ⛃ϡҙҙ “ϔ ⷇ ”ˈ㗠Ϩ ⡍⅞ⱘ⠽⧚⡍ ˈ䖭 2006 ⧚䆎Ϟ㹿䆕 DŽ՟ ˈ⷇ ⛃Ϟ⌕ ⱘ⬉ ԰Ў 䞡䞣ⱘ㉦ 㗠 ˈҹ ϔ ⷇ ⛃ 䞥 ⡍ ǃ 催ⱘ䕑⌕ 䖕⿏⥛ㄝDŽ ϔ 䴶ˈ⷇ ⛃Ўϸ Ў 䱭ⱘ ԧDŽ⷇ ⛃↨⺇㒇㉇ㅵ ⠽⧚ 㗙ⱘ 䍷ˈг 㛑 ℸ⃵㦋 ⱘ㚠 DŽ2009 7 㕢 ԃ ˄University of California, Berkeley˅ⱘⷨおҎ ǃ2010 1 㕢 IBM 䆩 ϸ ⷇ ⛃⫼ ≳䘧 ⱘ⬉ ԧㅵ˄FET˅ˈ ⹂䅸 ԰Ў ԧՓ⫼DŽҢ䙷 ˈ 䆩䖯㸠⷇ ⛃ ԧㅵ ⱘⷨおҎ DŽ 䗮 NEC 䆩 䆹 ⫼Ѣ ԧˈ 䖥㋶ г њ⷇ ⛃ ԧㅵⱘ DŽ⷇ ⛃ г ⼎ 䰇㛑⬉∴乚 Փ⫼ⱘ䗣 ⬉ ⱘ 㑻 ҷ DŽ՟ ˈ2010 6 ⺇㒇㉇ㅵ㗠䯏 ⱘ䶽 Sungkyunkwan University˄ 佚 ˅ǃ ⱘ佁 ╘⬋ ǃ䶽 ϝ 䲚 䆎 Ё 㸼њ Ѣ30㣅 䴶⿃⷇ ⛃⠛ⱘ ԰ ⊩DŽ ⱘ亢䰽ӕϮ—— 㒇㉇⺇ 䖥㸼⼎ˈ“䞛⫼Ϣϝ ϡ ⱘ ⊩ˈ 㒣 ҹ〇 1cm㾕 ⱘ⷇ ⛃⠛”DŽ附三、石墨烯诺贝尔奖获得者访问日本，“双层石墨烯其载流子迁移率也可超过100万”ϕ·䇎≗㙪⋯ 㸼ⓨ䆆DŽˈ ⾏ 㭘㝰⢊⺇ “⷇ ⛃”㗠㦋 2010 䇎䋱 ⠽⧚ ⱘ㣅 ⡍ ⷨお ϕ·䇎≗㙪⋯ ˄Konstantin Novoselov˅ њ DŽҪ 2011 1 5̚7 Ѣ ⥝ ⱘ⧚ ⷨお В㸠ⱘⷨおӮϞ 㸼ⓨ䆆 ˈ“ϡҙ ⷇ ⛃ˈ ⷇ ⛃ⱘ䕑⌕ 䖕⿏⥛г㛑䖒 106cm2/Vs”DŽℸ⃵ⱘⷨおӮЎ“Frontiers in Nanoscale Science ˂ Technology˄FNST 2011˅”DŽ⬅ ϰҀ ǃϰ ǃ⨲ 䱚 ˄Lund University˅ǃ㕢 ԯ ˄Harvard University˅ǃNTTҹ ⧚ⷨ㘨 Џ ˈ 䅼䆎䞣 ⚍ǃ㞾 ⬉ ԧ⠽ ⱘ ⊓ DŽ䇎≗㙪⋯ ⦄ 36 DŽ 1974 ҹ 䕏ⱘ䇎䋱 ⠽⧚ 㦋 㗙DŽ䇎≗㙪⋯ ⷨおӮ ⱘⓨ䆆Ёҟ㒡њ 乍 ⷇ ⛃⡍ ⱘⷨおDŽ䖥ˈ ⷇ ⛃ǃ ǃ3 ǃN ⷇ ⛃ˈҹ ⷇ ԩϡ ⱘⷨお 䗳䖯 DŽ ˈ Փ Ў ⷇ ⛃ˈ ⷇ ⛃П䯈ⱘ䞡 ⊩ϡ ˈ ⫳䫭ԡˈ㛑 䗴ㄝӮ ԩ ⱘⳌ ⶹ䆚г Ⲟ DŽ䇎≗㙪⋯ 䖭ѯ㽕⚍ˈⴔⴐѢ䋱 Ⳍԡ˄Berry's Phase˅䖭ϔ ԩ Ⳍԡˈ䅼䆎њ 䖥ҹ ⷇ ⛃ЎЏⱘ 乍ⷨお DŽ԰Ў䇎≗㙪⋯ ⷨお 㒘 䖥ⱘ ˈ њ⷇ ⛃ḋ 㛑 䖒 䴲 催ⱘ 䋼ˈ䕑⌕ 䖕⿏⥛ ⦄њ亲䎗 催DŽӫ ⶹˈҹ ⷇ ⛃ⱘ䕑⌕ 䖕⿏⥛ 㛑䖒 ϛcm2/VsҹϞDŽ≗㙪⋯ ⿄ˈ 催ḋ 䋼 ˈ Փ ⷇ ⛃ˈг 䕏 ԰ 䕑⌕ 䖕⿏⥛䖒 106cm2/Vs㑻ⱘḋ DŽϡ䖛ˈ䖭 ϡ 㾺 ⱘ ϟ ⷇ ⛃ ⱘ㒧 DŽ⷇ ⛃ ⬉ Ӯ ԧˈ ℸ԰Ў䍙催䗳FETⱘ≳䘧 㗠 DŽϡ䖛ˈ г Ҏ 䞡 Ў Ӯ ԰Ў⷇ ⛃ⱘ 㡆⡍ DŽ↨ ˈḍ 㛑 䗴 ⶹˈ⬉ ⱘ 䞡䞣Ӯ 䴲䳊 ˈ 㗠ℸ Ҏ乘⌟⿄䕑⌕ 䖕⿏⥛ Ӯ催DŽ Ϣ乘⌟Ⳍ ˈ ⷇ ⛃г㛑 䴲 催ⱘ䕑⌕ 䖕⿏⥛ˈԄ䅵ҎӀ ⷇ ⛃⫼䗨ⱘ Ӯ 催DŽℸ⃵ⷨおӮϞˈ䰸њ䇎≗㙪⋯ ⱘⓨ䆆П ˈ ⷇ ⛃ⱘ Ҫ 㿔г Ҏ⊼ⳂDŽ26㆛ⓨ䆆䆎 Ё 6㆛Ϣ⷇ ⛃ DŽ39㆛⍋ 䆎 Ё 10㆛ Ϣ⷇ ⛃ DŽ附四、碳电子学时代是否会因石墨烯而到来2010 Ѣ Ϫ 䇈 䆌ㅫⱘϞ ⬉ 乚 Џ㾦ⱘ Ң⸙˄Si˅ ⺇˄C˅䕀 ⱘϔ DŽ Ў 䖭ϔ ⦄њϡ 㛑 Ў ⱘ ⱘџӊǃ ⦄DŽϔ 2010 ⱘ䇎䋱 DŽ㦋 ⠽⧚ ⱘ䛑 Ϣ⺇Ⳍ ⱘⷨおDŽ⠽⧚ ⱘ㦋 ⧚⬅ ⫼“ ҷⱘ˄groundbreaking˅”˄⨲ ⱛ ⾥ 䰶˅ ⊩ˈҢ⷇ Ё ⾏ њ⺇䖲 6㾦 ˄6 ⦃˅㔥⢊ⱘ“⷇ ⛃”DŽ㗠 ⱘ㦋 ⧚⬅ 䗴 њՓ ⠽ⳌѦ㒧 ⱘ“ 㘨 ”DŽ ㅔ 䇈ˈ 䇎䋱 ⠽⧚ 催 䆘Ӌⱘˈϔ乍 ⺇䬂˄ҙЎ㣗 ˅ⱘ ˈ ϔ乍 Փ⺇㒧 ⱘ DŽϸ乍 ⱘ 䗮⚍ 䛑Փ⫼⺇䖭⾡䴲 ⱘ ˈ㗠Ϩ䛑㛑䗮䖛 Тϡ㗫䌍㛑⑤ⱘ 㡎 ⦄DŽ⨲ ⱛ ⾥ 䰶 䇧ⱘ“ ҷ ⊩” ⫼㛊 ㉬䌈 ⷇ Ϟ ⾏ⱘ ⊩ˈ 䰙Ϟ Ӏ г Փ⫼ ТⳌ ⱘ ҷ ⊩ ԰Ϣ⷇ ⛃㉏Ԑⱘ⠽䋼DŽ䪙ヨ 㞾 䪙ヨ㢃 ⬅⷇ ㉝ ⏋ ㉬ ⱘ 㒘 ⱘDŽ⫼䪙ヨ 㒌Ϟ ϡ 䗴㭘㭘ⱘ⷇ DŽԄ䅵 䯈гӮ ⷇ ⛃DŽ ℸ䌈䖥 ⫳⌏ⱘ 㸠Ў㤷㦋䇎䋱 ⠽⧚ ⱘ 䖬≵ ՟DŽⱘ 㘨 г ⚻ 䆩ㅵ ⱘ ˈ ℸ㛑 ҹ䴲 Ԣⱘ 䴲 ⱘ㛑⑤䖯㸠DŽϡⶹ⨲ ⱛ ⾥ 䰶 ℸ ˈℸ⃵ⱘ䇎䋱 Փ⫼ 䗳 㛑⑤ⱘ“ ⾥ ”ⱘ ⚜䆑 DŽ䕑≑䔺гϡӮ⸈ⱘϡ䇜䇎䋱 ˈ2010 г ⷇ ⛃ ⠽ ⫼ⷨお 䗳 ⱘϔ DŽ㛑 ⫼⷇ 㛊 ԰ⱘ⷇ ⛃ ҙЎ Njm̚ mm㾕 ˈ㗠䶽 佚 ˄Sungkyunkwan University˅Ϣϝ ⬉ ㄝ ԰ њⳌ Ѣ⬉㾚 30㣅 ˄ 㾦㒓30㣅 =㑺76cm˅ⱘ ⷇ ⛃ DŽ 䖬 ԰ њՓ⫼䆹⷇ ⛃ ⱘ㾺 䴶 DŽ⷇ ⛃ 䪏⷇ϔḋˈ Ϫ⬠Ϟ ǃ ⹀ⱘ ПϔDŽ⨲ ⱛ ⾥ 䰶 㸼2010 ⱘ⠽⧚ 䖭ḋ↨ ˖“ ⫼⷇ ⛃ ԰ ˈ ㅫ ϔ г ҹ ”DŽг Ԅㅫ ⼎ˈ 䆒䞡 ⷇ ⛃ ˈՓ Ϣ亳 剰㝰 Ў Njmⱘ䆱ˈ䙷М 䕑≑䔺гϡӮ⸈㺖DŽ ⫼ ˈ 㛑 ԰Ў ぎ 䰡㠅ⱘ Փ⫼DŽ ✊㛑 ԰ 30㣅 ⱘ⷇ ⛃ ˈ䙷М㟇 ϡ䖰ⱘ Ӯ ⦄ DŽՓ⫼⷇ ⛃ⱘ⬉ ӊⱘ г 䖯 DŽ䆺 䇋 䯙lj 㒣⬉ NJ2010 12 27 㾷䇈 䘧“䖯 ⫼ ゲѝⱘ⷇ ⛃ˈ‘⼲П ’ ⫼ ՟䕜 ”ϔ ˈ 乘 Ѣ2011 1 28 ⱘⷨ䅼Ӯ“⷇ ⛃ ⫼ⱘ 㛑 ˈ̚Ң㾺 䴶 ˈ䗣 ⬉㝰ˈ催䗳 ӊ 䞣ѻ ̚”DŽВ՟ 䇈ˈ㕢 IBMㄝ ԰ њҹ200GHz̚300GHz䍙催䗳 ԰ⱘ⷇ ⛃ ԧㅵDŽ ԰乥⥛ ҹ↣ 㑺2 ⱘ䗳 DŽ䖬 ⿄ˈ ⷇ ⛃ˈϸ 䯈 䱭ˈՓ⬉⌕ⱘ ↨䖒 104∈ DŽ䰸ℸП ˈ ⫼⷇ ⛃ⱘ䍙催 ⇨ԧӴ ˈҹ 䖥ⱘ䗮 ⫼MEMS ㄝг 䆩 ПЁDŽ䖭 Ўˈ ⷇ ⛃ ⫼ѢMEMS ˈ MEMSⱘϹ䞡䇒乬 ҹ㾷 DŽ䖭Ͼ䇒乬 ӊ 䍞 ˈ ⫳ 䞣䍞 ˈ 㟈 ԰ϡ Ҏ DŽ ⱘ 催䗳 ԰㛑 乒ˈ ѢMEMSг Ӯ ⱘさ⸈DŽ ҹ䇈ˈ “ Si”ǃ“ CMOS”ǃ“More than Moore”ㄝ ϔҷ⬉ ӊⱘ╂⌕Ёˈ⷇ ⛃ℷ Ўϡ 㾚ⱘ DŽ⺇㒇㉇ㅵг䞡⷇ ⛃ⱘ“҆ ”⺇㒇㉇ㅵ˄CNT˅ 䖥г䖢 њ さ⸈DŽ ⦄Ѣ⷇ ⛃“ ⦄”ⱘ13 ˈ 1991 ⱘCNT Ϣ⷇ ⛃ϔḋˈ ӫ Ӭ㡃 䋼ˈ ⫼ DŽԚ 䩜ϔḋⱘ ⢊ 䗴 䲒ҹ 䭓 ǃ㉫㒚ǃ ҹ ԡ㕂ˈ㗠Ϩ䞥 Ϣ ԧ ⏋ ˈ䖭ϔ䇒乬䭓 㛑 㾷 DŽ⫮㟇 ⳟ⊩ ˈCNT 㚎Ё Ϣ⷇ẝϔḋⱘ㟈Ⱐ ˈ ѯ ⷨお г ⷨお䞡⚍ҢCNT䕀⿏ њ⷇ ⛃DŽ䖭⾡ ϟ ⦄ⱘさ⸈ ҹ䕗催ⱘ㊒ ˈ䴲 ㅔ ⾏䞥 CNTϢ ԧ CNTⱘ ⦄DŽ ѻϮ 㓐 ⷨお NEC 䞣ѻ 㒃 䴶 䇒乬ⱘ⾏ ⾏⊩ⱘ ϟˈ њ⬉⋇⊩ Փ⫼⨐㛖ⱘЏ㽕 ——⨐㛖㊪ⱘ ⊩DŽ ˈNEC䖬ҹ ⾏ⱘ ԧ CNTЎ ⸔ˈ䗮䖛䖤⫼ ˈ ԰ њ ԰乥⥛Ў100kHzⱘ 䈵Ӵ ⫼FET䰉 DŽNEC 2009 Ϟ 㒣Փ⫼䞥 Ϣ ԧ ⏋ ⱘCNT⒊⎆ ԰њFETˈ䖭⃵ˈ Փ⫼ ⾏ⱘ ԧ CNTㄝ 䖯ˈFETⱘ ԰乥⥛ 催њϸԡ DŽℸ ˈ ⬉ ӊˈ ⍖ 㡎Ёˈ ԧϔⳈ Ҏ⊼Ⳃˈ㗠CNT԰Ў ԧ 㒓 㒣 ⦄њϔВ 䍋ⱘ 㛑 DŽԚ 䆹乚 ˈ⷇ ⛃ձ✊ ゲѝ DŽг ѯ⫼䗨 ⷇ ⛃ ⊩ 䲒ҹ ˈԚCNT㛑 ⦄DŽ՟ ϝ㓈 ԧㅵⱘ Ⳉ⬉ ℸDŽ ⷇ ⛃ ⫼Ѣ ԧㅵ䗮䘧 㒓ⱘ ⊩ ˈ԰Ў 㸹 ˈCNTг 䌶 ⊼DŽˈCNTⷨおҎ 㸼⼎ˈ䚼 乴㽚CNT 䇈⊩ⱘ г 㒣 DŽⷨお㸼 ˈ ⱘ ⾡CNT Ϣ ⱘ⏋ ⠽䖯 ԧ ⱘ ˈ ⾏ 䳔⡍ ㊒ 㗠 ⱘCNT≵ 㟈Ⱐ DŽ⠽ ⬉ ӊЁⱘ ⫼ ✊ϡ㚰 ВDŽ㋶ 㸼ⱘ ҹ㓴㒩ⱘ EL ⼎ ˈ ⫼⍖ 㡎 ԰ⱘ EL✻ ˈ䕀 ⥛䖒 8ˁ∈ ⱘ 㭘㝰 䰇㛑⬉∴г ϡЙⱘ ⫼ DŽSi Cⱘ㵡 г њ2010 ˈ ⴔ⺇ ⬉ 乚 䞡㽕ⱘџӊ䖬 ϔӊDŽ䙷 ⺇ ⸙˄SiC˅DŽ㔫 Ѣ2010 12 21 ⧗佪 䞣ѻSiC ԧㅵ˄DMOSFET˅DŽ ѢSiCѠ ㅵˈ2010 8 ϝ㧅⬉ 㒣 ぎ䇗ѻ Ё䞛⫼DŽˈ 䖥 ⱘ催 㛑⷇ ⛃ ԧㅵЁˈ⷇ ⛃ ⫼SiC 䗴DŽ䖭⾡⷇ ⛃ 䗴⊩㹿⿄Ў“SiC⛁ 㾷⊩”ˈ ⫼њҹSiC Ў ˈ 㸼䴶催⏽ ⛁ ˈSi ⣀㜅⾏ˈ ԭⱘC㞾 ⷇ ⛃㒧 ⱘ 䋼DŽҎӀ䖬 ⫼ Ⳍ ℹ偸ˈ њ ⷇ 㸼䴶 Siˈ ԰SiC㭘㝰ⱘ ⊩DŽ䆹 ⊩ⱘ ⧚ SiϢCⱘ 䋼䴲 䖥DŽѠ㗙ⱘ ⬉ 䛑Ў4Ͼˈ ⱘ 䪏⷇㒧 ⱘ ԧDŽг 䇈ˈ⸙ Si⠜⚗——㘮⸙⛋ Si⠜ ⠽ПϔDŽҢSi Cˈ ҢC Siˈ䗮䖛 ⱘ㕂 ˈ ⬉ г DŽSiϢCⱘ Ѣ…䖭䞠䳔㽕 䆝 ˈ⬅ℸ 䛑 ヨ㗙ⱘ⣰ DŽ ҹSi⬉ Ў 㗗⺇⬉ 㛑 ˈ䞡㽕ⱘ ˖ 䋼 ℸ 䖥ˈ 䛑 ⧗Ϟ 䞣 ⱘ ㋴ˈЎҔМSi≵ ҷC ⫳ ԧ˄⸙ ⫳⠽˅˄䰸SiO2 ˅DŽ⸙Ϣԧ㒘㒛Ⳍ 㡃 ˈ⸙ ⫳⠽ ϡ DŽѢ䖭ϔ⭥䯂ⱘ㾷䞞Ёˈ㒣 ⱘ “䖭 ЎSiⱘ 䬂˄sp2⏋ 䔼䘧⢊ ˅ϡ〇 ”DŽ 䬂ⱘSi ⠽㱑✊ ⸙⛃ㄝˈԚ Ѣ∈ ⇻ϡ〇 DŽ ḋˈSi⠜⷇ ⛃ˈ ⷇ 㒧 ⱘSi ԧг≵ 〇 ⱘ㉏ DŽ 䬂ϡ〇 ˈ㲟ⱑ䋼ㄝ ⱘ ḋ 䲒ҹѻ⫳DŽԚ 䆚 Ӯ㹿乴㽚ⱘDŽ ϡЙ ˈ㕢 NASAⱘⷨおҎ ⦄њ ⫳ ԧ㒘㒛 DNAЁ ⫼⸋˄As˅ ҷ⻋˄P˅ⱘ㒚㦠ˈ乴㽚њҹ ⱘ 䆚DŽ㗠Ϩˈ 2004 ⷇ ⛃ ⾏П ˈⷨおҎ П䯈г ⴔ⷇ ⛃ ⣀ ⊩〇 ⱘ 䆚DŽ ℸˈ ѢSiгϡ㛑 㿔 䆚ϡ 㛑㹿乴㽚DŽ 䰙Ϟˈ ⷨお䅸Ўˈ 䖥 ⱘϔ⾡ њ∂˄N˅ㄝ⏏ ⠽ⱘSiԢ㘮ԧ Ϣ⷇ ⛃Ⳍ ⱘsp2⏋ 䔼䘧ˈ㗠Ϩ䴲 〇 DŽ 䬂㛑 ԰Ў⸙ ⫳⠽ϡ ⱘ 䬂⧚⬅ձ✊ ⭥䯂DŽϾҎ㗠㿔ˈヨ㗙䅸Ў⸙ ⫳⠽ϡ ⱘ 㛑 Ў˖“SiO2䖛Ѣ〇 ˄ 䱭 䗣 ⢊˅”DŽCO2㛑 䗮䖛 䖬 ⚗ˈԚSi⠜ⱘ Ў 䰇 ˄ 㾚 ˅㛑䞣ϡ䎇㗠 ⊩ ⦄DŽ ℸˈ ⫼SiO2ⱘỡ⠽≵ ⦄ˈ㒧 г ϡӮ⫳ 㘮⸙⛋ㄝ⠽䋼DŽ 䇈ˈ 䆒⸙ ⫳⠽ ˈ⬅Ѣ⇻ 䴶䖯㸠ˈϡѻ⫳䖬 ˈ“㊂亳” Ӯ㗫 䍄 ♁ѵDŽ 㢹 ℸˈ 㸠 ⦃㒩 ㋿ 㒓䴲 ⚜ⱘ ˈ䙷䞠䇈ϡ 㛑 ⸙ ⫳⠽⫳ ……附五、如何发挥石墨烯的潜力？东京大学解析载流子迁移率的劣化原理ⱘϝ⾡ 㸼䴶䕑⌕ 䖕⿏⥛䕑⌕ 䖕⿏⥛ ⱘ ⧚ϰҀ ⷨお⫳䰶 ㋏ⷨお⾥ ϧϮ 右⍋ Ϣ䆹ϧϮ䆆 䭓∤ 䕙ㄝҎⱘⷨお 㒘ˈ њSiO2/⸙ ⷇ ⛃⬠䴶ϞⱘⳌѦ԰⫼ ⷇ ⛃䕑⌕ 䖕⿏⥛ㄝ⡍ 䗴 ⱘ ˄ⓨ䆆 ˖23.4˅DŽ ⹂њ Ϣ⷇ ⛃Ⳍ䖲 ⱘSiO2 Ͼ㸼䴶ҹOH 㒜 㡎 ⧚ˈ䆹OH ԰Ў⬉㥋 䋼 ԰⫼ˈ Ӯ䰡Ԣ⷇ ⛃ⱘ䕑⌕ 䖕⿏⥛ㄝDŽ䆹 ⷇ ⛃FETЁ䗮䖛 䗴 㡎Ϟⱘ 䖯 催䕑⌕ 䖕⿏⥛ НDŽ⷇ ⛃ ⦄20ϛcm2/Vs䕑⌕ 䖕⿏⥛ⱘ┰ DŽϡ䖛ˈ FETⱘ 䗴——SiO2/⸙ Ϟˈ ⊩ ⦄ ℸ催ⱘ䕑⌕ 䖕⿏⥛ˈ ⱘḜ՟Ёˈ䕑⌕ 䖕⿏⥛ҙЎ1ϛcm2/Vs DŽ ℸˈ䗮䖛 Ϟ䞛⫼ ㄝˈҹ 催䕑⌕ 䖕⿏⥛┰ ⱘ 䆩 DŽ䭓∤㸼⼎ˈϰҀ ⱘⷨお 㒘ℸ⃵“Ң‘ 䆹䕏 Փ⫼ ԧϮ⬠⿃㌃њ 㒣偠ⱘSiO2/⸙ ˛’䖭Ͼ䯂乬 њⷨおDŽℸ ≵ 㾕 䖛 SiO2/⸙ ⱘ㸼䴶⢊ Ϣ䕑⌕ 䖕⿏⥛ⱘ ԩ ㋏ⱘ偠䆕Ḝ՟”DŽ䆹ⷨお 㒘 ⸙ Ϟ䗮䖛⛁⇻ њ100nm ⱘSiO2 ˈ њ˄1˅ ⫼HF˄⇶⇳䝌˅ SiO2 㟇90nmⱘ ˈП ˄2˅䖯㸠њO2ㄝ⾏ ⧚ⱘ ˈҹ ˄3˅䗮䖛催⏽⛁ ⧚㜅 њ∈ ⱘ DŽ佪 ˈ 㒃∈ 䖭ѯ Ϟˈ⌟䞣Ϣ П䯈ⱘ 㾺㾦ˈ⬅ℸ ⱘ҆∈ ⭣∈ DŽ ⼎ 催҆∈ ⱘ Ͼ㸼䴶ҹOH ԰ 㒜 ⧚ⱘ˄2˅ DŽ҆∈ ⃵催ⱘ 䚼 㸼䴶⬅C x H y 㽚Ⲫⱘ˄1˅ ˈ˄3˅ⱘ ⼎ њ⭣∈ DŽ✊ ˈ Ϟ䗮䖛䕀 㡎 ⷇ ⛃ˈ ⌟䞣 䕑⌕ 䖕⿏⥛ㄝˈ䇗 ϢSiO2 㸼䴶҆∈ ⭣∈ П䯈ⱘ ㋏DŽ㒧 ⦄ˈ˄1˅ ˄3˅ⱘ Ϟ㦋 њ1ϛcm2/Vs ⱘ䕑⌕ 䖕⿏⥛ˈ㗠˄2˅ⱘ Ϟⱘ䕑⌕ 䖕⿏⥛ 䰡㟇2000cm2/Vs DŽ˄2˅ⱘ ϞˈOH ⷇ ⛃ҹ䕗ⷁⱘ䎱⾏Ⳍ ˈ ℸOH Ӯ ⷇ ⛃Ϟ䇅 ℷ⬉㥋ˈҢ㗠 㟈䕑⌕ 䖕⿏⥛ DŽ˄1˅ⱘ ⬅ѢC x H y ⱘ ˈOH ⷇ ⛃ⱘ䎱⾏ Ѣ˄2˅ⱘ DŽ㒧 ˈOH 䲒ҹ ⷇ ⛃ˈҢ㗠 ҹ 䕑⌕ 䖕⿏⥛ⱘ DŽⷨお 㒘ḍ Ϟ䗄 䅸Ўˈ ⷇ ⛃FETⱘ 䗴 㡎Ёˈ䞛 Փ⷇ ⛃ SiO2 㸼䴶ϡ䖛 ㋻䌈ⱘ㸼䴶 ⧚ˈ 㦋 催䕑⌕ 䖕⿏⥛ 䞡㽕ⱘDŽ附六、在石墨烯开发上也领先一步的三星IEDM 2010 ӮЏ乬ⓨ䆆Ӯ ⱘ2010 12 ӑˈヨ㗙䞛䆓њ 㕢 䞥 В ⱘ ԧ ӊⳌ 䰙Ӯ䆂“IEDM 2010”DŽ䞛䆓Џ乬Пϔⱘ ⷇ ⛃DŽ䖭 Ўˈ ⷇ ⛃ⷨお㦋 2010 䇎䋱 ⠽⧚ ⱘ ˈ 䚼 њϔϾ ⷇ ⛃к㈡ ⷨ䅼Ӯⱘ乍ⳂDŽ 䖥3̚4 ˈIEDMӮ䆂Ϟ ⷇ ⛃ⱘ䆎 䗤⏤ ˈℸ⃵ 12ӊ䆎 ˈ⫮㟇䖬 䆒њ⣀ゟⱘ 㒘ӮDŽIEDM 2010Ӯ䆂Ϟ⷇ ⛃Ⳍ 䆎 Ё㒭ヨ㗙⬭ϟ 䈵 ⏅ⱘˈ 䶽 ϝ ⬉ ˄Samsung Electronics˅ ϟ ⸔ⷨおӏ ⱘϝ ッ ⷨお ˄Samsung Advanced Institute of TechnologyˈSAIT˅ 䭓ⱘKinam Kim 㸼ⱘЏ乬ⓨ䆆DŽ乬Ў“From the Future Si Technology Perspective˖Challenges and Opportunities”ⱘ䆹ⓨ䆆ⱘЏ ˈ NAND䮾 DRAM ⱘSi-CMOS 㛑 ϔⳈՓ⫼ 10nmҹϟ 㡎DŽ ҹ䇈䖭 ϝ ℆Ҟ 乚 ԧ ⱘ ⹂㸼䖒њ ˈԚヨ㗙 䍷ⱘˈ Kim ⓨ䆆ⱘ 䚼 ҟ㒡ⱘϢ⷇ ⛃Ⳍ ⱘⷨお DŽKimҟ㒡ˈSAIT Ⳉ Ў150mmⱘ⸙˄Si˅ Ϟ ԰њ 䭓 Ў180nmⱘ⷇ ⛃ ԧㅵˈ 偠䆕њ 䍙䖛200GHzⱘ ℶ乥⥛ϟ ԰DŽ “↨⸙ ӊ ⱘ ӊϞˈ њ↨⸙ 㚰ϔㅍⱘ 㛑”˄Kim˅䖭ϔ⚍Ϟˈ ҹ䇈䖭 ϔ乍 ⼎ ⷇ ⛃ⱘ ┰㛑ⱘ DŽ Ѣ䖭⾡䞛⫼⷇ ⛃ⱘ⬉ ӊˈKim 䇈ˈ“԰Ў催䗳催乥 ⧚ ӊ ┰㛑ˈ Ϩ Ϣ⦄ ⱘSi-CMOS⬉䏃㵡 ˈ䖭ϔ⚍ DŽ ˈ⷇ ⛃ ӊ 㛑ӮϢ㞾 ⬉ ӊϔ䍋䲚 Ϣ⸙ ӊⳌ ⱘ Ϟ”DŽ ⷇ ⛃ⱘ 㝰 䴶ˈϝ ⱘ⷇ ⛃ ԧㅵ䞛⫼њϢ ԧ 䗴 䕗催ⱘԢ⏽CVD⊩ˈ ℆ϢSi-CMOS㵡 ⱘ ⚜ 䆚㸼䴆 䘫DŽ䰸њ ⬉ ӊϞⱘ ⫼П ˈϝ 䖬㟈 Ѣ ⷇ ⛃⫼Ѣ ⼎ 䰇㛑⬉∴⫼䗣 ⬉ DŽ2010 6 ˈ䶽 佚 ˄Sungkyunkwan University˅Ϣ 佁 ╘⬋ ԰ˈ⫼⷇ ⛃ ԰ њ30㣅 ⱘ 䗣 ⬉ 㭘㝰DŽ԰Ўϔ乍 䗣 ⬉ ⫼ 䴶⿃⷇ ⛃㭘⠛䞣ѻ ⱘ ˈ њ䴲 催ⱘ ⊼DŽϔⳈҹ ˈϝ 㹿䅸Ў 䖯⍋ ⱘ ˈ䗮䖛 Ԣ 䞣ѻ Ϟ㊒Ⲟ∖㊒ˈҢ㗠⹂ゟњ ӊ ԡⱘ DŽⳂ Ў ӊϮ⬠☿䔺 ⱘ䆹 ˈ㞾Џ ⱘ ⱘ 㽕 䖿 ⳝⴿDŽℸ⃵ Џ乬ⓨ䆆Ёⱏ 㿔ⱘKimˈ ϝ 䭓 Џ DRAM NAND䮾 ⱘҎ⠽DŽ 䋳䋷 ⷁ 㛑 Ϯ ⱘ ⱘҎ DŽ 䖭ḋⱘҎ 㕂Ѣ ⷇ ⛃ㄝ ⸔ⷨおⱘ㒘㒛ⱘ催ㅵԡ Ϟˈヨ㗙㾝 Ң䖭ϔ⚍ ⳟ ϝ ⱘ DŽⴔ ⷇ ⛃⠽ ⧚䆎ⱘ⹂ゟㄝ ⸔ⷨお԰ 䋵⤂ⱘ DŽ 㺙㕂 ㄝ ⸔ 䴶г↿ϡ䗞㡆DŽ⷇ ⛃ ϔ⾡㭈 ⴔ ⿄“䪏⷇ ⷇”㠀┰㛑ⱘ ˈ㟇 ϝ ⹂ 䆚 њ䖭ϔ⚍DŽ ⱘѻϮ⬠ 䆹ϡӮ 㕵 㾚ϝ ㄝ ⱘВ DŽ ѢҞ ⷇ ⛃ ⛁╂ⱘ催⍼ˈヨ㗙 ⒵ DŽ。