T =25℃ a
10
100
COLLECTOR CURREMT I (mA) C
I ——
C
V BE
β=10
1000 1500
100
=25℃
=100℃
T a
T a
10
1 0
1000
COMMON EMITTER V = 1V
CE
300
600
900
1200
BESE-EMMITER VOLTAGE V (mV) BE

Symbol
A b b1 c D D1 E E1 e e1 L
Dimensions In Millimeters
Min.
Max.
1.400
1.600
0.320
0.520
0.400
0.580
0.350
0.440
4.400
4.600
1.550 REF.
2.300
2.600
3.940
Seal the box with the tape
QA Label
Label on the Inner Box Inner Box: 210 mm× 208 mm×２０３ mm
Label on the Outer Box Outer Box: 440 mm× 440 mm× 230 mm
Collector-base breakdown voltage
V(BR)CBO IC=100uA, IE=0
Collector-emitter breakdown voltage
V(BR)CEO IC=0.1mA, IB=0
Emitter-base breakdown voltage
V(BR)EBO IE=100μA, IC=0
VCBO
Collector-Base Voltage
40
V
VCEO
Collector-Emitter Voltage
25
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current -Continuous
1.5
A
PC
Collector Power dissipation
Base-emitter positive favor voltage
VBEF IB=1A
Transition frequency
fT
VCE=10V,IC=50mA,f=30MHz
output capacitance
CLASSIFICATION OF hFE(1)
Rank
B
Cob
VCB=10V,IE=0,f=1MHz
0
1
REVERSE VOLTAGE V (V)
P —— T
C
a
10
20
25
50
75
100
125
150
AMBIENT TEMPERATURE T (℃) a
B,Nov,2012
COLLECTOR CURRENT I (mA) C
TRANSITION FREQUENCY f (MHz) T
【 南京南山半导体有限公司 — 长电三极管选型资料】

PXT8050
COLLECTOR CURRENT I (A) C
(mV)
CEsat
VOLTAGE V
COLLECTOR-EMITTER SATURATION
0.30 0.25 0.20 0.15 0.10 0.05 0.00
0
1000
Static Characteristic
Collector cut-off current
ICBO
VCB=40V, IE=0
Emitter cut-off current
ICEO
VCE=20V, IE=0
Emitter cut-off current
IEBO
VEB=5V, IC=0
DC current gain
hFE(1) hFE(2)
VCE=1V, IC=100mA VCE=1V, IC=800mA
VOLTAGE V
(mV)
DC CURRENT GAIN h FE
BEsat
1000 300 100
h —— I
FE
C
T =100℃ a
T =25℃ a
10 1
1200 1000
800 600
400 1
100
10
COMMON EMITTER V = 1V
CE
10
100
COLLECTOR CURRENT I (mA) C
1000 1500
V —— BEsat
I
C
T =25℃ a T =100 ℃ a
10
100
COLLECTOR CURREMT I (mA) C
C /C —— ob ib
V /V CB EB
C ib
β=10
1000 1500
f=1MHz
I =0/I =0
E
C
T =25 ℃ a
C ob
1 0.1
0.6 0.5 0.4 0.3 0.2 0.1 0.0
1mA 0.9mA 0.8mA
COMMON
EMITTER T =25℃
a
0.7mA
0.6mA 0.5mA
0.4mA
0.3mA 0.2mA
I =0.1mA
B
1
2
3
4
5
6
7
COLLECTOR-EMITTER VOLTAGE V (V) CE
V
——
CEsat
I
C
100
10
1 1
1500 1000
T =100 ℃ a
0.118 TYP.
0.035
0.047
The bottom gasket The file folder
Plastic bag
Label on the Reel 1000×1 PCS
The top gasket
Seal the box with the tape
Stamp “EMPTY” on the empty box
Collector-emitter saturation voltage
VCE(sat) IC=800mA, IB=80mA
Base-emitter saturation voltage
VBE(sat) IC=800mA, IB=80mA
Base-emitter voltage
VBE
VCE=1V, IC=10mA
4.250
1.500 TYP.
3.000 TYP.
0.900
1.200
Dimensions In Inches
Min.
Max.
0.055
ห้องสมุดไป่ตู้
0.063
0.013
0.020
0.016
0.023
0.014
0.017
0.173
0.181
0.061 REF.
0.091
0.102
0.155
0.167
0.060 TYP.
SOT-89-3L
FEATURES z Compliment to PXT8550
MARKING: Y1 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
1. BASE 2. COLLECTOR 3. EMITTER
Symbol
Parameter
Value Unit
【 南京南山半导体有限公司 — 长电贴片三极管选型资料】

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89-3L Plastic-Encapsulate Transistors
PXT8050 TRANSISTOR (NPN)
0.5
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~150 ℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol Test conditions
f T
——
I
C
100
10
COMMON EMITTER
V =10V CE
T =25℃ a
1
2
10
100
COLLECTOR CURRENT I (mA) C
COLLECTOR POWER DISSIPATION P (W)
C
BASE-EMITTER SATURATION
CAPACITANCE C (pF)
C
D
Min Typ Max Unit
40
V
25
V
5
V
0.1
μA
0.1
μA
0.1
μA
85
400
40
0.5
V
1.2
V
1
V
1.55
V
100
MHz
15
pF
D3
Range
85-160
120-200
160-300
300-400
B,Nov,2012
【 南京南山半导体有限公司 — 长电贴片三极管选型资料】