ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) fT Cob Test conditions IC=50uA, IE=0 IC=1mA, IB=0 IE=50uA, IC=0 VCB=60V, IE=0 VEB=7V, IC=0 VCE=6V, IC=1mA IC=50mA, IB=5mA VCE=12V, IC=2mA, f=100MHz VCB=12V, IE=0, f=1MHz 180 3.5 120 Min 60 50 7 0.1 0.1 560 0.4 V MHz pF Typ Max Unit V V V μA μA
IC
COMMON EMITTER IC/IB=10
30
——
VBE
VCE=6V
COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV)
300
(mA)
10
COLLCETOR CURRENTIC1 Nhomakorabea03
Ta=100 ℃ Ta=25 ℃
Ta=100 ℃
1
30
Ta=25 ℃

Symbol A A1 A2 b1 b2 c D E E1 e e1 L L1 θ
Dimensions In Millimeters Min. Max. 0.700 0.900 0.000 0.100 0.700 0.800 0.150 0.250 0.250 0.350 0.100 0.200 1.500 1.700 0.700 0.900 1.450 1.750 0.500 TYP. 0.900 1.100 0.400 REF. 0.260 0.460 0° 8°
200
2SC4617
hFE
1000
——
VCE
COMMON EMITTER Ta=25 ℃
——
IC
COMMON EMITTER VCE=6V
1/0.9/0.8mA
160
Ta=100 ℃ 0.7mA 0.6mA 0.5mA
300
(mA)
IC
COLLECTOR CURRENT
0.4mA
DC CURRENT GAIN
QA Label
Label on the Inner Box Inner Box: 210 mm× 208 mm× 203 mm
Label on the Outer Box Outer Box: 440 mm× 440 mm× 230 mm
o
——
Ta
30
150
C
(pF)
Cib
10
CAPACITANCE
100
Cob
3
50
1 0.1
0 0.3 1 3 10 30 100 0 25 50 75 100 125 150
REVERSE VOLTAGE
V
(V)
AMBIENT TEMPERATURE
Ta
(℃ )
A,May,2011
【 南京南山半导体有限公司 — 长电贴片三极管选型资料】
SOT-523
1. BASE
FEATURES Low Cob:Cob=2.0pF(Typ) Complement to 2SA1774
2. EMITTER 3. COLLECTOR
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol VCBO VCEO VEBO IC PC TJ Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Parameter Value 60 50 7 150 150 150 -55-150 Unit V V V mA mW ℃ ℃
【 南京南山半导体有限公司 — 长电贴片三极管选型资料】

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-523
2SC4617
TRANSISTOR (NPN)
Plastic-Encapsulate Transistors
CLASSIFICATION OF hFE
Rank Range Marking
Q
120-270 BQ
R
180-390 BR
S
270-560 BS
A,May,2011
【 南京南山半导体有限公司 — 长电贴片三极管选型资料】

Typical Characteristics
IC

The bottom gasket
Label on the Reel 3000×15 PCS 3000×1 PCS
The top gasket Stamp “EMPTY” on the empty box Seal the box with the tape
Seal the box with the tape
0.3
10 0.1
0.3
1
3
10
30
100
200
0.1 0.0
0.2
0.4
0.6
0.8
1.0
COLLECTOR CURRENT
Ic
(mA)
BASE-EMMITER VOLTAGE
VBE
(V)
Cob/Cib
100
——
VCB/VEB
200
Pc
f=1MHz IE=0 / IC=0 Ta=25 C COLLECTOR POWER DISSIPATION Pc (mW)
【 南京南山半导体有限公司 — 长电贴片三极管选型资料】

【 南京南山半导体有限公司 — 长电贴片三极管选型资料】

【 南京南山半导体有限公司 — 长电贴片三极管选型资料】

【 南京南山半导体有限公司 — 长电贴片三极管选型资料】
120
hFE
Ta=25 ℃
100
0.3mA
80
0.2mA
40
30
IB=0.1mA
0 0 4 8 12 16 20 24
10 0.1
0.3
1
3
10
30
100
200
COLLECTOR-EMITTER VOLTAGE
VCE
(V)
COLLECTOR CURREMT
IC
(mA)
VCEsat ——
1000
Ic
100
Dimensions In Inches Min. Max. 0.028 0.035 0.000 0.004 0.028 0.031 0.006 0.010 0.010 0.014 0.004 0.008 0.059 0.067 0.028 0.035 0.057 0.069 0.020 TYP. 0.035 0.043 0.016 REF. 0.010 0.018 0° 8°