High Power Infrared Laser Diode
* For reference only. Contents above are subject to change without notice.
★830nm 1W C-Mount PKG
Features
1. Laser wavelength 830nm
2. High brightness
3. High efficiency
Applications 1. Instrumentation 2. 3D-sensing
3. Computer to plate
4. Medical/Life and health sciences
5. Illumination
Absolute maximum ratings
Electrical and optical characteristics (T c =25 o C) Parameter
Symbol Min. Typ. Max. Unit Conditions
Peak wavelength λ
830 833 - nm P o =1W, CW
Emitter size - 50 - um
Polarization
TM Threshold current I th - 0.18 0.25 A Operating current I op - 1.05 1.3 A P o =1W Operating voltage V op 2.0 2.2 V P o =1W Differential efficiency
η 0.95 1.15 - W/A P o =0.2-1W Parallel divergence angle
θ// 3 7 12 deg P o =1W, FWHM Perpendicular divergence angle
θ⊥
32
38
43
deg
P o =1W, FWHM
Precautions
* Do not operate the device above maximum ratings. Doing so may cause unexpected and permanent damage to the device.
* Take precautions to avoid electrostatic discharge and/or momentary power spikes. A change in the characteristics of the laser or premature failure may result.
* Proper heat sinking of the device assures stability and lifetime. Always ensure that maximum operating temperatures are not exceeded.
* Observing visible or invisible laser beams with the human eye directly, or indirectly, can cause permanent damage. Use a camera to observe the laser.
* No laser device should be used in any application or situation where life or property is at risk in event of device failure.
* Specifications are subject to change without notice. Ensure that you have the latest specification by contacting us prior to purchase or use of the product.
Parameter Symbol Condition Rating Unit
Light output power P O CW 1.1 W Reverse voltage (LD) V RL - 2 V Case temperature T C - -10~+30 o C Storage temperature T S - -40~+85
o C
Cathode Tab (-)
(Copper Lead)
※ Dimensions are in mm.。