Key words: Bandgap Reference; Layout; Power Supply Rejection Ratio; Temperature Coefficient
III
目
第1章 1.1
录
绪论············································································ 1 带隙基准源概述······························································1 1.1.1 1.1.2 带隙基准源的研究现状········································· 1 研究目的及意义···········································设计········································· 17 3.2.1 3.2.2 3.2.3 3.2.4 3.2.5 设计指标·························································· 17 带隙基准源架构·················································17 核心电路设计···················································· 20 运放设计·························································· 22 偏置电路设计···················································· 23
4.3
本章小结····································································· 33
结论························································································ 34 致谢························································································ 35 参考文献·················································································· 36
10/100M 以太网收发器带隙基准源设计
摘要： 带隙基准源是当代模拟集成电路极为重要的组成部分， 广泛应用于收发器、 数模转换器、模数转换器、数模混合集成电路、线性稳压器、高精度比较器、随机存 取存储器、 闪存等， 是其中不可或缺的重要单元， 其性能直接影响到整个系统的性能。 本文首先介绍了 CMOS 带隙基准源的研究现状和选题背景及意义。分别采用集 成芯片 MC1403 和 TL431 设计了基于基本电子电路的带隙基准，在模拟仿真软件 Multisim 13.0 下仿真原理图，输出电压达到 1.25V±1%。设计了基于标准 CMOS 工艺 的带隙基准电压源，包括核心电路、运算放大器和偏置电路的设计。在 5V 电源电压 下，基于中芯国际 0.35μm CMOS 2P3M 工艺，利用 Spectre 仿真器对带隙基准电压源 电路进行模拟仿真，最终得到电源电压抑制比（PSRR）大于 70dB，温度系数（TC） 小于 10ppm/°C，基准输出电压 1.25V±0.3%。最后利用 Cadence Virtuoso 设计工具， 对电路进行版图设计，并通过验证。
本章小结····································································· 27 带隙基准版图设计·························································· 28 版图设计考虑因素························································· 28 4.1.1 4.1.2 4.1.3 匹配性考虑······················································· 28 抗干扰性考虑···················································· 29 失效机制的考虑·················································29
2.3 2.4 2.5
带隙基准的产生······························································8 带隙基准的性能指标························································8 几种传统带隙基准结构··················································· 10 2.5.1 2.5.2 2.5.3 Widlar 带隙基准源·············································· 10 Brokaw 带隙基准源·············································11 CMOS 带隙基准·················································12
关键词：带隙基准； 版图； 温度系数； 电源电压抑制比
II
Design of 10/100M Ethernet transceiver bandgap reference source
Abstract: Bandgap reference source are an essential part of modern analog integrated circuit, and widely used in the transceiver, DAC, ADC, SOC, LDO, precision comparator, RAM， FLASH. It is one of indispensable important unit.Its performance directly affects the performance of the whole system. In this paper, first introduces the research actuality of CMOS bandgap reference source and the selected topic background and significance. Respectively using integrated chip MC1403 and TL431 basic electronic circuit design based on the bandgap of the benchmark, under the simulation software Multisim 13.0 simulation schematic diagram, the output voltage of 1.25V±1%. Based on standard CMOS bandgap voltage reference source, including core circuit, operational amplifier, and the design of the bias circuit. Under the 5 V power supply voltage, based on the SMIC 0.35μm CMOS 2P3M process, using the Spectre simulator was carried out on the bandgap voltage reference source circuit simulation, finally get the Power Supply Rejection Ratio (PSRR) is greater than 70dB, Temperature Coefficient (TC) is less than 10ppm/°C, benchmark output voltage of 1.25V±0.3%. Finally using Cadence Virtuoso design tool, design of circuit layout and through the validation.
1.2 第2章 2.1 2.2
论文主要工作和结构························································3 带隙基准基本原理··························································· 5 与电源无关的偏置···························································5 与温度无关的基准···························································5 2.2.1 2.2.2 负温度系数电压·················································· 6 正温度系数电压·················································· 7
IV
3.2.6 3.2.7 3.3 第4章 4.1
整体电路实现···················································· 23 仿真分析·························································· 25