M7 300-600
M7
B,Oct,2011
Typical Characterisitics
COLLECTOR CURRENT I (mA) C
Static Characteristic
-4
COMMON EMITTER T =25℃
a
-3 -2 -1 -0
-0 -200
-9uA -8.1uA -7.2uA
2.250
2.550
0.950 TYP.
1.800
2.000
0.550 REF.
0.300
0.500
0°
8°
Dimensions In Inches
Min.
Max.
0.035
0.045
0.000
0.004
0.035
0.041
0.012
0.020
0.003
0.006
0.110
0.118
0.047
0.055
Stamp “EMPTY” on the empty box
Seal the box with the tape
QA Label
Label on the Inner Box Inner Box: 210 mm× 208 mm×203 mm
Label on the Outer Box Outer Box: 440 mm× 440 mm× 230 mm
1000
2SA812
h —— FE
I
C
Ta=100 oC
Ta=25 oC
COMMON EMITTER V =-6V
CE
-10
-100
COLLECTOR CURRENT I (mA) C
V
—— I
BEsat
C
Ta=25℃
Ta=100℃
-10
COLLECTOR CURRENT I (mA) C
f —— I
【 南京南山半导体有限公司 — 长电贴片三极管选型资料】

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
2SA812 TRANSISTOR (PNP)
-6.3uA -5.4uA -4.5uA
-3.6uA -2.7uA
-1.8uA I =-0.9uA
B
-2
-4
-6
-8
COLLECTOR-EMITTER VOLTAGE V (V) CE
V
—— I
CEsat
C
-100
Ta=100℃
(mV)
DC CURRENT GAIN h FE
600 500 400 300 200 100
Value -60 -50 -5 -100 200 150
-55-150
Unit V V V mA
mW ℃ ℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance
50
0 0
COMMON EMITTER V =-6V
CE
T =25 oC a
-10
-100
COLLECTOR CURRENT I (mA) C
Pc —— Ta
25
50
75
100
125
AMBIENT TEMPERATURE Ta (℃)
150
B,Oct,2011
CAPACITANCE C (pF)
【 南京南山半导体有限公司 — 长电三极管选型资料】
FEATURES z Complementary to 2SC1623 z High DC Current Gain: hFE=200 TYP.(VCE=-6V,IC=-1mA) z High Voltage: Vceo=-50V
SOT-23
1. BASE 2. EMITTER 3. COLLECTOR

Symbol
A A1 A2 b c D E E1 e e1 L L1 θ
Dimensions In Millimeters
Min.
Max.
0.900
1.150
0.000

0.300
0.500
0.080
0.150
2.800
3.000
1.200
1.400
Min -60 -50 -5
90
-0.58
Typ
Max Unit
V
V
V
-0.1 μA
-0.1 μA
600
-0.3
V
-0.68 V
180
MHz
4.5
pF
CLASSIFICATION OF hFE Rank Range Marking
M4 90-180
M4
M5 135-270
M5
M6 200-400
M6
T
C
β=10
-100
(mV)
VOLTAGE V
COLLECTOR-EMITTER SATURATION
TRANSITION FREQUENCY f (MHz) T
COLLCETOR CURRENT I (mA) C
T =100℃
-10
a
T =25℃ a
-1 -400
20
10
-600
-800
BASE-EMMITER VOLTAGE V (mV) BE
0.089
0.100
0.037 TYP.
0.071
0.079
0.022 REF.
0.012
0.020
0°
8°
The bottom gasket
3000×15 PCS
Label on the Reel 3000×1 PCS
Seal the box with the tape
The top gasket
Symbol V(BR)CBO V(BR)CEO V(BR)EBO
ICBO IEBO hFE VCE(sat) VBE
fT
Cob
Test conditions
IC=-100μA, IE=0
IC= -1mA, IB=0
IE= -100μA, IC=0
VCB=- 60 V, IE=0 VEB= -5V, IC=0 VCE=- 6V, IC= -1mA IC=-100mA, IB= -10mA IC=-1mA, VCE=-6V VCE=-6V, IC= -10mA VCB=-10V,IE=0,f=1MHz
Unit : mm
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol VCBO VCEO VEBO IC PC TJ Tstg
Parameter Collector- Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature
C / C —— V / V
ob ib
CB EB
-1000
f=1MHz
I =0/ I =0
E
C
Ta=25 oC
C ib
C ob
1
-0.1
-1
-10
-20
REVERSE VOLTAGE V (V)
COLLECTOR POWER DISSIPATION Pc (mW)
100
10 -1
250
200
150
100
0 -1
-1000
-800
BEsat
VOLTAGE V
BASE-EMITTER SATURATION
CEsat
-10 -1
-100
Ta=25℃
β=10
-10
-100
COLLECTOR CURRENT I (mA) C
I —— V
C
BE
COMMON EMITTER V =-6V
CE
-600
-400 -1