【 南京南山半导体有限公司 — 长电贴片三极管选型资料】

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
2SA1036 TRANSISTOR (PNP)

Symbol
A A1 A2 b c D E E1 e e1 L L1 θ
Dimensions In Millimeters
Min.
Max.
0.900
1.150
0.000
0.100
0.900
1.050
0.300
0.500
0.080
0.150
2.800
3.000
1.200
1.400
Symbol VCBO VCEO VEBO IC PC TJ Tstg
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature
Symbol Test conditions
V(BR)CBO IC=-100μA,IE=0
V(BR)CEO IC=-1mA,IB=0
V(BR)EBO IE=-100μA,IC=0
ICBO
VCB=-20V,IE=0
IEBO
VEB=-4V,IC=0
hFE
VCE=-3V,IC=-10mA
VCE(sat) IC=-100mA,IB=-10mA
BEsat
h FE
—— I C
1000
Ta=100 oC
Ta=25 oC
100
COMMON EMITTER V =-3V
CE
10 -1
-10
-100
-500
COLLECTOR CURRENT I (mA) C
-1200
ห้องสมุดไป่ตู้β=10
V BEsat
—— I C
-1000
-800
Ta=25℃
-600
Ta=100℃
R
180 - 390
B,Aug,2012
Typical Characteristics
2SA1036
COLLECTOR CURRENT I (mA) C
(mV)
CEsat
VOLTAGE V
COLLECTOR-EMITTER SATURATION
Static Characteristic
-15
COMMON EMITTER T =25℃
TRANSITION FREQUENCY f (MHz) T
-1 -200
-400
-600
-800
BASE-EMMITER VOLTAGE V (mV) BE
f T
——
I
C
1000
COMMON EMITTER V =-5V
CE
T =25 oC a
-1000
100
10 -1
-10
-20
COLLECTOR CURRENT I (mA) C
Stamp “EMPTY” on the empty box
Seal the box with the tape
QA Label
Label on the Inner Box Inner Box: 210 mm× 208 mm×203 mm
Label on the Outer Box Outer Box: 440 mm× 440 mm× 230 mm
a
-12
-50uA -45uA
-40uA
-9
-35uA
-30uA
-6
-25uA
-20uA
-15uA
-3
-10uA
I =-5uA
B
-0
-0
-1
-2
-3
-4
COLLECTOR-EMITTER VOLTAGE V (V) CE
-1000
β=10
V CEsat
——
I
C
-100
Ta=100℃
-10
Ta=25℃
-1
-1
-10
-100
-500
COLLECTOR CURRENT I (mA) C
-500
COMMON EMITTER
V =-3V CE
I —— V
C
BE
-100
T =100℃ a
T =25℃ a
-10
BASE-EMITTER SATURATION
VOLTAGE V
(mV)
DC CURRENT GAIN h FE
SOT-23
3
FEATURES ∙ Large IC. ICMax.= -500 mA ∙ Low VCE(sat). Ideal for low-voltage operation.
MARKING : HP, HQ, HR
1 2
1. BASE 2. EMITTER 3. COLLECTOR
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
COLLECTOR POWER DISSIPATION Pc (mW)
1 -0.1
250
-1
REVERSE VOLTAGE V (V)
Pc —— Ta
-10
-20
200
150
100
50
0
0
25
50
75
100
125
150
AMBIENT TEMPERATURE Ta (℃)
B,Aug,2012
【 南京南山半导体有限公司 — 长电三极管选型资料】
0.089
0.100
0.037 TYP.
0.071
0.079
0.022 REF.
0.012
0.020
0°
8°
The bottom gasket
3000×15 PCS
Label on the Reel 3000×1 PCS
Seal the box with the tape
The top gasket
2.250
2.550
0.950 TYP.
1.800
2.000
0.550 REF.
0.300
0.500
0°
8°
Dimensions In Inches
Min.
Max.
0.035
0.045
0.000
0.004
0.035
0.041
0.012
0.020
0.003
0.006
0.110
0.118
0.047
0.055
fT
VCE=-5V,IC=-20mA,f=100MHz
Cob
VCB=-10V,IE=0,f=1MHz
Min Typ Max Unit
-40
V
-32
V
-5
V
-1
μA
-1
μA
82
390
-0.4
V
200
MHz
7
pF
CLASSIFICATION OF hFE
Rank Range
P
82 - 180
Q
120 - 270
-400
-200 -1
100
10
-10
-100
COLLECTOR CURRENT I (mA) C
C /C ob ib
——
V /V CB EB
C ib
-500
f=1MHz
I =0/ I =0
E
C
Ta=25 oC
C ob
CAPACITANCE C (pF)
COLLCETOR CURRENT I (mA) C
Value -40 -32 -5 -500 200 150
-55-150
Unit V V V mA
mW ℃ ℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance