Dimensions In Inches Min. Max. 0.028 0.035 0.000 0.004 0.028 0.031 0.006 0.010 0.010 0.014 0.004 0.008 0.059 0.067 0.028 0.035 0.057 0.069 0.020 TYP. 0.035 0.043 0.016 REF. 0.010 0.018 0° 8°
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) Test conditions IC=10μA, IE=0 IC=1mA, IB=0 IE=10μA, IC=0 VCB=15 V, IE=0 VEB=6V, IC=0 VCE=2V, IC=10mA IC=200mA,IB=10mA VCE=2V,IC=10mA, f=100MHz VCB=10V,IE=0,f=1MHz 320 7.5 270 Min 15 12 6 0.1 0.1 680 0.25 V MHz pF Typ Max Unit V V V
COLLECTOR CURRENT
IC
(mA)
Cob/Cib
30
——
VCB/VEB
f=1MHz IE=0/IC=0 Ta=25 ℃
0.16
PC ——
Ta
(pF)
Cib
10
COLLECTOR POWER DISSIPATION PC (W)
0.14
0.12
0.10
CAPACITANCE
C
Cob
0.08
1. BASE 2. EMITTER 3. COLLECTOR
FEATURES High current. Low VCE(sat). VCE(sat)≤250mV at IC = 200mA / IB = 10mA MARKING: BX
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
hFE
Ta=100℃ Ta=25℃
——
IC
(mA)
90uA 80uA 70uA 60uA 50uA 40uA 30uA
500
IC
COLLECTOR CURRENT
DC CURRENT GAIN
100
20uA IB=10uA
10
COMMON EMITTER VCE=2V 3
10 100 500
COLLECTOR-EMITTER VOLTAGE
T= a 25 ℃ T= a 10 0
(mA)
400
300
COLLECTOR CURRENT
200
10
COMMON EMITTER VCE=2V
1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
COMMON EMITTER VCE=2V Ta=25℃
100 5 10 70
BASE-EMMITER VOLTAGE VBE (V)
【 南京南山半导体有限公司 — 长电贴片三极管选型资料】

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-523 Plastic-Encapsulate Transistors
SOT-523
2SC5585
TRANSISTOR (NPN)
Dimensions In Millimeters Min. Max. 0.700 0.900 0.000 0.100 0.700 0.800 0.150 0.250 0.250 0.350 0.100 0.200 1.500 1.700 0.700 0.900 1.450 1.750 0.500 TYP. 0.900 1.100 0.400 REF. 0.260 0.460 0° 8°
μA μA
fT
Cob
A,May,2011
【 南京南山半导体有限公司 — 长电贴片三极管选型资料】

Typical Characteristics
45 40 35 30 25 20 15 10 5 0 0 2 4 6 8 10 12
2SC5585
1000
VCE
——
IC
100uA COMMON EMITTER Ta=25℃ hFE
100
0℃ 10 T=
a
5℃ =2 Ta
β=20
10 1 10 100 500 0.1 1 10 100
β=20
500
COLLECTOR CURRENT
IC
(mA)
COLLECTOR CURRENT
IC
(mA)
IC
500
——
VBE
500
fT
——
IC
IC
100
fT
℃
(MHz) TRANSITION FREQUENCY
QA Label
Label on the Inner Box Inner Box: 210 mm× 208 mm× 203 mm
Label on the Outer Box Outer Box: 440 mm× 长电贴片三极管选型资料】

【 南京南山半导体有限公司 — 长电贴片三极管选型资料】

【 南京南山半导体有限公司 — 长电贴片三极管选型资料】

【 南京南山半导体有限公司 — 长电贴片三极管选型资料】
Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector- Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value 15 12 6 0.5 0.15 150 -55-150 Unit V V V A W ℃ ℃
0.06
0.04
0.02
1 0.1
0.00
REVERSE VOLTAGE
1
V
(V)
10
20
0
25
50
75
100
125
150
AMBIENT TEMPERATURE
Ta
(℃ )
A,May,2011
【 南京南山半导体有限公司 — 长电贴片三极管选型资料】

Symbol A A1 A2 b1 b2 c D E E1 e e1 L L1 θ

The bottom gasket
Label on the Reel 3000×15 PCS 3000×1 PCS
The top gasket Stamp “EMPTY” on the empty box Seal the box with the tape
Seal the box with the tape
VCE (V)
COLLECTOR CURRENT
IC
(mA)
VCEsat
500
——
IC
2
VBEsat ——
IC
COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV)
BASE-EMITTER SATURATION VOLTAGE VBEsat (V)
1
Ta=25 ℃ Ta=100 ℃