Back Surface反面
SSP单面:Fine ground精研磨, Ra 0.4 to 1.0 um;DSP双面:Polished抛光
Edge condition边
Edge defects not to exceed SEMI M3-91,符合SEMI M3-91
TTV厚度变化
<15um
<10um
<10um
BOW挠度
<15um
<10um
<10um
Warp弯曲
<15um
<10um
<10um
Bubble & Color微气孔及色泽
None by visuபைடு நூலகம்l inspection in intensive light强光灯下不可见
Ground Boundary晶界
None by visual inspection in fluorescent light日光灯下不可见
Diameter直径
50.8mm ± 0.1mm / 76.2mm ± 0.25mm / 100.0 ± 0.40mm / 125.0 ± 0.3mm / 150.0 ± 0.3mm
Thickness厚度
330um ± 15um
430um ± 10um
650um ± 10um
Major Flat定位边
Cleanliness清洗
Free visible contamination无见任何可见杂物
Packaging包装
Packaged in a class 100 clean room environment, in cassettes of 25pcs or singlefluroware, under a nitrogen atmosphere. 100级洁净室真空冲氮包装,25片卡盒/单片币式
Crystal Materials晶体材料
99.995% High Purity, 2-3 GradeMonocrystallineAl2O3,高纯单晶
Wafer Surface Orientation晶向
C-axis(0001) offset to M (1-100) / A (11-20) 0.2°±0.05° / 0.3°±0.1° / ±0.25°
A-axis (1 1-2 0) ± 0.2°方向
Major Flat Length
16.0mm ± 1.0mm / 22.0mm ± 1.0mm / 32.5 ± 1.0mm / 47.5 ± 2.5mm长度
Minor次定位边
None无
Front Surface Finish正面状态
Epi-ready polished外延生长级抛光, Ra< 0.2nm
Note备注
R-plane (1-1 0 2), A-plane (1 1-20 ), and M-plane(1-1 00) are available; Customer's specification not listed above is also available upon request.同时我们生产R-面,A-面和M-面蓝宝石基片;我们接受客户的特殊规格的定货