1 编号： 河南大学2010届本科毕业论文 光刻技术研究 论文作者姓名： 张永攀 作 者 学 号：1023009650 所 在 学 院：物理院 所 学 专 业：电子信息科学与技术 导 师 姓 名：谷城 导 师 职 称：讲师 2014 年 4 月 25 日 2

光刻技术研究

摘要

光刻技术是集成电路制造中至关重要的一环，同时光刻技术的发展速度也在一定程度上决定了集成电路更新换代的周期，因此对光刻技术的研究对于集成电路的发展进程就显得尤为关键。本文首先讲述了光刻技术的含义以及它在集成电路制造工艺中的作用和地位，给读者一个直观的感受，然后具体介绍了光刻技术主要用到的设备和材料并且一一阐释了光刻的每个步骤，并结合每个步骤探讨未来可能会出现改进的地方，最后从理论和可实现性两方面结合自己的理解预测未来光刻技术的走向，试着找到最有可能实现大规模生产的新的工艺技术。

关键词：光刻技术，重要作用，流程，发展方向 3

Abstract Lithography is a vital part of the integrated circuit , at the same time, the speed of the development of lithography technology determines the integrated circuit upgrade cycle to a certain extent, so studying lithography process is particularly critical in the development of integrated circuit. First, this article tells us the definition of lithography and its role and status in the integrated circuit process to give the readers an intuitive feeling, then it introduced equipment and materials of lithography in detail and illustrates the each step of lithography, then combined with the steps to explore where it can be improved. Finally, from the two aspects of theory and reality it predicts the future lithography combined with own understanding, and try to find the new technology which most likely to achieve mass production.

Keywords: Lithography, important role, process, direction 4

1、绪论 ............................................................................................................. 6 1.1集成电路 ............................................................................................... 6 1.2光刻 ...................................................................................................... 7 2、光刻技术的实现 ............................................................................................. 8 2.1光刻所需的设备和材料 ............................................................................ 8 2.1.1 硅............................................................................................... 8 2.1.2光刻机 ......................................................................................... 9 2.2光刻技术的操作流程 ............................................................................. 11 2.2.1硅片清洗烘干 ............................................................................. 11 2.2.2涂底 .......................................................................................... 11 2.2.3旋转涂胶.................................................................................... 11 2.2.4软烘 .......................................................................................... 11 2.2.5边缘光刻胶的去除 ...................................................................... 11 2.2.6对准 .......................................................................................... 11 2.2.7曝光 .......................................................................................... 11 2.2.8后烘 .......................................................................................... 12 2.2.9显影 .......................................................................................... 12 2.2.10硬烘 ........................................................................................ 13 3、光刻技术的具体应用（以N阱CMOS工艺为例） ............................................... 13 3.1 N阱制作 ............................................................................................. 13 3.1.1.在p衬底上进行n阱注入 ............................................................ 13 3.1.2.曝光 ......................................................................................... 14 3.1.3,n阱注入.................................................................................... 15 3.2.有源区的形成 ...................................................................................... 15 3.3,生成多晶栅 ......................................................................................... 16 4、光刻技术面临的挑战 .................................................................................... 21 4.1 光学光刻的物理极限 ............................................................................ 21 4.1.1降低工艺因子K1 ......................................................................... 21 4.1.2 提高数值孔径 ............................................................................ 21