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HIPIMS,HIPIMS+ 大功率脉冲磁控溅射
Mizuho Corporate Bank BIC: MHCBDEDD • IBAN DE10300207003114133003
Technology for yFoourtis Bank N.V. BIC:FTSBNL2R • IBAN:NLBFTSB064 01 04 576 • Registration KvK Venlo no. 12021235 – VAT no. NL8091.91.428B01
➢ To increase deposition rate of sputtering process
Mizuho Corporate Bank BIC: MHCBDEDD • IBAN DE10300207003114133003
Technology for yFoourtis Bank N.V. BIC:FTSBNL2R • IBAN:NLBFTSB064 01 04 576 • Registration KvK Venlo no. 12021235 – VAT no. NL8091.91.428B01
Technology for yFoourtis Bank N.V. BIC:FTSBNL2R • IBAN:NLBFTSB064 01 04 576 • Registration KvK Venlo no. 12021235 – VAT no. NL8091.91.428B01
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Deliveries are in accordance with the general conditions, of which we will send you a copy at your request.
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Deliveries are in accordance with the general conditions, of which we will send you a copy at your request.
Overview Presentation Hipims+ by Hauzer ➢ Why High Power sputter technology ➢ Hipims vs. Hipims+ ➢ Coatings: TiAlN, Cr2N ➢ Machine integration in Flexicoat®
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Deliveries are in accordance with the general conditions, of which we will send you a copy at your request.
Concept behind HIPIMS Technology
➢ Capacitor discharge ➢ Peak pulse powers from kW to MW ➢ Low frequency (duty cycle) ➢ Pulse energy and voltage can be defined
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Deliveries are in accordance with the general conditions, of which we will send you a copy at your request.
Why High power pulse sputtering?
Plasma technology with high % of the material to be deposited is ionized. Gaining control over stress - > Control microstructure/texture
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Deliveries are in accordance with the general conditions, of which we will send you a copy at your request.
Results - Roughness AFM 30x30µm
A70 Arc -70V bias
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Deliveries are in accordance with the general conditions, of which we will send you a copy at your request.
HIPIMS TiAlN Experiment
Sample # Etching
Deposition source configuration
➢ To create defect free coatings with good adhesion.
➢ To make coatings for tool and tribo applications which outperform arc deposited coatings
➢ To reduce thermal load of substrate
Results - Morphology AFM 2x2µm
Ion energy
2D1H75V HIPIMS -75V
2D1H95 HIPIMS -95V
Increase in ion energy (higher bias) with constant ion flux leads
to densification of coating
Mizuho Corporate Bank BIC: MHCBDEDD • IBAN DE10300207003114133003
Technology for yFoourtis Bank N.V. BIC:FTSBNL2R • IBAN:NLBFTSB064 01 04 576 • Registration KvK Venlo no. 12021235 – VAT no. NL8091.91.428B01
2D1H75 HIPIMS -75V bias
2D1H95 HIPIMS -95V bias
Significant improvement in surface roughness
Mizuho Corporate Bank BIC: MHCBDEDD • IBAN DE10300207003114133003
Technology for yFoourtis Bank N.V. BIC:FTSBNL2R • IBAN:NLBFTSB064 01 04 576 • Registration KvK Venlo no. 12021235 – VAT no. NL8091.91.428B01
7
Deliveries are in accordance with the general conditions, of which we will send you a copy at your request.
Technology for yFoourtis Bank N.V. BIC:FTSBNL2R • IBAN:NLBFTSB064 01 04 576 • Registration KvK Venlo no. 12021235 – VAT no. NL8091.91.428B01
9
Deliveries are in accordance with the general conditions, of which we will send you a copy at your request.
Technology for yFoourtis Bank N.V. BIC:FTSBNL2R • IBAN:NLBFTSB064 01 04 576 • Registration KvK Venlo no. 12021235 – VAT no. NL8091.91.428B01
8
Deliveries are in accordance with the general conditions, of which we will send you a copy at your request.
Results - Roughness Roughness data
Ra
Ra/um
0,3 0,25
0,2 0,15
0,1 0,05
0
A40
A70
2D1H75
Sample
1D2H75
Mizuho Corporate Bank BIC: MHCBDEDD • IBAN DE10300207003114133003
1600 1400 1200
➢ Magnetron design
-1000
1000
800
600
-1500
400
200
-2000
0
-50 0 50 100 150 200
Time /µs
Mizuho Corporate Bank BIC: MHCBDEDD • IBAN DE10300207003114133003
Experiment overview
Sample
: polished M2 HSS
Target Dep. Temp.
: 50/50 at% AlTi : 450-520oC
Film thickness : 2-3µm
Full load in chamber, Three fold rotation
Columns coalesce to reduce number of boundaries
Resputtering of film evident at growing surface
Mizuho Corporate Bank BIC: MHCBDEDD • IBAN DE10300207003114133003
Discharge Voltage /V Discharge Current /A
➢ Pulse shape is determined by system configuration