Metal Etch Resist Compatibility (Galvanic Cell Reaction) 金屬阻劑的匹配性 (電池反應)
plexity Made Simpler…
/pcm
ET15
l DuPont iTechnologies
plexity Made Simpler…
ET6
/pcm
l DuPont iTechnologies
Primary Imaging Seminar
Oscillating Spray Mechanism (噴灑擺動機構)
INTERLOCKING SINUSOIDAL CURVES OF OSCILLATING SPRAY MECHANISM
5.0
4.5 Y= - 0.2892x2 + 3.2956x + 32.084
4.0 19 IPM Etch Speed (0.483 m/min)
3.5
3.0
A
B
C
D
E
F
G
H
I
J
COLUMN LABEL
plexity Made Simpler…
/pcm
ET19
l DuPont iTechnologies
Primary Imaging Seminar
Cupric Chloride Etchant 氯化銅蝕刻液
Chemistry 化學反應 Critical Variable 重要變數 Process Controls 製程控製 Productivity and Fine Line Variable 產量和細線路的變數 Performance Ratings 性能等級
l DuPont iTechnologies
Primary Imaging Seminar
Etching 蝕刻
plexity Made Simpler…
ET1
/pcm
l DuPont iTechnologies
Primary Imaging Seminar
plexity Made Simpler…
/pcm
ET20
l DuPont iTechnologies
Primary Imaging Seminar
Cupric Chloride Basic Chemistry 氯化銅基本化學反應
Cu0 + Cu2 + → 2 Cu+ Cu+ is complexed as CuCl3 2-
/pcm
ET17
l DuPont iTechnologies
Primary Imaging Seminar
Acid Etch – Etch Factor vs. Overetch 酸性蝕刻 – 蝕刻因子與過度蝕刻
ETCH FACTOR
ETCH FACTOR vs. OVERETCH AMOUNT
ET8
l DuPont iTechnologies
Primary Imaging Seminar
Etching Uniformity: Transverse Direction 蝕刻不均勻: 橫方向
PANEL TOP SIDE (B) MD LINES
70 y= - 0.0283x2 + 1.0341x + 62.743
板子後端 6.5
6.0
PANEL TOP SIDE (B) MD LINES
Y= - 0.214x2 + 2.4107x + 61.655 27 IPM Etch Speed (0.686 m/min)
板子前端
CONDUCTOR WIDTH, MICRONS
5.5 DIRECTION PANEL TRAVELED IN ETCHER
Dielectric
plexity Made Simpler…
/pcm
ET13
l DuPont iTechnologies
Primary Imaging Seminar
Etch Factor – Definition (蝕刻因子定義)
CONDUCTOR CROSS-SECTION
Acid Etch – Etch Factor vs. Speed 酸性蝕刻 – 蝕刻因子與速度
ETCH FACTOR
ETCH FACTOR vs. CONVEYOR SPEED
10
9
8
7 6
5
4
3
2
1
0
15
20
25
30
35
40
45
50
CONVEYOR SPEED, inches/minute
plexity Made Simpler…
Etch Speed 蝕刻速度
Resist Compatibility 乾膜匹配性
System Control and Stability 系統的控制及穩定性
Environmental 環境
Cost 成本
plexity Made Simpler…
/pcm
ET9
/pcm
l DuPont iTechnologies Etcher Uniformity: 3-D
Primary Imaging Seminar
蝕刻均勻性:立體圖
CONDUCTOR WIDTHM, um
PANEL TOP SIDE
70 60 50 40 30 20 10
10
9
8
7
6
5
4
3
2
1
0
0
5
10 15 20 25
30 35
40 45
OVERETCH AMOUNT, microns
plexity Made Simpler…
/pcm
ET18
l DuPont iTechnologies
Primary Imaging Seminar
plexity Made Simpler…
ET5
/pcm
l DuPont iTechnologies
Primary Imaging Seminar
Critical Variables 重要變數
Chemical Concentration 化學液濃度 Temperature 溫度 Spray Pressure and Pattern 噴灑壓力和圖樣 Conveyor Rate 傳動速率
Galvanic Cell Reaction 電池反應
Also Called Electrochemical Etch 亦稱電化學蝕刻
Au > Ni > Sn > Sn/Pb
(worst)
(best)
plexity Made Simpler…
/pcm
Primary Imaging Seminar
Etching Methods 蝕刻方法
Spray Etching Equipment 噴灑蝕刻液設備
Critical Variables 重要之變數
Etchant Performance and Selection Criteria 蝕刻設備的性能及選擇要件
Etched Conductors 蝕刻後線路
50 um (2 mil) L/S ½-oz. Copper
plexity Made Simpler…
ET2
/pcm
l DuPont iTechnologies
Primary Imaging Seminar
t X
ETCH FACTOR =t/X
plexity Made Simpler…
/pcm
ET14
l DuPont iTechnologies
Primary Imaging Seminar
Minimizing Undercut 降低側蝕量
Chemically 化學 Process Variables 製程變數 Artwork Compensation 底片補償值 Thinner Copper 薄銅
plexity Made Simpler…
ET7
/pcm
l DuPont iTechnologies
Primary Imaging Seminar
Etching Uniformity: Machine Direction
蝕刻均勻度: 機械方向
7.0
After Resist Development 乾膜顯影後
plexity Made Simpler…Fra bibliotekET3
/pcm
l DuPont iTechnologies
Primary Imaging Seminar
Typical Etchants 典型的蝕刻液
65 27 IPM Etch Speed (0.686 m/min)
60
CONDUCTOR WIDTH, micron
55 50
45
Y= 0.0034x2 + 0.6428x + 36.133
40
19 IPM Etch Speed
35
(0.483 m/min)
30
1
2
3
4
5
6
7
8
ROW LABEL
plexity Made Simpler…
Primary Imaging Seminar
Acid Etch - Line Width vs. Conveyor Speed
酸性蝕刻 - 線寬與傳動速度
2-SIDE AVERAGE WIDTH (OPTICAL)
乾膜線寬75um
80
CONDUCTOR WIDTH, microns