2.1 沟道层薄膜材料 — a-InGaZnO
APPLIED PHYSICS LETTERS 95, 013503 2009
a-IGZO:dc sputtering; SiNx:PECVD; 6.5 in. flexible full-color top-emission AMOLED on PI field-effect mobility of 15.1 cm2 /V s subthreshold slope of 0.25 V/dec, threshold voltage VTH of 0.9 V. high degree of spatial uniformity. withstood bending down to R=3 mm under tension and compression without any performance degradation.
2.1 沟道层薄膜材料 — ZnO
Appl. Phys. Lett., Vol. 82(5), 733-735, 2003
ATO (Al–Ti-O): ALD; ZnO: ion beam sputtering and a rapid thermal anneal (RTA) at 600–800 ℃ in O2 on-to-off ratio of 107; Threshold voltages: 10 to 20 V; Mobilities: 0.3 to 2.5 cm2/V s, One attractive application for transparent TFTs involves their use as selecttransistors in each pixel of an active-matrix liquid-crystal display.
3.
氧化物TFT在平板显示领域的应用
2.氧化物薄膜晶体管的研究进展

沟道层薄膜

In-Ga-Zn-O ZnO In-Zn-Sn-O Sn–Ga–Zn–O In-Zn-O Zn-Sn-O Ti-O
Active Layer

介质层薄膜
SiNx, SiOx, Al2O3,
HfO2, Y2O3, Ta2O5,

制备工艺，影响因素及机制
2.1 沟道层薄膜材料 — InGaO3(ZnO)5
Science, 300(23), 1269 (2003)

InGaZnO/YSZ: PLD at RT, 1400℃ for 30 min. Single-crystalline

mobility 80 cm2/Vs
新型氧化物薄膜晶体管的研究进展
报告内容
1.
TOEO-6会议介绍
1.1 TOEO-6会议内容和分类
1.2 与TOEO-6会议同期举办的展览会
2.
氧化物薄膜晶体管的研究进展
2.1 沟道层薄膜材料
2.2 栅介质层薄膜材料 2.3 电学稳定性
3.
氧化物TFT在平板显示领域的应用
1. TOEO-6会议介绍
1.1 TOEO-6会议内容和分类

Devices and Applications





Thin film transistor (TFT) Optoelectronic devices using TCOs and TOSs Flat-panel display (FPD), OLED, electronic paper, etc Solar cells (thin films, compounds, quantum dot, etc) Transparent optoelectronic devices FET, UV-LED, FED, Sensor, etc Other topics related to FPDs, photocatalysists, etc
ZnO:N 激光分子束外延 on/off ratio of 104 The threshold voltage is 5.15V The channel mobility on the order of 2.66 cm2 V−1 s−1
2.1 沟道层薄膜材料 — IZTO
J. Mater. Chem., 2009, 19, 3135–3137
1.1 TOEO-6会议内容和分类

日本东京工业大学Hosono教授领衔的日本战略性创新研究 促进事业(ERATO)项目“细野透明电子活性项目(19992004)”，致力于新型功能氧化物材料尤其是新型TCO薄膜和 TOS薄膜及其器件的研究和开发，并且取得了很多成果
因此， Hosono教授获得了ERATO的2004-2009第二个五年 计划的立项与资助，题目为“基于透明氧化物的纳米结构的 功能开发与应用开展” 连续对同一人的相近课题进行资助，这在ERATO项目资助 史上是少有的现象 德国Fraunhofer研究机构与会学者表示，他们已经整合力量 ，开展TCO/TOS/器件及其应用领域，特别是太阳能电池领 域的研究
日本最大，250家公司出展
时间：April 15-17, 2009 地点：Tokyo Fashion Town (TFT) Building
报告内容
1.
TOEO-6会议介绍
1.1 TOEO-6会议主题
1.2 与TOEO-6会议同期举办的展览会
2.
氧化物薄膜晶体管的研究进展
2.1 沟道层薄膜材料
2.2 栅介质层薄膜材料 2.3 电学稳定性
并显示最佳性能：
场效应迁移率 5.1 cm2/V s 开关比1.2 × 107
阈值电压 20 V
结论：ZnO薄膜表面形貌对 ZnO-TFTs具
有显著影响
2.1 沟道层薄膜材料 — ZnO
2.1 沟道层薄膜材料 — ZnO:N
Thin Solid Films 516 (2008) 3305–3308---河南大学张新安老师
2.1 沟道层薄膜材料 — IZO
Thin Solid Films 516 (2008) 5894–5898
IZO (10 wt.% ZnO) at RT SiOx: PECVD at 280 ℃ operate in depletion mode threshold voltage of −5 V mobility of 15 cm2/V s on-off ratio of 106
2.1 沟道层薄膜材料 — IZO
IZO: dc sputtering
Intensity (a.u.)
10
SiO2: PPD μ = 5.2 cm2V-1s-1 Vth = 0.94 V
Ron/off = ~104
1E-4
20
30
40
50
60
70
80
2(degrees)
(b)
0.008 0.007 0.006
Vth = 2 V mobility ~ 30 cm2 V−1 s−1 R on/off > 106
2.1 沟道层薄膜材料 — Sn–Ga–Zn–O
phys. stat. sol. (a) 205(8), 1920–1924, 2008
a-SGZO on a-SiO2/n+-Si wafers the device performances of the as-deposited channel TFTs were very poor Ion <10–7 A；Ron/off <101 The TFTs using channels annealed at 500 °C showed good performances such as Ion > 10–5 A, R on/off > 106 and μsat ~ 1.8 cm2 V–1 s–1.
2.1 沟道层薄膜材料 — ZnO
Solid State Communications 146 (2008) 387–390---上海大学
张志林老师
随着ZnO沟道层厚度从15 nm增加到70 nm
漏电流从10−10 增加到 10−8 A 开关比从1.2 × 107 下降到 2 × 104 ZnO薄膜的表面形貌先显著改善后劣化 25 nm厚ZnO薄膜具有最平整的表面形貌，
2.1 沟道层薄膜材料 — a-InGaZnO
APPLIED PHYSICS LETTERS 94, 072103 2009
a-InGaZnO4：on cellulose paper by sputtering at RT threshold voltage：3.75 V saturation mobility 35 cm2 V−1 s−1 subthreshold gate-voltage swing 2.4 V decade−1 on-to-off ratio of 104 The results verify that simple cellulose paper is a good gate dielectric as well as a low-cost substrate for flexible electronic devices such as paper-based displays.→粗糙表面上获得高性能TFT
Nature, 432(25), 488 (2004)


InGaZnO/PET: PLD at RT amorphous mobility 10 cm2/Vs
2.1 沟道层薄膜材料 — a-InGaZnO

共价非晶半导体(如a-Si:H): CBM和VBM由sp3杂化轨道构成 氧化物半导体电子输运通道(CBM)由金属S轨道的球面扩散所构成
1.1 TOEO-6会议内容和分类